A sensor comprising a light emitter and light detector directly covered and encapsulated by a layer of light transmissive compound. A gap in the light transmissive compound between the light emitter and the light detector filled with an infrared ink. In some embodiments, an infrared ink can cover at least a portion of a top surface of the sensor and define apertures above the light detector and/or light emitter.

A metal-insulator-metal (MIM) high-sensitivity plasmon polariton (SPP) terahertz wave detector includes a rectangular cavity, an absorption cavity, a silver block, two waveguides, three metal films, a terahertz probe light, a signal light, and an opto-electric detector; the terahertz probe light is located at an upper end of the rectangular cavity; the rectangular cavity is located at an input end of the terahertz probe wave; and the absorption cavity is connected with a first waveguide; the silver block is disposed within the first waveguide, and is movable; and the first waveguide is connected with a second waveguide.

An integrated circuit that includes a substrate, a photodiode, and a Fresnel structure. The photodiode is formed on the substrate, and it has a p-n junction. The Fresnel structure is formed above the photodiode, and it defines a focal zone that is positioned within a proximity of the p-n junction. In one aspect, the Fresnel structure may include a trench pattern that functions as a diffraction means for redirecting and concentrating incident photons to the focal zone. In another aspect, the Fresnel structure may include a wiring pattern that functions as a diffraction means for redirecting and concentrating incident photons to the focal zone. In yet another aspect, the Fresnel structure may include a transparent dielectric pattern that functions as a refractive means for redirecting and concentrating incident photons to the focal zone.

A photosensitive transistor or voltage-mode device which comprises a gate electrode, a layer of ambipolar two-dimensional material such as graphene and a layer of photoactive semiconducting material forms a junction with the ambipolar two-dimensional material. The photoactive semiconducting material and the ambipolar two-dimensional material are configured so that there is a non-screening gate voltage interval where an interface voltage at the junction between the photoactive semiconducting layer and the ambipolar two-dimensional material can be changed by applying to the gate electrode a gate voltage which falls within the non-screening gate voltage interval. The non-screening gate voltage interval comprises a flat-band gate voltage at which the interface voltage is zero. An electrical shutter can be operated at this gate voltage.

A display module and a method for monitoring backlight brightness are provided in the present disclosure. The display module includes a display region including an opening region and a non-opening region. The display module includes a backlight module and an array substrate. The array substrate is at a light-exiting side of the backlight module. The array substrate includes a plurality of gate lines which extends along a first direction and is arranged along a second direction, and further includes a plurality of data signal lines which is arranged along the first direction and extends along the second direction. The array substrate further includes a first substrate and at least one photosensitive unit, where the photosensitive unit is at a side of the first substrate away from the backlight module; and the photosensitive unit is disposed at the non-opening region for sensing a luminous brightness of the backlight module.

A waveguide filter sensing unit is provided. The waveguide sensing unit includes an input waveguide for receiving an optical signal and an interference waveguide region for filtering the optical signal to remove noise therein. The waveguide sensing unit further includes a cladding layer wrapping around the input waveguide and the interference waveguide region; and an optical signal detector converting the filtered optical signal into an electrical signal. The width of the input waveguide is smaller than that of the interference waveguide region, and the refractive index of the cladding layer is smaller than that of the input waveguide and the interference waveguide region.

An optical module with enhanced heat-dissipating properties and a method for manufacturing the optical module discloses an optical module which includes a substrate, a printed circuit, a component mounting block, an active device, and a lens. The printed circuit is formed on the substrate. The component mounting block is provided on the substrate, and the component mounting block has a recess. The active device, including a laser or a photodetector, is disposed in the recess. The lens is disposed on the active device.

An optical module with enhanced heat-dissipating properties and a method for manufacturing the optical module discloses an optical module which includes a substrate, a printed circuit, a component mounting block, an active device, and a lens. The printed circuit is formed on the substrate. The component mounting block is provided on the substrate, and the component mounting block has a recess. The active device, including a laser or a photodetector, is disposed in the recess. The lens is disposed on the active device.

Manufacturing opto-electronic modules (1) includes providing a substrate wafer (PW) on which detecting members (D) are arranged; providing a spacer wafer (SW); providing an optics wafer (OW), the optics wafer comprising transparent portions (t) transparent for light generally detectable by the detecting members and at least one blocking portion (b) for substantially attenuating or blocking incident light generally detectable by the detecting members; and preparing a wafer stack (2) in which the spacer wafer (SW) is arranged between the substrate wafer (PW) and the optics wafer (OW) such that the detecting members (D) are arranged between the substrate wafer and the optics wafer. Emission members (E) for emitting light generally detectable by the detecting members (D) can be arranged on the substrate wafer (PW). Single modules (1) can be obtained by separating the wafer stack (2) into separate modules.

A photovoltaic module comprises at least one photovoltaic cell and one concentration optic device, to be illuminated by a light flux emitting at at least one illumination wavelength belonging to a band of wavelengths defined by a minimum wavelength and a maximum wavelength, the band of wavelengths being that of the solar radiation of the order of [380 nm-1600 nm]. The concentration optic device is a monolithic component and comprises at least one diffractive structure comprising subwavelength patterns, defined in a structured material; the patterns having at least one dimension less than or equal to the average illumination wavelength divided by the refractive index of the structured material; the patterns being separated from one another by subwavelength distances, defined between centres of adjacent patterns; the concentration optic device ensuring at least one focusing function and one diffraction function. A solar panel comprising the photovoltaic module is also provided.