An infrared detector and an infrared sensor including the infrared detector are provided. The infrared detector includes a plurality of quantum dots spaced apart from each other and including a first component, a first semiconductor layer covering the plurality of quantum dots, and a second semiconductor layer covering the first semiconductor layer.

A lighting unit (10) for estimating an amount of daylight in a lighting environment includes: a light source (12); a filter (330) configured to block incident light in a first wavelength range, the incident light comprising both daylight and non-daylight incident light; a camera (32) configured to receive the filtered incident light and generate a detection signal (342), the filtered incident light being outside the first wavelength range; and a controller (22) in communication with the camera and configured to process the detection signal to estimate the amount of daylight incident light.

Methods, systems, and apparatus, for a stray-light testing station. In one aspect, the stray-light testing station includes an illumination assembly including a spatially extended light source and one or more optical elements arranged to direct a beam of light from the spatially extended light source along an optical path to an optical receiver assembly including a lens receptacle configured to receive a lens module and position the lens module in the optical path downstream from the parabolic mirror so that the lens module focuses the beam of light from the spatially extended light source to an image plane, and a moveable frame supporting the optical receiver assembly including one or more adjustable alignment stages to position the optical receiver assembly relative to the illumination assembly such that the optical path of the illumination assembly is within a field of view of the optical receiver assembly.

An infrared detector and an infrared sensor including the infrared detector are provided. The infrared detector includes a plurality of quantum dots spaced apart from each other and including a first component, a first semiconductor layer covering the plurality of quantum dots, and a second semiconductor layer covering the first semiconductor layer.

Disclosed is a single photon detector comprising a semiconductor substrate and a 2D material layer provided adjacent to the semiconductor substrate, the semiconductor substrate includes a first well having a first conductivity type, a heavily doped region having a second conductivity type different from the first conductivity type, and a depletion region provided between the first well and the heavily doped region.

An ultraviolet-ray (UV) sensor is disclosed. In one embodiment, the UV sensor includes a piezoelectric material, a sensing film arranged on the piezoelectric material and senses ultraviolet rays, an elastic wave input unit arranged on one end of the sensing film on the piezoelectric material and provides the sensing film with an elastic wave generated based on an electrical signal and an elastic wave output unit arranged on the other end of the sensing film on the piezoelectric material and senses a change in frequency of the electrical signal generated based on the provided elastic wave. The UV sensor improves sensitivity of the sensor by enabling the particles having large surface areas due to their characteristics to react with a larger amount of ultraviolet rays. the UV sensor can secure price competitiveness since the UV sensor measures a change in frequency of the elastic wave using zinc oxide (ZnO) nanoparticles.

An infrared detector and an infrared sensor including the infrared detector are provided. The infrared detector includes a plurality of quantum dots spaced apart from each other and including a first component, a first semiconductor layer covering the plurality of quantum dots, and a second semiconductor layer covering the first semiconductor layer.

A method and a light detector that includes (i) a photon to electron converter a photon to one or more photoelectrons; (ii) a photoelectron detection circuit that includes a photoelectron sensing region; (iii) a chamber; (iv) a bias circuit that is configured to supply to the light detector one or more biasing signals for accelerating a propagation of the one or more photoelectrons within the chamber and towards the photoelectron sensing region; (iv) a photoelectron manipulator that is configured to operate in a selected operational mode out of multiple operational modes that differ by their level of blocking, (v) a controller that is configured to control the photoelectron manipulator based on a feedback about the at least one of (a) the photon, (b) the one or more photoelectrons, (c) a previous photon and, (d) previous one or more photoelectrons.

Disclosed herein is a device including at least one photoconductor configured for exhibiting an electrical resistance Rphoto dependent on an illumination of a light-sensitive region of the photoconductor; and at least one photoconductor readout circuit, where the photoconductor readout circuit is configured for determining the electrical resistance Rphoto of the photoconductor, where the photoconductor readout circuit includes at least one bias voltage source configured for applying at least one modulated bias voltage to the photoconductor.

The various embodiments described herein include methods, devices, and systems for fabricating and operating photodetector circuitry. In one aspect, a photon detector system includes: (1) a first superconducting wire having a first threshold superconducting current; (2) a second superconducting wire having a second threshold superconducting current; (3) a resistor coupled to the first wire and the second wire; (4) current source(s) coupled to the first wire and configured to supply a current that is below the second threshold current; and (3) a second circuit coupled to the second wire. In response to receiving light at the first wire, the first wire transitions from a superconducting state to a non-superconducting state. In response to receiving light at the second wire while the first wire is in the non-superconducting state, the second wire transitions to a non-superconducting state, redirecting the first current to the second circuit.