A photoelectric detection circuit and a photoelectric detector are provided. The photoelectric detection circuit includes a first sub-circuit and a second sub-circuit. The first sub-circuit includes a first photoelectric sensing element, and the second sub-circuit includes a second photoelectric sensing element, and an electrical characteristic of the first photoelectric sensing element is substantially identical to an electrical characteristic of the second photoelectric sensing element, and the second photoelectric sensing element is shielded to prevent light from being incident on the second photoelectric sensing element.

A photoelectric detection circuit and a photoelectric detector are provided. The photoelectric detection circuit includes a first sub-circuit and a second sub-circuit. The first sub-circuit includes a first photoelectric sensing element, and the second sub-circuit includes a second photoelectric sensing element, and an electrical characteristic of the first photoelectric sensing element is substantially identical to an electrical characteristic of the second photoelectric sensing element, and the second photoelectric sensing element is shielded to prevent light from being incident on the second photoelectric sensing element.

Described is an arrangement for registering light, comprising: a MOS-transistor structure having a first source/drain region, a second source/drain region, and a bulk region at least partially between the first source/drain region and the second source/drain region, wherein the bulk region has a doping type different from another doping type of the first and the second source/drain regions, wherein in the bulk region charge carriers are generated in dependence of light impinging on the bulk region, wherein the generated charge carriers control a current flowing from the first source/drain region to the second source/drain region via at least a portion of the bulk region.

Described is an arrangement for registering light, comprising: a MOS-transistor structure having a first source/drain region, a second source/drain region, and a bulk region at least partially between the first source/drain region and the second source/drain region, wherein the bulk region has a doping type different from another doping type of the first and the second source/drain regions, wherein in the bulk region charge carriers are generated in dependence of light impinging on the bulk region, wherein the generated charge carriers control a current flowing from the first source/drain region to the second source/drain region via at least a portion of the bulk region.

An analog counter circuit for use with a digital pixel includes: an input; an output; a first stage electrically coupled to the input that is charged to an initial charge voltage; a second stage that includes an accumulating charge storage device; and a charge transfer device between the first and second stages that includes a transfer voltage. The charge transfer device allows charge from the first stage to pass to the second stage and be accumulated on the accumulating charge storage device as long as a voltage at a node in the first stage is greater than the transfer voltage.

An analog counter circuit for use with a digital pixel includes: an input; an output; a first stage electrically coupled to the input that is charged to an initial charge voltage; a second stage that includes an accumulating charge storage device; and a charge transfer device between the first and second stages that includes a transfer voltage. The charge transfer device allows charge from the first stage to pass to the second stage and be accumulated on the accumulating charge storage device as long as a voltage at a node in the first stage is greater than the transfer voltage.

A pixel for an image sensor includes a resistive microbolometer sensor portion, a visible image sensor portion, and an output path. The resistive microbolometer sensor portion outputs a signal corresponding to an infrared (IR) image sensed by the resistive microbolometer sensor portion. The resistive microbolometer sensor portion uses no bias current. The visible image sensor portion outputs a signal corresponding to a visible image sensed by the visible image sensor portion. The output path is shared by the resistive microbolometer sensor portion and the visible image sensor portion, and may be controlled to selectively output the signal corresponding to the IR image, the signal corresponding to the visible image, or a fused image based on the IR image and the visible image. The resistive microbolometer sensor portion may sense a near infrared image or a longwave infrared image.

Optical computing devices may include capacitance-based nanomaterial detectors. For example, an optical computing device may include a light source that emits electromagnetic radiation into an optical train extending from the light source to a capacitance-based nanomaterial detector; a material positioned in the optical train to optically interact with the electromagnetic radiation and produce optically interacted light; and the capacitance-based nanomaterial detector comprising one or more nano-sized materials configured to have a resonantly-tuned absorption spectrum and being configured to receive the optically interacted light, apply a vector related to the characteristic of interest to the optically interacted light using the resonantly-tuned absorption spectrum, and generate an output signal indicative of the characteristic of interest.

Optical computing devices may include capacitance-based nanomaterial detectors. For example, an optical computing device may include a light source that emits electromagnetic radiation into an optical train extending from the light source to a capacitance-based nanomaterial detector; a material positioned in the optical train to optically interact with the electromagnetic radiation and produce optically interacted light; and the capacitance-based nanomaterial detector comprising one or more nano-sized materials configured to have a resonantly-tuned absorption spectrum and being configured to receive the optically interacted light, apply a vector related to the characteristic of interest to the optically interacted light using the resonantly-tuned absorption spectrum, and generate an output signal indicative of the characteristic of interest.

A method, apparatus and computer program product are provided to determine the fluorescence lifetime in an efficient manner. In the context of a method electric charge generated by fluorescence emission during two overlapping time periods of a single measurement cycle is stored to form first and second measures. The electric charge generated during that segment of the two time periods during which the two time periods overlap is incorporated in the first measure and in the second measure. The method also includes determining a fluorescence lifetime based at least in part upon the first and second measures.