G01J1/46

Per-pixel detector bias control

A pixel includes a detector that changes its operating characteristics based on incident energy, an integration capacitor arranged to discharge stored charge through the detector based on changes in the operating characteristics, and an floating gate injection device disposed between the photo-diode and the integration capacitor that controls flow of the charge from the integration capacitor to the detector. The floating gate injection device has a gate, a source electrically coupled to the detector at a first node, and a drain electrically coupled to the integration capacitor. The gate has a control voltage (V.sub.T) stored therein to set to a per-pixel bias gate voltage to control a detector bias voltage of the detector at the first node.

Light sensor with dark current elimination having duo switch-capacitor circuits and a reverse capacitor

The present invention provides a light sensor with dark current elimination. A dark current from a covered photodiode and a sensed current from a photodiode are respectively transformed to a dark voltage and a sensed voltage by a controlled integration circuit. A reverse capacitor receives the dark voltage and the sensed voltage to cancel out for each other, and outputs a corrected sensing voltage.

Light sensor with dark current elimination having duo switch-capacitor circuits and a reverse capacitor

The present invention provides a light sensor with dark current elimination. A dark current from a covered photodiode and a sensed current from a photodiode are respectively transformed to a dark voltage and a sensed voltage by a controlled integration circuit. A reverse capacitor receives the dark voltage and the sensed voltage to cancel out for each other, and outputs a corrected sensing voltage.

SENSOR
20230009395 · 2023-01-12 ·

A sensor is provided. A first terminal of a first current source and a first terminal of a first transistor are connected to a cathode of the photodiode. A control terminal of a second transistor is connected to an output terminal of a first operational amplifier. A first terminal of the second transistor is connected to a second terminal of the first transistor through a first current mirror circuit. A second terminal of the second transistor is connected to a second current source, a second input terminal of a second operational amplifier and a first terminal of a third transistor. A first input terminal of the second operational amplifier is connected to the first terminal of the first transistor. A control terminal of the third transistor is connected to an output terminal of the second operational amplifier.

Event-based vision sensor and difference amplifier with reduced noise and removed offset

A circuit configured to amplify a signal from which an offset is cancelled includes an amplifier including an input stage configured to receive an input signal, the amplifier configured to amplify the input signal and output the amplified signal, and a switch including a transistor configured to reset the amplifier in response to a reset signal, the transistor including a body node connecting the transistor to the circuit, the transistor being configured to form a current path between the body node of the transistor and the input stage of the amplifier.

Event-based vision sensor and difference amplifier with reduced noise and removed offset

A circuit configured to amplify a signal from which an offset is cancelled includes an amplifier including an input stage configured to receive an input signal, the amplifier configured to amplify the input signal and output the amplified signal, and a switch including a transistor configured to reset the amplifier in response to a reset signal, the transistor including a body node connecting the transistor to the circuit, the transistor being configured to form a current path between the body node of the transistor and the input stage of the amplifier.

Solid-state image sensor and electronic device

To control an excess bias to an appropriate value in a light detection device. A solid-state image sensor includes a photodiode, a resistor, and a control circuit. In this solid-state image sensor, the photodiode photoelectrically converts incident light and outputs a photocurrent. Furthermore, in the solid-state image sensor, the resistor is connected to a cathode of the photodiode. Furthermore, in the solid-state image sensor, the control circuit supplies a lower potential to an anode of the photodiode as a potential of the cathode of when the photocurrent flows through the resistor is higher.

Solid-state image sensor and electronic device

To control an excess bias to an appropriate value in a light detection device. A solid-state image sensor includes a photodiode, a resistor, and a control circuit. In this solid-state image sensor, the photodiode photoelectrically converts incident light and outputs a photocurrent. Furthermore, in the solid-state image sensor, the resistor is connected to a cathode of the photodiode. Furthermore, in the solid-state image sensor, the control circuit supplies a lower potential to an anode of the photodiode as a potential of the cathode of when the photocurrent flows through the resistor is higher.

Linear regulation of SPAD shutoff voltage

Described herein is an electronic device, including a pixel and a turn-off circuit. The pixel includes a single photon avalanche diode (SPAD) having a cathode coupled to a high voltage node and an anode selectively coupled to ground through an enable circuit, and a clamp diode having an anode coupled to the anode of the SPAD and a cathode coupled to a turn-off voltage node. The turn-off circuit includes a sense circuit coupled between the turn-off voltage node and ground and configured to generate a feedback voltage, and a regulation circuit configured to sink current from the turn-off voltage node to ground based upon the feedback voltage such that a voltage at the turn-off voltage node maintains generally constant.

Photoconductor Readout Circuit

Disclosed herein is a device including at least one photoconductor configured for exhibiting an electrical resistance dependent on an illumination of a light-sensitive region of the photoconductor; and at least one photoconductor readout circuit, where the photoconductor readout circuit includes at least one voltage divider circuit, where the voltage divider circuit includes at least one reference resistor Rref being arranged in series with the photoconductor, where the photoconductor readout circuit includes at least one amplifier device, where the photoconductor readout circuit includes at least one capacitor arranged between an input of the amplifier device and an output of the voltage divider circuit.