A system for measuring a radiant exposure of electromagnetic radiation includes an accumulation detection module having a detector and configured to continuously monitor an electromagnetic radiation received by the detector; and an adaptive circuit configured to periodically interrogate the accumulation detection module; adjust a frequency of interrogation of the accumulation detection module based on an intensity of the electromagnetic radiation received by the detector; and autonomously transmit information related to an amount of the electromagnetic radiation received by the detector to a remote device.

An apparatus includes a photodetector configured to generate an electrical current based on received illumination. The apparatus also includes an integration capacitor configured to integrate the electrical current and generate an integrator voltage. The apparatus further includes an amplifier configured to control a transistor switch coupled in series between the photodetector and the integration capacitor. The apparatus also includes an event detector configured to sense a high-energy event affecting the photodetector. In addition, the apparatus includes a switchable clamp coupled across inputs of the amplifier, where the event detector is configured to close the switchable clamp in response to sensing the high-energy event.

There is provided a circuit to improve the sensing efficiency of pixels that uses the induction effect of a capacitor to duplicate a voltage deviation caused by additional electrons and uses a circuit to cancel out the voltage deviation during reading pixel data thereby improving the sensing efficiency.

There is provided a circuit to improve the sensing efficiency of pixels that uses the induction effect of a capacitor to duplicate a voltage deviation caused by additional electrons and uses a circuit to cancel out the voltage deviation during reading pixel data thereby improving the sensing efficiency.

Provided is a pixel circuit. The pixel circuit includes a conversion element forming a voltage of an input level at a first node, a first transistor adjusting the voltage of the first node to a first level in response to a first signal received at a first time interval, a first capacitive element forming a voltage at a second node based on the voltage of the first node, a second transistor adjusting a level of the voltage of the second node to a second level in response to the first signal, a third transistor forming a voltage at a third node, a fourth transistor outputting a current in response to a second signal received in a second time interval, and a. fifth transistor adjusting the voltage of the third node to a third level in response to a third signal received in a third time interval.

Provided is a pixel circuit. The pixel circuit includes a conversion element forming a voltage of an input level at a first node, a first transistor adjusting the voltage of the first node to a first level in response to a first signal received at a first time interval, a first capacitive element forming a voltage at a second node based on the voltage of the first node, a second transistor adjusting a level of the voltage of the second node to a second level in response to the first signal, a third transistor forming a voltage at a third node, a fourth transistor outputting a current in response to a second signal received in a second time interval, and a. fifth transistor adjusting the voltage of the third node to a third level in response to a third signal received in a third time interval.

To control an excess bias to an appropriate value in a light detection device.

A solid-state image sensor includes a photodiode, a resistor, and a control circuit. In this solid-state image sensor, the photodiode photoelectrically converts incident light and outputs a photocurrent. Furthermore, in the solid-state image sensor, the resistor is connected to a cathode of the photodiode. Furthermore, in the solid-state image sensor, the control circuit supplies a lower potential to an anode of the photodiode as a potential of the cathode of when the photocurrent flows through the resistor is higher.

A light detecting device includes first pixel circuitry including a first avalanche photodiode, and second pixel circuitry including a second avalanche photodiode, a first delay circuit including an input coupled to a cathode of the second avalanche photodiode, a first circuit including a first input coupled to the cathode of the second avalanche photodiode, and a second input coupled to an output of the first delay circuit. The light detecting device includes a control circuit coupled to an output of the first circuit and configured to control a potential of an anode of the first avalanche photodiode based on the output of the first circuit. The control circuit is configured to control a potential of an anode of the second avalanche photodiode based on the output of the first circuit.

Photonic processors are described. The photonic processors described herein are configured to perform matrix-matrix (e.g., matrix-vector) multiplication. Some embodiments relate to photonic processors arranged according to a dual-rail architecture, in which numeric values are encoded in the difference between a pair optical signals (e.g., in the difference between the powers of the optical signals). Relative to other architectures, these photonic processors exhibit increased immunity to noise. Some embodiments relate to photonic processors including modulatable detector-based multipliers. Modulatable detectors are detectors designed so that the photocurrent can be modulated according to an electrical control signal. Photonic processors designed using modulatable detector-based multipliers are significantly more compact than other types of photonic processors.

Photonic processors are described. The photonic processors described herein are configured to perform matrix-matrix (e.g., matrix-vector) multiplication. Some embodiments relate to photonic processors arranged according to a dual-rail architecture, in which numeric values are encoded in the difference between a pair optical signals (e.g., in the difference between the powers of the optical signals). Relative to other architectures, these photonic processors exhibit increased immunity to noise. Some embodiments relate to photonic processors including modulatable detector-based multipliers. Modulatable detectors are detectors designed so that the photocurrent can be modulated according to an electrical control signal. Photonic processors designed using modulatable detector-based multipliers are significantly more compact than other types of photonic processors.