An analog counter circuit for use with a digital pixel includes an input; an output; a first inverter connected to the input that produces on a first inverter output a time delayed inverted signal (RP*) from an input signal received at the input; a second inverter connected to the first inverter output that produces a time delayed signal (RP) at a second inverter output from the input signal and that is delayed relative to RP* and a control switch connected between a source voltage and a floating node. The control switch is controlled by the signal RP* on the first inverter output. The analog counter also includes a feedback capacitor connected between the second inverter output and the floating node; an accumulating capacitor that accumulates at least some of a charge that passes through the control switch; and an injection switch connected between the control switch and the accumulating capacitor.

An analog counter circuit for use with a digital pixel includes an input; an output; a first inverter connected to the input that produces on a first inverter output a time delayed inverted signal (RP*) from an input signal received at the input; a second inverter connected to the first inverter output that produces a time delayed signal (RP) at a second inverter output from the input signal and that is delayed relative to RP* and a control switch connected between a source voltage and a floating node. The control switch is controlled by the signal RP* on the first inverter output. The analog counter also includes a feedback capacitor connected between the second inverter output and the floating node; an accumulating capacitor that accumulates at least some of a charge that passes through the control switch; and an injection switch connected between the control switch and the accumulating capacitor.

Disclosed herein is a device including at least one photoconductor configured for exhibiting an electrical resistance Rphoto dependent on an illumination of a light-sensitive region of the photoconductor; and at least one photoconductor readout circuit, where the photoconductor readout circuit is configured for determining the electrical resistance Rphoto of the photoconductor, where the photoconductor readout circuit includes at least one bias voltage source configured for applying at least one modulated bias voltage to the photoconductor.

A pixelated sensor comprises a semiconductor substrate chip with a plurality of sensor pixels and a detector chip with a plurality of detector pixels. Each of the sensor pixels is configured as a photodiode and is electrically connected to an input node of one of the detector pixels. The detector pixels are further configured to convert and output the sensor input to an analog to digital converter. The detector chip further comprises first and second macropixels and a plurality of second macropixels, wherein each first macropixel is formed by subset of detector pixels switchably interconnected via a first conducting grid and wherein each second macropixel is formed by a subset of first macropixels switchably interconnected via a second conducting grid.

A pixelated sensor comprises a semiconductor substrate chip with a plurality of sensor pixels and a detector chip with a plurality of detector pixels. Each of the sensor pixels is configured as a photodiode and is electrically connected to an input node of one of the detector pixels. The detector pixels are further configured to convert and output the sensor input to an analog to digital converter. The detector chip further comprises first and second macropixels and a plurality of second macropixels, wherein each first macropixel is formed by subset of detector pixels switchably interconnected via a first conducting grid and wherein each second macropixel is formed by a subset of first macropixels switchably interconnected via a second conducting grid.

An example apparatus includes: a semiconductor substrate; a mechanical resonator supported by the substrate, the mechanical resonator including an array of capacitors; and a plasmonic infrared (IR) absorber including an array of metal structures. The mechanical resonator is between the substrate and the IR absorber.

An example apparatus includes: a semiconductor substrate; a mechanical resonator supported by the substrate, the mechanical resonator including an array of capacitors; and a plasmonic infrared (IR) absorber including an array of metal structures. The mechanical resonator is between the substrate and the IR absorber.

The present technology relates to a measurement circuit, a driving method, and an electronic instrument capable of reducing power consumption. In the measurement circuit, irradiation light is emitted from the light emitting unit toward the object, and light from the object is received to measure pulse waves or the like. The measurement circuit includes: a light receiving unit that receives light from an object; an integrating unit that performs integration of a current generated in accordance with the reception of the light by the light receiving unit and generates a voltage according to the amount of reception of the light; and a pulse generating unit that generates a pulse signal having a pulse width corresponding to the amount of reception of the light on the basis of the voltage. The present technology can be applied to electronic instruments such as wearable devices, for example.

The present technology relates to a measurement circuit, a driving method, and an electronic instrument capable of reducing power consumption. In the measurement circuit, irradiation light is emitted from the light emitting unit toward the object, and light from the object is received to measure pulse waves or the like. The measurement circuit includes: a light receiving unit that receives light from an object; an integrating unit that performs integration of a current generated in accordance with the reception of the light by the light receiving unit and generates a voltage according to the amount of reception of the light; and a pulse generating unit that generates a pulse signal having a pulse width corresponding to the amount of reception of the light on the basis of the voltage. The present technology can be applied to electronic instruments such as wearable devices, for example.

There are provided a circuit and a method for regulating a gate voltage, and a sensor applying the circuit. In the circuit, an input end of the storage module is connected to a first end of a signal storage unit, an output end thereof is connected to an input end of the comparison module, an output end of the comparison module is connected to an input end of the voltage regulation module, and an output end of the voltage regulation module is connected to a transmission gate. The storage module stores electrical signals outputted by the signal storage unit. The comparison module compares at least two of the electrical signals correspond to different gate voltages to obtain a comparison result. The voltage regulation module regulates, based on the comparison result, an output voltage according to a predetermined rule to change the gate voltage.