An object of the present invention is to provide a bolometer having a high TCR value and a low resistance, and a method for manufacturing the same.

The present invention relates to a bolometer manufacturing method including: fabricating a set of two carbon nanotube wires that are approximately parallel to each other at edges of a line shape, or fabricating a circular shape carbon nanotube wire at a circular circumference of a circular shape, by applying a semiconducting carbon nanotube dispersion liquid in the line shape or the circular shape on a substrate, and drying the dispersion liquid, a width of each wire being 5 μm or more; and connecting a part of each wire to a first electrode and a second electrode.

An infrared sensor is provided with an infrared light receiver, a signal pathway, and a first member. The infrared light receiver has a structure in which at least two materials having different coefficients of thermal expansion are layered. The signal pathway includes a first signal pathway allowing passage of a driving signal to be applied to the infrared light receiver. The driving signal has a current value equal to or greater than a prescribed magnitude, and the infrared light receiver deforms in response to the application of the driving signal to the infrared light receiver, thereby at least a portion of the infrared light receiver contacting the first member.

According to an example aspect of the present invention, there is provided a detector comprising an optically absorbing membrane suspended over a cavity between the membrane and a substrate, the substrate comprised in the detector, and a thermoelectric transducer attaching the optically absorbing membrane over the cavity, wherein the optically absorbing membrane forms a contacting element between n-type and p-type thermoelectric elements of the thermoelectric transducer.

The present disclosure is a infrared sensor capable of being integrated into a IR focal plane array. It includes of a CMOS based readout circuit with preamplification, noise filtering, and row/column address control. Using either a microbolometer device structure with either a thermal sensing element of vanadium oxide or amorphous silicon, a nanocomposite is fabricated on top of either of these materials comprising aligned or unaligned carbon nanotube films with IR trans missive layer of silicon nitride followed by one to five monolayers of graphene. These layers are connected in series minimizing the noise sources and enhancing the NEDT of each film. The resulting IR sensor is capable of NEDT of less than 1 mK. The wavelength response is from 2 to 12 microns. The approach is low cost using a process that takes advantage of the economies of scale of wafer level CMOS.

A floating bridge structure includes a substrate, a floating bridge layer, and at least one support. The floating bridge layer is on the substrate and substantially parallel to an upper surface of the substrate. The support extends on a vertical surface from the substrate to the floating bridge layer, in which the vertical surface is substantially perpendicular to the upper surface of the substrate.

The present invention includes an electromagnetic wave detector, and a pair of arm portions and that are positioned on both sides with the electromagnetic wave detector interposed therebetween. The electromagnetic wave detector includes a temperature detection element, and electromagnetic wave absorbers which cover at least a part of the temperature detection element. Each of the arm portions includes a conductor layer which is in a line shape and electrically connected to the temperature detection element, and dielectric layers which are disposed on both sides of the conductor layer. In a short direction of the dielectric layers in a plan view, the conductor layer has a shape protruding outward beyond both end portions of the dielectric layers in the short direction.

A bolometer having a high TCR, a bolometer array, and a method for manufacturing the same are provided.

The present invention is related to a bolometer including a substrate, a positively charged adhesive layer provided on the substrate, and a bolometer film comprising semiconducting carbon nanotubes and a negative thermal expansion material, both of which are negatively charged, and are electrostatically adsorbed to the adhesive layer.

The present disclosure includes an electromagnetic wave detector, and a pair of arms that are positioned on both sides with the electromagnetic wave detector interposed therebetween. The electromagnetic wave detector includes a temperature detection element, and electromagnetic wave absorbers which cover at least a part of the temperature detection element. The structure body has a structure in which the electromagnetic wave detector is hung or suspended with respect to a substrate facing the electromagnetic wave detector via the pair of arms. Area of a surface of the pair of arms on a side facing the substrate are larger than area of surface thereof on a side opposite to the side facing the substrate.

A detector for detecting terahertz electromagnetic radiation comprises a substrate and a pair of electrically isolated detector elements supported thereon. Each detector element comprises a pair of antenna elements having a gap therebetween and a switch element comprising one or more pieces of photoconductive semiconductor material connected between the antenna elements across the gap. The pairs of antenna elements of the respective detector elements are configured so that, when the switch element is conductive, current is generated between the antenna elements by polarisation components of incident terahertz electromagnetic radiation having polarisation directions in respective sensing directions that are perpendicular, thereby providing simultaneous detection of perpendicular polarisation components of incident terahertz electromagnetic radiation.

A two-dimensional terahertz radiation detector includes a spectral conversion element, an array of microlenses, and a matrix image sensor. Such a detector can be particularly compact, light, and inexpensive. For some embodiments, it can be used to produce multispectral images of an external scene, from terahertz radiation that originates from the scene.