A thermal processing system for performing thermal processing can include a workpiece support plate configured to support a workpiece and heat source(s) configured to heat the workpiece. The thermal processing system can include window(s) having transparent region(s) that are transparent to electromagnetic radiation within a measurement wavelength range and opaque region(s) that are opaque to electromagnetic radiation within a portion of the measurement wavelength range. A temperature measurement system can include a plurality of infrared emitters configured to emit infrared radiation and a plurality of infrared sensors configured to measure infrared radiation within the measurement wavelength range where the transparent region(s) are at least partially within a field of view the infrared sensors. A controller can be configured to perform operations including obtaining transmittance and reflectance measurements associated with the workpiece and determining, based on the measurements, a temperature of the workpiece less than about 600° C.

An IR photodetector includes an electrically conductive layer, a first dielectric layer over the electrically conductive layer, and a phase change material layer over the first dielectric layer. The IR photodetector further includes first and second electrically conductive contacts coupled to the phase change material layer, and a graphene layer over the phase change material layer and having a perforated pattern therein. The IR photodetector includes circuitry configured to apply a bias voltage between the first and second electrically conductive contacts, and detect a sensing current in the phase change material layer caused by IR radiation received by the graphene layer, the IR radiation having a frequency range based upon the bias voltage.

An example object of the present invention is to provide a bolometer-type detector capable of reducing heat transfer between pixels. A bolometer-type detector according to an example aspect of the present invention includes a plurality of pixels, and at least includes: a substrate, a heat insulating layer provided on the substrate, bolometer films provided on individual pixels on the heat insulating layer, and a wiring for signal output connected to contact electrodes provided in contact with the bolometer films, wherein the wiring for signal output is disposed in a layer different from the bolometer films, and the heat insulating layer between adjacent pixels is removed at least partially in the depth direction and in a region of a length of 50% or longer and a width of 100 nm or wider of a closed curve that surrounds each bolometer film.

A microbolometer may include a sensitive material based on vanadium oxide (VO.sub.x) with an additional chemical element such as boron (B), but excluding nitrogen (N), the sensitive material wherein the sensitive material (i) is amorphous, (ii) has an electrical resistivity at ambient temperature in a range of from 1 to 30 Ω.Math.cm, (ii) has a homogeneous chemical composition, and (iv) has an amount of boron, defined as a ratio of a number of boron to vanadium atoms to that of vanadium, at least equal to 0.086.

A bolometer having a high TCR, a bolometer array, and a method for manufacturing the same are provided.

The present invention is related to a bolometer including a substrate, a positively charged adhesive layer provided on the substrate, and a bolometer film comprising semiconducting carbon nanotubes and a negative thermal expansion material, both of which are negatively charged, and are electrostatically adsorbed to the adhesive layer.

Various embodiments include heat and volatile-organic-compounds detecting systems. In one example, the heat-detecting system includes at least one heat sensor mounted externally to a device, such as a local power-box (LPB). The heat sensor has an area-of-detection to detect heat emitted from at least one face of the LPB at one or more locations. The heat-detecting system also includes a high-absorptance infrared-collector (HAIC) formed within the LPB to collect excessive heat generated by a component within the LPB. The excessive heat is correlated to a pre-determined temperature level, and a temperature of the collected excessive heat is measured by the heat sensor. Each of the heat sensor and the HAIC are coupled to a control module. Other apparatuses, designs, and methods are disclosed.

Provided is a long-wave infrared detecting element including a magnetic field generator configured to generate a magnetic field, a substrate provided on the magnetic field generator, a magnetic-electric converter that is spaced apart from the substrate and configured to generate an electrical signal based on the magnetic field generated by the magnetic field generator, and an support unit that is provided on the substrate and supports the magnetic-electric converter in a state in which the magnetic-electric converter is spaced apart from the substrate, the support unit being configured to generate heat by absorbing incident infrared radiation, wherein the electrical signal changes corresponding to temperature changes of the magnetic-electric converter based on the incident infrared radiation directly absorbed in the magnetic-electric converter and temperature changes of the magnetic-electric converter based on the incident infrared radiation absorbed in the support unit.

An infrared sensor cover includes a decorative layer, a transparent first base, and a transparent second base. The decorative layer includes a first surface and a second surface opposite the first surface. The first base is made of a resin molded body and disposed on the first surface of the decorative layer. The second base is made of a resin molded body and disposed on the second surface of the decorative layer. An absolute value of a difference between refractive indices of a first resin material of the first base and a second resin material of the second base is less than or equal to 0.05. An absolute value of a difference between heat deflection temperatures of the first resin material and the second resin material is greater than or equal to 15 degrees.

The present invention relates to a terahertz biometric imaging package comprising: an image sensor comprising an antenna pixel array arranged to detect terahertz radiation transmitted from an object, for capturing an image, each antenna pixel comprises a power detector including an antenna structure for receiving terahertz radiation, wherein the power detector is configured to convert a detected terahertz radiation to a sensing signal at a lower frequency than the frequency of the terahertz radiation, a package top cover arranged to cover the antenna pixel array, wherein the image sensor is configured to capture a terahertz image of an object located on an opposite side of the package top cover, a package bottom part arranged on the other side of the antenna pixel array opposite from the package top cover, wherein the antenna pixel array is encapsulated between the package top cover and the package bottom part.

Embodiments disclosed herein facilitates the monitoring of direct ultraviolet B (UVB) radiation exposure by a person via a system having a sensor (such as Lanthanum doped lead zirconate titanate (PLZT) thin-film sensors or other ferroelectric-based sensors) sensitive to UVB radiation. The system beneficially provides current real-time dosage information associated with Vitamin D production by the person as well as real-time indication of safe exposure and/or harmful exposure to current UVB radiation conditions while also, in some embodiments, takes into consideration a person's age, skin type and sensitivity, body surface area exposed.