The present disclosure relates to an image sensor structure and a manufacturing method thereof. A detection structure layer and a blind pixel structure layer are used. The detection structure layer and the blind pixel structure layer are effectively combined and further formed by ion implantation. Thus, the space ratio of a single pixel is reduced, the integration and device sensitivity are improved, and the blind pixel array and the pixel array are also in the same environment, thereby further improving the detection sensitivity and reducing the detection error.

A first radiance meter is directed toward an object to be measured, radiance is measured through a space where dust is present with the use of at least two wavelengths by the first radiance meter, second radiance meters which are equal in number to one or more objects having temperatures different from that of the object to be measured are directed toward the objects, radiances are measured through the space with the use of at least two wavelengths by the second radiance meters respectively, and a temperature of the object to be measured, a temperature of the dust, and concentration of the dust are measured from the radiances measured by the first radiance meter and the second radiance meters.

A method for contactlessly establishing a temperature of a surface includes determining the temperature measurement values of the plurality of blind pixels and determining temperature measurement values of the plurality of measurement pixels. The method further includes determining a temperature measurement value and a temperature measurement values by subtracting the temperature measurement value of the first blind pixel of the plurality of blind pixels from a temperature measurement value of a second blind pixel of the plurality of blind. The method further includes correcting the temperature measurement values by pixel-associated temperature drift components in each case, wherein the temperature drift components are determined using the temperature measurement value and/or the temperature measurement value.

A first radiance meter is directed toward an object to be measured, radiance is measured through a space where dust is present with the use of at least two wavelengths by the first radiance meter, second radiance meters which are equal in number to one or more objects having temperatures different from that of the object to be measured are directed toward the objects, radiances are measured through the space with the use of at least two wavelengths by the second radiance meters respectively, and a temperature of the object to be measured, a temperature of the dust, and concentration of the dust are measured from the radiances measured by the first radiance meter and the second radiance meters.

A temperature sensor includes a first infrared measuring means, a second infrared measuring means, and a calculating unit. The first infrared measuring means measures infrared rays emitted from an object and outputs a first voltage. The second infrared measuring means measures infrared rays emitted from around the object and outputs a second voltage. The calculating unit calculates the output temperature of the object from the first voltage, calculates the ambient temperature of the object from the second voltage, and corrects the output temperature based on the ambient temperature to calculate the temperature of the object.

To provide an infrared temperature sensor that is corrected in detected temperature while ensuring high responsiveness. An infrared temperature sensor 10 according to the present invention includes a heat conversion film 40, an infrared detection element 43 held by the heat conversion film 40, a temperature compensation element 45 that is provided adjacently to the infrared detection element 43 and is held by the heat conversion film 40, a light guide part 59 that guides entered infrared rays toward the infrared detection element 43, and a blocking part 27 that blocks the infrared rays from being incident on the temperature compensation element 45, in which an inner surface of the light guide part 59 configures an irradiation surface 57 to be irradiated with the infrared rays, and the irradiation surface 57 includes a correction region 58 that is different in emissivity of the infrared rays from surroundings.

An SMD-enabled infrared thermopile sensor has at least one miniaturized thermopile pixel on a monolithically integrated sensor chip accommodated in a hermetically sealed housing which consists of an at least partially non-metallic housing substrate and a housing cover. A gas or a gas mixture is contained in the housing. The sensor has a particularly low overall height, in particular in the z direction. This is achieved by virtue of an aperture opening being introduced in the housing cover opposite the thermopile pixel(s), which aperture opening is closed with a focusing lens which focuses the radiation from objects onto the thermopile pixel(s) on the housing substrate, and by virtue of a signal processing unit being integrated on the same sensor chip next to the thermopile pixels, wherein the total housing height and the housing cover are at most 3 mm or less than 2.5 mm.

A sensor device, a method for operating a sensor device and an electronic assembly comprising a sensor device are disclosed. In an embodiment a sensor device includes a first sensor unit and a second sensor unit in a common housing, wherein each of the first and second sensor units comprises a heater element and a temperature sensor element, wherein the housing comprises a cover element having an opening, the cover element covering the first sensor unit, and wherein the opening is arranged over the second sensor unit.

The present disclosure is directed to a sensor package having a thermopile sensor and a reference (or dark channel) thermopile sensor disposed therein for temperature measurements. In one or more implementations, the sensor package includes a substrate, a thermopile sensor disposed over the substrate, a reference thermopile sensor disposed over the substrate, a reference temperature sensor disposed over the substrate surface, a lid assembly disposed over the thermopile sensor and the reference thermopile sensor, and a thermo-optical shield. The thermo-optical shield defines an aperture over the thermopile sensor such that at least a portion of the thermo-optical shield is positioned over the reference thermopile sensor to provide optical and thermal shielding for portions of the sensor package.

Improved techniques for thermal imaging and gas detection are provided. In one example, a system includes a first set of filters configured to pass first filtered infrared radiation comprising a first range of thermal wavelengths associated with a background portion of a scene. The system also includes a second set of filters configured to pass second filtered infrared radiation comprising a second range of thermal wavelengths associated with a gas present in the scene. The first and second ranges are independent of each other. The system also includes a sensor array comprising adjacent infrared sensors configured to separately receive the first and second filtered infrared radiation to capture first and second thermal images respectively corresponding to the background portion and the gas. Additional systems and methods are also provided.