The invention relates to a device for the spectrally resolved detection of optical radiation (5) during a thermal process, more particularly during laser processing. The device comprises at least two elements (4.1, 4.2) which are light-sensitive in one 5 predefined wavelength range each, a reflective diffraction grating (2), and at least one lens (3) for focusing and collimation. The device optionally comprises a reflective beam splitter (1) designed to divide the incident optical radiation (5) into a plurality of partial beams (5.1, 5.2). Said reflective beam splitter (1) is disposed upstream of the at least one lens (3) along the propagation direction of the optical radiation (5). The partial beams (5.1, 5.2) are spectrally split by means of the diffraction grating (2), and at least the first order of diffraction is deflected back through the at least one lens (3) onto one of the light-sensitive elements (4.1, 4.2).

The invention relates to a device for the spectrally resolved detection of optical radiation (5) during a thermal process, more particularly during laser processing. The device comprises at least two elements (4.1, 4.2) which are light-sensitive in one 5 predefined wavelength range each, a reflective diffraction grating (2), and at least one lens (3) for focusing and collimation. The device optionally comprises a reflective beam splitter (1) designed to divide the incident optical radiation (5) into a plurality of partial beams (5.1, 5.2). Said reflective beam splitter (1) is disposed upstream of the at least one lens (3) along the propagation direction of the optical radiation (5). The partial beams (5.1, 5.2) are spectrally split by means of the diffraction grating (2), and at least the first order of diffraction is deflected back through the at least one lens (3) onto one of the light-sensitive elements (4.1, 4.2).

A method and system for calibrating temperature measurement devices, such as pyrometers, in thermal processing chambers are disclosed. According to the present invention, the system includes a calibrating light source that emits light energy onto a substrate contained in the thermal processing chamber. A light detector then detects the amount of light that is being transmitted through the substrate. The amount of detected light energy is then used to calibrate a temperature measurement device that is used in the system.

The present disclosure relates to systems, apparatus, and methods for monitoring plate temperature for semiconductor manufacturing. In one or more embodiments, a system for processing substrates and applicable for semiconductor manufacturing includes a chamber body including one or more sidewalls. The system includes a lid and a window, the one or more sidewalls, the window, and the lid at least partially defining an internal volume. The system includes one or more heat sources configured to heat the internal volume, a substrate support disposed in the internal volume, and a first optical sensor configured to detect energy having a first wavelength that is less than 4.0 microns. The system includes a second optical sensor configured to detect energy having a second wavelength that is less than the first wavelength.

The present disclosure relates to systems, apparatus, and methods for monitoring plate temperature for semiconductor manufacturing. In one or more embodiments, a system for processing substrates and applicable for semiconductor manufacturing includes a chamber body including one or more sidewalls. The system includes a lid and a window, the one or more sidewalls, the window, and the lid at least partially defining an internal volume. The system includes one or more heat sources configured to heat the internal volume, a substrate support disposed in the internal volume, and a first optical sensor configured to detect energy having a first wavelength that is less than 4.0 microns. The system includes a second optical sensor configured to detect energy having a second wavelength that is less than the first wavelength.

An infrared imaging system includes a detector configured to detect wavelengths in a first infrared wavelength band and a second infrared wavelength band, shorter than the first infrared wavelength band, a light source configured to output light in the second infrared wavelength band to an object, and an identify circuit configured to identify the object based on spectral characteristics of light returned from the object detected by the detector. The second infrared wavelength band is an extended short wavelength infrared band.

An infrared imaging system includes a detector configured to detect wavelengths in a first infrared wavelength band and a second infrared wavelength band, shorter than the first infrared wavelength band, a light source configured to output light in the second infrared wavelength band to an object, and an identify circuit configured to identify the object based on spectral characteristics of light returned from the object detected by the detector. The second infrared wavelength band is an extended short wavelength infrared band.

A temperature detector capable of detecting temperature of a semiconductor wafer with high accuracy is provided. In standardizing a spectrum of light measured by a photodetector, a controller uses as a local minimum wavelength a wavelength corresponding to bandgap energy of a semiconductor at absolute zero to set as a local minimum value a minimum value of a light intensity in a wavelength region shorter than the local minimum wavelength, uses as a first maximum wavelength a wavelength corresponding to a difference between bandgap energy and thermal energy of a semiconductor at the highest temperature assumed as a temperature measurement range to set as a local maximum value a value obtained by taking a difference with a local minimum value from the maximum value of the light intensity in a wavelength region shorter than the first maximum wavelength, and performs a difference processing with the local minimum value with respect to the spectrum of the measured light to divide it by the local maximum value, thereby standardizing it.

A sensing device is provided, which comprises: a substrate; a circuit layer disposed on the substrate, the circuit layer comprising a switch element; a reflector disposed on the circuit layer, the reflector comprising a first reflection part and a second reflection part separated from each other, wherein the first reflection part is electrically connected to the switch element, and the second reflection part receives a voltage; and a sensing element disposed on the reflector, the sensing element separated from the reflector by a gap, wherein the sensing element comprises a first absorbing part, a second absorbing part and a sensing part disposed on the first absorbing part and the second absorbing part; wherein in a normal direction of the sensing device, the first absorbing part and the second reflection part are not overlapped, and the second absorbing part and the first reflection part are not overlapped.

A sensing device is provided, which comprises: a substrate; a circuit layer disposed on the substrate, the circuit layer comprising a switch element; a reflector disposed on the circuit layer, the reflector comprising a first reflection part and a second reflection part separated from each other, wherein the first reflection part is electrically connected to the switch element, and the second reflection part receives a voltage; and a sensing element disposed on the reflector, the sensing element separated from the reflector by a gap, wherein the sensing element comprises a first absorbing part, a second absorbing part and a sensing part disposed on the first absorbing part and the second absorbing part; wherein in a normal direction of the sensing device, the first absorbing part and the second reflection part are not overlapped, and the second absorbing part and the first reflection part are not overlapped.