The present disclosure provides a bolometer including a substrate, a reflecting mirror on the substrate, and a temperature sensing unit above the reflecting mirror. The temperature sensing unit includes a first insulating layer, a thermistor on the first insulating layer, a second insulating layer on the thermistor, an electrode layer in the second insulating layer and right above the thermistor, and a metal meta-surface in the second insulating layer and right above the electrode layer. The electrode layer includes a plurality of electrodes separated from each other. A projection region of the metal meta-surface on the thermistor is equal to or larger than the thermistor.

Provided is a long-wave infrared (LWIR) sensor including a substrate, a magnetic resistance device on the substrate, and an LWIR absorption layer on the magnetic resistance device, wherein a resistance of the magnetic resistance device changes based on temperature, and wherein the LWIR absorption layer is configured to absorb LWIR rays and generate heat.

A thermal imaging device having a scan mechanism operable to effectuate sequentially predetermined offsets, each configured between a thermal image of thermal radiations in a defined area on an imaging plane and an array of micro mirrors configured on a substrate. A respective image of a light pattern of a light beam reflected by a light reflection portion of each respective micro mirror in the array can be captured, when a rotation of the respective micro mirror, caused by radiation incident on a radiation absorption surface of the respective micro mirror, is stabilized at a respective offset. After computing a respective measurement of intensity measured by the respective micro mirror based on the respective image captured for the respective offset, a processor computes measurements of intensity of radiation in sub-areas of the thermal image, from measurements of intensity for the predetermined offsets, to generate a high resolution output.

A thermal imaging device having a scan mechanism operable to effectuate sequentially predetermined offsets, each configured between a thermal image of thermal radiations in a defined area on an imaging plane and an array of micro mirrors configured on a substrate. A respective image of a light pattern of a light beam reflected by a light reflection portion of each respective micro mirror in the array can be captured, when a rotation of the respective micro mirror, caused by radiation incident on a radiation absorption surface of the respective micro mirror, is stabilized at a respective offset. After computing a respective measurement of intensity measured by the respective micro mirror based on the respective image captured for the respective offset, a processor computes measurements of intensity of radiation in sub-areas of the thermal image, from measurements of intensity for the predetermined offsets, to generate a high resolution output.

Each of first and second beams has a connection portion connected to a base substrate and a separated portion away from the base substrate, and is physically joined to an infrared receiver at the separated portion. The infrared receiver is supported by the first and second beams, and includes lower electrode, upper electrode, and a resistance change film. The resistance change film is sandwiched by the lower electrode and upper electrode in a thickness direction, each of the lower and upper electrodes is electrically connected to the resistance change film, the lower and upper electrodes are electrically connected to first wiring and second wiring, respectively, at least one electrode selected from the lower electrode and the upper electrode has a line-and-space structure, and an infrared reflection film is provided at a position on a surface of the base substrate facing the infrared receiver.

A temperature measuring method and device is capable of measuring temperature of a gas, and particularly temperature of a gas that contains water vapor, in a non-contact manner and with good precision. A spectroscopic unit 10 acquires at least a light intensity in a first wavelength band and a light intensity in a second wavelength band, from radiated light from water vapor that is an object to be measured. The first wavelength band and the second wavelength band are both near infrared region bands. A central wavelength of the first wavelength band and a central wavelength of the second wavelength band are set to be mutually different values. A temperature calculation unit calculates temperature of water vapor using a ratio of light intensity in the first wavelength band to light intensity in the second wavelength band.

A sensor configured to sense heat or infrared light including a substrate includes a plurality of recess portions; a cavity inside the substrate along a bottom surface and opposing side surfaces of the substrate; a lower reflective layer disposed on at least one of an upper surface of the bottom surface of the substrate, a lower surface of the bottom surface of the substrate, and a surface opposite to the lower surface of the bottom surface of the substrate; a first electrode and a second electrode disposed inside both side surfaces of the recess portion and facing each other; a pixel structure configured to sense heat or infrared light inside the recess portion and embedded in the substrate; and a planarization layer covering the entire upper portion of the substrate.

Techniques for reducing a likelihood of detection of an imaging system by another imaging system are provided. For example, a mechanism may be used to interrupt an optical path between pulse biased thermal sensors and an aperture of the system when the pulsed biased thermal sensors are pulse biased. For example, emissions may be directed to a beam dump. Other techniques may include a mechanism for linearly moving the thermal sensor array or rotating a mirror.

Techniques for reducing a likelihood of detection of an imaging system by another imaging system are provided. For example, a mechanism may be used to interrupt an optical path between pulse biased thermal sensors and an aperture of the system when the pulsed biased thermal sensors are pulse biased. For example, emissions may be directed to a beam dump. Other techniques may include a mechanism for linearly moving the thermal sensor array or rotating a mirror.

A temperature measuring method and device is capable of measuring temperature of a gas, and particularly temperature of a gas that contains water vapor, in a non-contact manner and with good precision. A spectroscopic unit 10 acquires at least a light intensity in a first wavelength band and a light intensity in a second wavelength band, from radiated light from water vapor that is an object to be measured. The first wavelength band and the second wavelength band are both near infrared region bands. A central wavelength of the first wavelength band and a central wavelength of the second wavelength band are set to be mutually different values. A temperature calculation unit calculates temperature of water vapor using a ratio of light intensity in the first wavelength band to light intensity in the second wavelength band.