To provide an infrared sensor apparatus that has a small profile and has a small heat capacity of the light guiding path member, and therefore can measure a temperature with high accuracy. The present infrared sensor apparatus includes: an infrared sensor body and a light guiding path member that is provided so as to surround at least the infrared receiving surface of the infrared sensor body and that has an opening immediately above the infrared receiving surface, wherein the light guiding path member is made of a plate material and at least one of the surfaces surrounding the infrared receiving surface is an infrared reflecting surface that is composed of an inclined plate part with the surface thereof on the infrared receiving surface side being inclined towards the opening side.

A floating bridge structure includes a substrate, a floating bridge layer, and at least one support. The floating bridge layer is on the substrate and substantially parallel to an upper surface of the substrate. The support extends on a vertical surface from the substrate to the floating bridge layer, in which the vertical surface is substantially perpendicular to the upper surface of the substrate.

The invention discloses an integrated device for ear temperature measurement and non-contact temperature measurement, comprising a main body shell, a temperature measurement control unit and a display unit in the main body shell and a temperature measurement probe at head of the main body shell. The temperature measurement probe is composed of a shell, a temperature sensor in the shell and a non-contact temperature measurement component on the shell. The non-contact temperature measurement component is dismountable and has a non-contact temperature measurement channel in. After the non-contact temperature measurement component and the shell of the temperature measurement probe are assembled, the non-contact temperature measurement channel and the shell of the temperature measurement probe will form a necessary infrared receiving channel to realize non-contact temperature measurement. After the non-contact temperature measurement component is demounted from the shell of the temperature measurement probe, the temperature measurement probe can realize ear temperature measurement independently.

A reflective type passive infrared motion detection system includes a housing, a sensor element and a reflecting element. The sensor element is disposed on the housing. The reflecting element is disposed on the housing and has a plurality of reflecting tiers. Each reflecting tier has a plurality of reflecting curved surfaces, the reflecting curved surfaces are arranged along a first axial direction in sequence, and the reflecting tiers are arranged along a second axial direction in sequence. The reflecting curved surfaces respectively have different azimuth angles. An aperture width of each reflecting curved surface along a direction perpendicular to the second axial direction is positively correlated with a reciprocal of a cosine value of the corresponding azimuth angle. An aperture length of the reflecting curved surfaces of each tier along a direction of the second axial direction is positively correlated with square of a distance of the corresponding infrared source.

A temperature detection device (10) for a vehicle heater detects a fluid temperature. The device includes a temperature sensor (12) as well as a contact element (14) with a first side (16), around which the fluid can flow in at least some sections, and with a second side (18) facing away from the first side (16). The temperature sensor (12) is configured as a radiation sensor. The contact element (14) is arranged relative to the temperature sensor (12) such that at least a part of the radiation emitted from the second side (18) of the contact element (14) can be received by the temperature sensor (12).

Thermopile infrared sensor structure with a high filling level in a housing filled with a medium (15), consisting of a carrier substrate (11) which has electrical connections (28, 28) to the outside and is closed with an optical assembly (13), wherein a sensor chip (14) is applied to the carrier substrate (11) in the housing, which chip has a plurality of thermoelectric sensor element structures (16), the so-called hot contacts (10) of which are located on individual diaphragms (3) which are stretched across a respective cavity (9) in a silicon carrying body (24) with good thermal conductivity, wherein the cold contacts (25) are located on or in the vicinity of the silicon carrying body (24). The problem addressed by the invention is that of specifying a thermopile infrared array sensor (sensor cell) which, with a small chip size, has a high thermal resolution and a particularly high filling level. This sensor is preferably intended to be operated in gas with a normal pressure or a reduced pressure and is intended to be able to be mass-produced in a cost-effective manner under ultra-high vacuum without complicated technologies for closing the housing. This is achieved by virtue of the fact that a radiation collector structure (17) is located above each individual diaphragm (3) of the sensor element structures (16) which spans a cavity (9).

A radiation detection technique employs field enhancing structures and electroluminescent materials to converts incident Terahertz (THz) radiation into visible light and/or infrared light. In this technique, the field-enhancing structures, such as split ring resonators or micro-slits, enhances the electric field of incoming THz light within a local area, where the electroluminescent material is applied. The enhanced electric field then induces the electroluminescent material to emit visible and/or infrared light via electroluminescent process. A detector such as avalanche photodiode can detect and measure the emitted light. This technique allows cost-effective detection of THz radiation at room temperatures.

A sensor according to an embodiment of the present disclosure includes a substrate, a diaphragm including a light absorbing film disposed with a cavity interposed between the light absorbing film and the substrate, a beam portion that supports the diaphragm on the substrate, and a temperature sensing element that detects a temperature change of the light absorbing film. The light absorbing film contains a fibrous material or a sheet-like material that absorbs terahertz waves or infrared rays. The mean value of angles formed by a direction of the fibrous material or a planar direction of a sheet and a direction parallel to the substrate is 45 or less at least in a part of a region of the light absorbing film.

Compact thermal sensor modules, which in some implementations can be manufactured in wafer-level fabrication processes, include features composed of or coated with a low-emissivity material to reduce or prevent detection by a sensor of radiation emitted by other parts of the module. For example, spacers that separate an optics substrate and a sensor package from one another can be composed of or coated with such a low emissivity material. In some cases, the low emissivity material has an emissivity of no more than 0.1.

A cw terahertz image beam is upconverted by a nonlinear optical process (e.g., sum- or difference-frequency generation with a near IR cw upconverting beam). The upconverted image is acquired by a near IR image detector. The bandwidths and center wavelengths of the terahertz image beam and the upconverting beam are such that wavelength filtering can be employed to permit an upconverted image beam to reach the detector while blocking or substantially attenuating the upconverting beam.