G01J5/0837

Detector Device with Photoconductive Body
20190204216 · 2019-07-04 ·

A solid-state device for photo detection, in general, of terahertz radiation is disclosed. One aspect is a detector device comprising a body having a photoconductive material, a first antenna element connected to a first portion of the body, and a second antenna element connected to a second portion of the body. The first antenna element and the second antenna element are arranged to induce an electric field in the body in response to an incident signal. Further, the device has a waveguide arranged to couple light into the photoconductive material via a coupling interface between the waveguide and the body, where the coupling interface faces away from the first portion and the second portion of the body and is closer to the first portion than to the second portion.

Bowtie nanoantennas for efficient thermophotovoltaics and enhanced sensitivity IR photodetectors

A matching technique and the field enhancement at the terminals of a bowtie nanoantenna is presented to develop compact, highly efficient, and flexible thermophotovoltaic (TPV) cells. The bowtie antenna is designed for maximum power transfer to a near infrared band of a TPV cell. In one example, a small cube of indium gallium arsenside antimode or another suitable material with a low bandgap energy of 0.52 eV is mounted at the terminals of the antenna. Such a load presents a frequency dependent impedance with a high resistance and capacitance at the desired frequency (180THz). For maximum power transfer, a high impedance bowtie antenna operating at the anti-resonance mode connected to an inductive transmission line to compensate for the load capacitance is realized. The same antenna and load configuration with the semiconductor material used in photoconductive mode is used to realize a sensitive uncooled photodetector.

High temperature near-field probe for sensing and energy harvesting applications based upon thermal emission

A near-field probe (and associated method) compatible with near-infrared electromagnetic radiation and high temperature applications above 300? C. (or 500? C. in some applications) includes an optical waveguide and a photonic thermal emitting structure comprising a near-field thermally emissive material coupled to or part of the optical waveguide. The photonic thermal emitting structure is structured and configured to emit near-field energy responsive to at least one environmental parameter of interest, and the near-field probe is structured and configured to enable extraction of the near-field energy to a far-field by coupling the near-field energy into one or more guided modes of the optical waveguide.

Rectifier for electromagnetic radiation

A rectifier is provided for converting an oscillating electromagnetic field into a direct current and comprises an electrically conductive antenna layer configured to absorb electromagnetic radiation, an electrically conductive mirror layer configured to provide an electromagnetic mirror charge of the antenna layer, an electrically insulating tunnel barrier layer positioned between the antenna layer and the mirror layer, and an electronic circuit electrically connected between the conductive mirror layer and the conductive antenna layer. The rectifier employs a metamaterial configuration for room temperature rectification of radiation in regions of the electromagnetic spectrum comprising the MWIR and LWIR regions. Methods for use of the rectifier in rectifying and detecting radiation are described.

DETECTOR FOR TERAHERTZ ELECTROMAGNETIC WAVES

A detector for terahertz electromagnetic waves includes a terahertz optomechanical transducer to transform an incident electromagnetic wave, having a terahertz frequency within a terahertz frequency band, into a measurable mechanical response; and a detection device for detecting an output signal. The terahertz optomechanical transducer includes a first element and an opposite element forming with the first element a capacitive gap.

Terahertz CMOS sensor

An imaging sensor for accepting terahertz signals, including a die made of a dielectric material, one or more antennas for receiving terahertz signals, positioned on top of the die or in an upper layer of the die, each antenna having a CMOS detector electrically coupled to the antenna and positioned in the die below the antenna, a metal shield layer in the die below the antennas and above the CMOS detectors, shielding the CMOS detector from interference signals, a shielding layer under the die comprising a back metal coating and/or a layer of silver epoxy glue for attaching the bottom of the die to a lead frame.

PLASMON-ENHANCED BELOW BANDGAP PHOTOCONDUCTIVE TERAHERTZ GENERATION AND DETECTION

Disclosed are systems and methods for improving applications involving the generation and detection of electromagnetic radiation at terahertz (THz) frequencies. Embodiments of the systems and methods include the fabrication and use of plasmonic devices that enhance light-matter interaction at the nanometer scale by extreme focusing with nanostructured metals. This plasmonic enhancement is used to produce high efficiency THz photoconductive switches that combine the benefits of low-temperature grown GaAs while using mature 1.55 m femtosecond lasers operating with photon energy below the GaAs band-gap.

GRAPHENE-BASED BOLOMETER
20180356289 · 2018-12-13 ·

A bolometer. In one embodiment a graphene sheet is configured to absorb electromagnetic waves. The graphene sheet has two contacts connected to an amplifier, and a power detector connected to the amplifier. Electromagnetic power in the evanescent electromagnetic waves is absorbed in the graphene sheet, heating the graphene sheet. The power of Johnson noise generated at the contacts is proportional to the temperature of the graphene sheet. The Johnson noise is amplified and the power in the Johnson noise is used as a measure of the temperature of the graphene sheet, and of the amount of electromagnetic wave power absorbed by the graphene sheet.

HIGH TEMPERATURE NEAR-FIELD PROBE FOR SENSING AND ENERGY HARVESTING APPLICATIONS BASED UPON THERMAL EMISSION

A near-field probe (and associated method) compatible with near-infrared electromagnetic radiation and high temperature applications above 300?? C. (or 500? C. in some applications) includes an optical waveguide and a photonic thermal emitting structure comprising a near-field thermally emissive material coupled to or part of the optical waveguide. The photonic thermal emitting structure is structured and configured to emit near-field energy responsive to at least one environmental parameter of interest, and the near-field probe is structured and configured to enable extraction of the near-field energy to a far-field by coupling the near-field energy into one or more guided modes of the optical waveguide.

THz BOLOMETER DETECTOR

A THz bolometer detector includes a directional antenna 1 that receives a THz wave having a wavelength and radiates the received THz wave, a reception antenna 2 that is provided so as to face the directional antenna 1, and a bolometer 4 that detects heat generation due to a current flowing in the reception antenna 2. The directional antenna 1 overlaps the reception antenna 2 in plan view, and a longitudinal length of the directional antenna 1 is set to be less than a longitudinal length of the reception antenna 2.