Described herein is a detector for detecting optical radiation, especially within the infrared spectral range, specifically with regard to sensing at least one of transmissivity, absorption, emission and reflectivity, being capable of avoiding or diminishing a cross detection between sensor areas, specifically between adjacent sensor areas, thus, avoiding or diminishing a deterioration of a measurement based on the at least one sensor signal.

A method using capillary force lamination (CFL) for manufacturing a high-performance optical absorber, includes: texturizing a base layer of the high-performance optical absorber, the base layer comprising one or more of a polymer film and a polymer coating; joining a surface layer of the high-performance optical absorber to the base layer, the surface layer comprising a non-woven carbon nanotube (CNT) sheet; wetting the joined surface layer and base layer with a solvent; drying the joined surface layer and base layer; and treating the resulting base layer with plasma, creating the high-performance optical absorber.

An infrared detector includes a substrate in which a void is formed, a micro-resonator suspended over the void, an infrared absorber on an upper surface of the micro-resonator, a thermal isolation bridge supporting the micro-resonator, a first waveguide optically coupled with the micro-resonator, a second waveguide intersecting the first waveguide and optically coupled with the micro-resonator, a light source optically coupled with the first waveguide, and a photodetector optically coupled with the second waveguide.

Microbolometer detectors and arrays fabricated using printed electronics and photonics techniques, including ink-based printing, are disclosed. A microbolometer detector can include a substrate, a platform suspended above the substrate, and a thermistor printed on the platform and made of a thermistor material including an electrically conducting polymer, for example a poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) polymeric composition. The microbolometer detector can also include an electrode structure electrically connected to the thermistor, and an ohmic contact layer interposed between the thermistor and the electrode structure. The electrode structure can be made of an electrode material including silver, while the ohmic contact layer can be made of an ohmic contact material including a PEDOT-carbon nanotube polymeric composition. A microbolometer array can include a plurality of microbolometer detectors arranged in a linear or two-dimensional matrix.

Provided is a method of calibrating a microwave radiometer, which eliminates use of liquid nitrogen as a calibration source. The method is applied to a microwave radiometer configured to receive, by a receiver having a primary radiator connected thereto, a radio wave emitted from an object to be measured depending on a temperature of the object to be measured and to measure a brightness temperature of the object to be measured from an output signal of the receiver. In the method, the method a noise temperature T.sub.rx of the receiver appearing on an output side of the receiver is calibrated by observing a plurality of calibration sources having known brightness temperatures. The method includes using a radio wave reflector configured to totally reflect noise radiated from an input side of the receiver as one of the plurality of calibration sources.

A thermal processing apparatus according to the present invention includes: a support including quartz and being for supporting a substrate from a first side within a chamber; a flash lamp disposed on a second side and being for heating the substrate by irradiating the substrate with a flash of light; a continuous illumination lamp disposed on the second side of the substrate and being for continuously heating the substrate; a light blocking member disposed to surround the substrate in plan view; and a radiation thermometer disposed on the first side of the substrate and being for measuring a temperature of the substrate, wherein the radiation thermometer measures the temperature of the substrate by receiving light at a wavelength capable of being transmitted through the support. Accuracy of measurement of the temperature of the substrate can thereby be increased.

A method for forming a detection structure for detecting electromagnetic radiation includes an MOS transistor as a transducer. The method is based on the use of lateral extension elements as a doping mask for the semiconductor layer of the transistor and an etching mask for the same semiconductor layer, in order to provide contact portions of a drain and a source of the transistor.

A photosensor including: a first electrode; a second electrode; a photoelectric conversion layer between the first electrode and the second electrode; a first charge blocking layer between the first electrode and the photoelectric conversion layer; a second charge blocking layer between the second electrode and the photoelectric conversion layer; a voltage supply circuit supplying a voltage to the second electrode such that an electric field directed from the second electrode toward the first electrode is generated in the photoelectric conversion layer; and a transistor. The first charge blocking layer suppresses movement of holes from the photoelectric conversion layer to the first electrode and movement of electrons from the first electrode to the photoelectric conversion layer, and the second charge blocking layer suppresses movement of electrons from the photoelectric conversion layer to the second electrode and movement of holes from the second electrode to the photoelectric conversion layer.

The invention concerns an electromagnetic radiation detection structure (10) comprising at least one absorbing element defining an absorption plane, and a MOSFET transistor (100). The transistor comprises: at least one first and at least one second zone (111, 112) of a first type of conductivity; at least one third zone (113) separating the first and second zones (111, 112) from each other; and a gate electrode. The first zone (111), the third zone (113) and the second zone (112) are formed respectively by a first, a third and a second layer that extend in the absorption plane parallel to each other and are arranged one after another in a direction perpendicular to the absorption plane. The gate electrode covers the third zone (113) along at least one lateral wall of said third zone (113).

A high-performance optical absorber includes: a texturized base layer, the base layer comprising one or more of a polymer film and a polymer coating; and a surface layer located above and immediately adjacent to the base layer, the surface layer joined to the base layer, the surface layer comprising a plasma-functionalized, non-woven carbon nanotube (CNT) sheet. A method using capillary force lamination (CFL) for manufacturing a high-performance optical absorber, includes: texturizing a base layer of the high-performance optical absorber, the base layer comprising one or more of a polymer film and a polymer coating; joining a surface layer of the high-performance optical absorber to the base layer, the surface layer comprising a non-woven carbon nanotube (CNT) sheet; wetting the joined surface layer and base layer with a solvent; drying the joined surface layer and base layer; and treating the resulting base layer with plasma, creating the high-performance optical absorber.