Systems, methods, and apparatuses for providing on-board electromagnetic radiation sensing using beam splitting in a radiation sensing apparatus. The radiation sensing apparatuses can include a micro-mirror chip including a plurality of light reflecting surfaces. The apparatuses can also include an image sensor including an imaging surface. The apparatuses can also include a beamsplitter unit located between the micro-mirror chip and the image sensor. The beamsplitter unit can include a beamsplitter that includes a partially-reflective surface that is oblique to the imaging surface and the micro-mirror chip. The apparatuses can also include an enclosure configured to enclose at least the beamsplitter and a light source. With the apparatuses, the light source can be attached to a printed circuit board (PCB). Also, the enclosure can include an inner surface that has an angled reflective surface that is configured to reflect light from the light source in a direction towards the beamsplitter.

A microelectromechanical (MEMS) interferometer is provided. The MEMS interferometer includes a pair of movable mirrors that are positioned along perpendicular axes, wherein each of the pair of movable mirrors is coupled to a mechanism. The mechanism includes an electrostatic actuator driving a displacement amplification mechanism, and the displacement amplification mechanism driving each of the pair of the movable mirrors. The MEMS interferometer includes a beam splitter that is positioned at an intersection of the perpendicular axes extending through each movable mirror and the beam splitter. The MEMS interferometer also includes a metasurface microbolometer placed in line with the beam splitter to measure an intensity of a recombined beam from the pair of movable mirrors.

An infrared sensor module and a forehead thermometer are provided. The infrared sensor module includes a light guide structure and an infrared sensor element. An annular hollow space is formed inside the light guide structure and passes therethrough. A first and second opening is formed on two opposite sides of the light guide structure, respectively. A diameter of the first opening is greater than a diameter of the second opening. The annular hollow space includes a matte and reflective area, the matte area has serration portions, and each of the serration portions extends from the first opening to the second opening and is arranged parallel to each other. The reflective area is formed between the second opening and the matte area. The infrared sensor element is disposed at the second opening. The forehead thermometer includes a casing, a circuit board, the infrared sensor module, and an operating switch.

Embodiments of the present invention relate to an optical detector system capable of detecting in the infrared and terahertz regions of the electromagnetic spectrum with increased sensitivity and simplicity. It includes microbolometers in an array, a waveguide for receiving readout light input from an optical light source, waveguide splitters for splitting the waveguide to output waveguides such that each microbolometer in the array is optically coupled to an output waveguide. The output waveguide is coupled to an optical resonator of the microbolometer at a resonance frequency to generate a readout light output having a characteristic based on a change in a characteristic of the optical resonator. The system further includes a detector for receiving the readout light output from each of the output waveguides to convert the readout light output to an electrical signal.

Provided is an infrared detecting device with a high SNR. The infrared detecting device includes: a semiconductor substrate 10; a first layer 21 having a first conductivity type on the semiconductor substrate; a light receiving layer 22 on the first layer; and a second layer 23 having a second conductivity type on the light receiving layer. A part of the first layer, the light receiving layer, and the second layer form a mesa structure, the light receiving layer contains Al.sub.xIn.sub.1-xSb (0.05<x<0.18), and at least a part of side surfaces of the mesa structure are covered with a protective layer, and part of the protective layer that is in contact with side surfaces of the light receiving layer is made of silicon nitride.

One object of the present invention is to provide a bolometer with improved TCR. The present invention relates to a bolometer including two electrodes provided on a substrate and a bolometer film lying between the two electrodes to connect the two electrodes, wherein the bolometer film includes p-type semiconducting carbon nanotubes, and contact sites of the two electrodes with the bolometer film each consist only of a monometal or alloy having higher work function than the p-type semiconducting carbon nanotubes, or the proportion of a monometal or alloy having lower work function than the p-type semiconducting carbon nanotubes in metals constituting the contact sites of the two electrodes with the bolometer film is 10% by mass or less, or the contact area of a monometal or alloy having lower work function than the p-type semiconducting carbon nanotubes with the bolometer film is 10% or less of the total contact area between the electrodes and the bolometer film.

A high-performance optical absorber, having a texturized base layer, the base layer comprising one or more of a polymer film and a polymer coating; and a surface layer located above and immediately adjacent to the base layer. The surface layer is joined to the base layer and the surface layer has a plasma-functionalized, non-woven carbon nanotube (CNT) sheet, wherein the base layer texturization comprises one or more of substantially rectangular ridges, substantially triangular ridges, substantially pyramidal ridges, and truncated, substantially pyramidal ridges.

Systems, methods, and apparatuses for providing electromagnetic radiation sensing using sequential beam splitting. The apparatuses can include a micro-mirror chip having a plurality of light reflecting surfaces, an image sensor having an imaging surface, and a beamsplitter unit located between the micro-mirror chip and the image sensor. The beamsplitter unit includes a plurality of beamsplitters aligned along a horizontal axis that is parallel to the micro-mirror chip and the imaging surface. The beamsplitters implement the sequential beam splitting. Because of the structure of the beamsplitter unit, the height of the arrangement of the micro-mirror chip, the beamsplitter unit, and the image sensor is reduced such that the arrangement can fit within a mobile device. Within a mobile device, the apparatuses can be utilized for human detection, fire detection, gas detection, temperature measurements, environmental monitoring, energy saving, behavior analysis, surveillance, information gathering and for human-machine interfaces.

The present disclosure discloses an infrared sensor structure, comprises a cantilever switch array, the cantilever switch array comprises cantilever switches, and each cantilever switch comprises a cantilever beam and a switch corresponding to the cantilever beam, vertical heights from the cantilever beams to the switches in different cantilever switches are different from each other, when the cantilever beams are deformed towards the switches and connect to the switches, the switches turn on; wherein, deformations of different cantilever beams produced by absorbing infrared signal are different from each other, the intensity of the infrared signal can be quantified by number of the switches on, so as to realize detection of the infrared signal. The manufacturing of the infrared sensor structure in the present disclosure can be compatible with the existing semiconductor CMOS process.

Described herein is a sensor in chip scale package form factor. For example, a non-vacuum packaged sensor chip described herein includes a substrate, and a sensing element arranged on the substrate. The sensing element is configured to change resistance with temperature. Additionally, the non-vacuum packaged sensor chip includes an absorbing layer configured to absorb middle infrared (“MIR”) radiation.