An infrared detector and an infrared sensor including the infrared detector are provided. The infrared detector includes a plurality of quantum dots spaced apart from each other and including a first component, a first semiconductor layer covering the plurality of quantum dots, and a second semiconductor layer covering the first semiconductor layer.

Apparatuses and methods for in-situ temperature measurement of a process chamber are described herein. A process chamber includes an infrared (IR) sensor mounted to the chamber wall. The IR sensor is mounted such that it can be oriented to receive an IR wave from targets within the process chamber through a view port in the chamber wall to detect a temperature of a surface inside the chamber, or to receive an IR wave from a target outside of the process chamber to detect an atmospheric temperature or a temperature of an exterior surface of the process chamber. As the orientation of the IR sensor is controllable to receive the IR wave from selected directions, it may be used to detect the temperature of various targets inside and outside the process chamber. The obtained temperature information is useful to improve overall chamber matching, processing throughput, and uniformity.

Bolometers and methods of forming the same are provided. A bolometer that includes a substrate, a support structure comprising at least one SiGe layer and at least one Si layer, an absorber comprising reduced graphene oxide, and a thermistor comprising partially reduced graphene oxide are described. Also described are methods for forming bolometers and the parts contained therein.

Provided is a method of calibrating a microwave radiometer, which eliminates use of liquid nitrogen as a calibration source. The method is applied to a microwave radiometer configured to receive, by a receiver having a primary radiator connected thereto, a radio wave emitted from an object to be measured depending on a temperature of the object to be measured and to measure a brightness temperature of the object to be measured from an output signal of the receiver. In the method, the method a noise temperature T.sub.rx of the receiver appearing on an output side of the receiver is calibrated by observing a plurality of calibration sources having known brightness temperatures. The method includes using a radio wave reflector configured to totally reflect noise radiated from an input side of the receiver as one of the plurality of calibration sources.

Disclosed is a flexible display device including: a housing comprising an accommodating chamber, a first opening is formed at one end of accommodating chamber; a flexible display screen accommodated in the accommodating chamber, the flexible display screen includes a substrate, a first infrared receiving circuit formed on one side of the substrate, and an anode formed on a side of the first infrared receiving circuit away from the substrate; a hole through are formed on the anode, orthographic projections of the hole, onto the substrate cover an orthographic projection of the first infrared receiving circuit onto the substrate; an infrared transmitting circuit arranged in the first opening; a reel is arranged in the accommodating chamber; a control circuit signal-connected with the first infrared receiving circuit.

An object is to provide an infrared sensor with a quantum dot optimized. The present invention provides an infrared sensor (1) including a light absorption layer (5) that absorbs an infrared ray, wherein the light absorption layer includes a plurality of spherical quantum dots (21). Alternatively, the present invention provides an infrared sensor including a light absorption layer that absorbs an infrared ray, wherein the light absorption layer includes a plurality of quantum dots and the quantum dot includes at least one kind of PbS, PbSe, CdHgTe, Ag.sub.2S, Ag.sub.2Se, Ag.sub.2Te, AgInSe.sub.2, AgInTe.sub.2, CuInSe.sub.2, CuInTe.sub.2, and InAs.

A differential nondispersive infrared (NDIR) sensor incorporates an infrared (IR) chopper and multiple multi-bit digital registers to store and compare parameter ratio values, as may be digitally calibrated to corresponding temperature values, from chopper clock cycle portions in which a plasmonic MEMS detector is irradiated by the IR chopper with such values from chopper clock cycle portions in which the IR detector is not irradiated by the IR chopper. The plasmonic MEMS detector is referenced to a reference MEMS device via a parameter-ratio engine. The reference device can include a broadband IR reflector or can have a lower-absorption metasurface pattern giving it a lower quality factor than the plasmonic detector. The resultant enhancements to accuracy and precision of the NDIR sensor enable it to be used as a sub-parts-per-million gas concentration sensor or gas detector having laboratory, commercial, in-home, and battlefield applications.

Improved techniques for infrared imaging and gas detection are provided. In one example, a system includes a sensor array configured to receive infrared radiation from a scene comprising a background portion and a gas. The sensor array includes a first set of infrared sensors configured with a first spectral response corresponding to a first wavelength range of the infrared radiation associated with the background portion. The sensor array also includes a second set of infrared sensors configured with a second spectral response corresponding to a second wavelength range of the infrared radiation associated with the gas. The system also includes a read out integrated circuit (ROIC) configured to provide pixel values for first and second images captured by the first and second sets of infrared sensors, respectively, in response to the received infrared radiation. Additional systems and methods are also provided.

A thermal infrared imaging element includes: a pixel array unit (100) that includes a plurality of temperature detection pixels (3) each of which includes a diode (1) and generates an electric signal in accordance with infrared rays received from an outside, the temperature detection pixels being arrayed in a two-dimensional fashion in a row and column directions; a plurality of drive lines (12) that are provided in rows and that commonly connect one ends of the temperature detection pixels (3) in units of the rows; a plurality of signal lines (13) that are provided in columns and that commonly connect the other ends of the temperature detection pixels (3) in units of the columns; a vertical scanning circuit (4) that sequentially selects the drive lines; a signal line selection circuit (6) that sequentially selects the signal lines; and one or more read circuits (7) that amplify an electric signal from a temperature detection pixel connected to both one of the drive lines which is selected by the vertical scanning circuit and one of the signal lines which is selected by the signal line selection circuit. The number of the read circuits (7) is smaller than the number of the signal lines provided in the respective columns.

A metasurface integrated microbolometer having a sensing layer (e.g., Si.sub.xGe.sub.yO.sub.1-x-y). The presence of the metasurface provides selectivity with respect to wavelength, polarization and angle-of-incidence. The presence of the metasurface into the microbolometer affects conversion of electromagnetic to thermal energy, thermal response, electrical integration of the microbolometer, and the tradeoff between resistivity and temperature coefficient of resistance, thereby allowing the ability to obtain a sensing with high temperature coefficient of resistance with lower resistivity values than that of films without the metasurface. The presence of the metasurface removes the need for a Fabry-Perot cavity.