A terahertz sensor based on a dielectric metasurface, including a sensing element, and a thermosensitive circuit connected to the sensing element. The sensing element is composed of a cylindrical semiconductor doped with a conductive material. The conductive material is configured to change conductivity of the cylindrical semiconductor to enable the cylindrical semiconductor to absorb electromagnetic waves in terahertz region.

A method for making an infrared light absorber is provided, and the method includes following steps: providing a first carbon nanotube array on a substrate; truncating the carbon nanotube array by irradiating a top surface of the carbon nanotube array by a laser beam in two directions, the top surface being away from the substrate, wherein the two directions being at an angle, the angle is in a range of 30 degrees to 90 degrees.

An electromagnetic wave sensor 1 has electromagnetic wave absorbers disposed side by side in first and second directions, temperature detection portions held by the respective electromagnetic wave absorbers and sets of two arm portions connected to each electromagnetic wave absorber at two connection portions. In a plan view, the arm portions have two first extending portions extending from the connection portions in directions of which components in the second direction are opposite to each other, and two second extending portions extending from the first extending portions in directions of which components in the first direction are opposite to each other. Four sides of a rectangle circumscribing each of the electromagnetic wave absorbers with a smallest area are inclined with respect to the first direction in directions in which each electromagnetic wave absorber is away from the second extending portions with the connection portions as fulcrums.

An electromagnetic wave sensor has electromagnetic wave absorbers disposed side by side in first and second directions, temperature detection portions held by the respective electromagnetic wave absorbers and sets of two arm portions connected to each of the electromagnetic wave absorbers at two connection portions. In a plan view, the arm portions have two first extending portions extending from the connection portions in directions of which components in the second direction are opposite to each other, and two second extending portions extending from the first extending portions in directions of which components in the first direction are opposite to each other. Four sides of a rectangle circumscribing each of the electromagnetic wave absorbers with a smallest area are inclined with respect to the first direction in directions in which each of the electromagnetic wave absorbers approaches the second extending portions with the connection portions as fulcrums.

A detector of electromagnetic radiation (RL) is described. The detector comprises: an oriented polycrystalline layer (2) of thermoelectric material, a substrate (1) superimposed on the top surface of the oriented polycrystalline layer so that the back surface (10) is in contact with the oriented polycrystalline layer, first and second electrodes spaced the one from the other and in electrical contact with the oriented polycrystalline layer. The substrate comprises at least one ceramic layer and the oriented polycrystalline layer has a crystal orientation at an angle comprised between 30 degrees and 55 degrees relative to a normal to the top surface of the substrate.

Techniques are disclosed for facilitating image relay for wearable devices with thermal imaging devices attached thereto. In one example, a system includes an attachment configured to releasably couple to an exterior surface of a wearable apparatus. The attachment includes an infrared sensor assembly configured to capture a thermal image of a scene. The attachment further includes a display component configured to provide data indicative of the thermal image. The system further includes an optical relay component configured to couple to an interior surface of the wearable apparatus. The optical relay component is further configured to receive the data from the display component and relay the data within the wearable apparatus to facilitate presenting the data for viewing by a user while wearing the wearable apparatus. Related devices and methods are also provided.

An infrared image sensor includes a first integrate circuit (IC), a bolometer disposed on or above one surface of the first IC configured to detect infrared rays passing through a lens module, a via electrically connecting the first IC and the bolometer, and a reflective layer disposed between the first IC and the bolometer, wherein the first IC includes at least one of a read-out (RO) element configured to perform analog processing for the bolometer to generate infrared sensing information and an image signal process (ISP) element configured to perform digital processing based on the bolometer to generate infrared image information, and at least one of an autofocusing (AF) control element and an optical image stabilization (OIS) control element configured to adjust a positional relationship between the lens module and the bolometer.

A method of making a light converting optical system comprising providing a first optical layer, a thin sheet of reflective light scattering material, a light source, a second optical layer approximately coextensive with the first optical layer, a continuous broad-area photoabsorptive film layer approximately coextensive with the first optical layer, positioning the thin sheet of reflective light scattering material parallel to the first optical layer, positioning the continuous broad-area photoabsorptive film layer between and parallel to the first optical layer and the thin sheet of reflective material, and positioning the second optical layer on a light path between the light source and the continuous broad-area photoabsorptive film layer. The first optical layer has a microstructured broad-area front surface comprising an array of linear grooves disposed side by side and extending along a straight line between two edges of the layer.

A photonic bolometer includes: a photonic chip; a weak thermal link; a thermally-isolated member, and the weak thermal link thermally isolates the thermally-isolated member from the photonic chip; a photonic temperature sensor; a chip waveguide in optical communication with the photonic temperature sensor; and a photon absorber that receives incident radiation light, increases temperature due to absorption of the incident radiation light, heats the photonic temperature sensor in response to receipt of the incident radiation light, and changes the resonance frequency of the photonic temperature sensor in response to receiving the incident radiation light.

A long-wave infrared detecting element includes a magnetic field generator configured to generate a magnetic field; a substrate on the magnetic field generator; a superparamagnetic material layer disposed to be separated from the substrate and magnetized by the magnetic field generated by the magnetic field generator; a support unit on the substrate to support the superparamagnetic material layer such that the superparamagnetic material layer separated from the substrate, such that the support unit and the superparamagnetic material layer generate heat by absorbing infrared radiation from the outside; and a magneto-electric conversion unit that generates an electrical signal proportional to both a strength of the magnetic field generated by the magnetic field generator and the magnetization of the superparamagnetic material layer.