A light converting optical system employing a planar light trapping optical structure illuminated by a source of monochromatic light. The light trapping optical structure includes a photoresponsive layer including quantum dots. The photoresponsive layer is configured at a relatively low thickness and located between opposing broad-area reflective surfaces that confine and redistribute light within the light trapping structure, causing multiple transverse propagation of light through the photoresponsive layer and enhanced absorption and light conversion. The light trapping optical structure further incorporates optical elements located on a light path between the light source and the photoresponsive layer.

An optical sensor including: a semiconductor layer including a source region and a drain region; a gate electrode facing a region between the source region and the drain region; a photoelectric conversion layer between the region and the gate electrode; and a first transistor having a first gate coupled to one of the source region and the drain region.

A sensor and method for measuring respiratory gas properties are presented. A thermal conductivity sensor is used to measure the thermal conductivity of a gas with unknown composition and/or mass flow rate at different temperatures. The measured thermal conductivities at different temperatures are compared with known thermal conductivities of gases at different temperatures. In an exemplary application the sensor and method are installed in a tube to determine a mass of respiratory air flowing through the tube and a concentration of CO.sub.2 therein.

A photodiode comprising a photoactive spinel oxide layer is described. This photoactive spinel oxide layer forms a contact with both a light absorption layer of quantum dots, quantum wires, or quantum rods, and an inorganic substrate layer. In some embodiments, the inorganic substrate layer and the photoactive spinel oxide layer form an isotype junction. Methods of characterizing the photodiode are provided and demonstrate commercially relevant electrical and optoelectronic properties, particularly the ability to operate as a photodetector with a high photosensitivity. An economical process for preparing the photodiode is provided as well as applications.

A photodiode comprising a photoactive spinel oxide layer is described. This photoactive spinel oxide layer forms a contact with both a light absorption layer of quantum dots, quantum wires, or quantum rods, and an inorganic substrate layer. In some embodiments, the inorganic substrate layer and the photoactive spinel oxide layer form an isotype junction. Methods of characterizing the photodiode are provided and demonstrate commercially relevant electrical and optoelectronic properties, particularly the ability to operate as a photodetector with a high photosensitivity. An economical process for preparing the photodiode is provided as well as applications.

An infrared detection element includes a pyroelectric body, first and second light receiving electrodes, and blackened films. The first light receiving electrode is provided on a surface of the pyroelectric body and receives infrared light from a first region. The second light receiving electrode is provided on a surface of the pyroelectric body and receives infrared light from a second region. The blackened films are provided on a surface of the first light receiving electrode and are not provided on a surface of the light second receiving electrode. Thus, infrared reception sensitivity is different between the first light receiving electrode and the second light receiving electrode.

The present invention provides an infrared detector pixel structure and manufacturing method thereof. The bottom portion of a silicon substrate is bonded with a bonding substrate, an infrared absorbing layer in the bonding substrate is used for absorbing a part of infrared light, a closed cavity filled with infrared-sensitive gas is set in the silicon substrate, and a piezoelectric transforming unit is bonded onto the closed cavity. When the infrared-sensitive gas absorbs the infrared light to expand, the infrared sensitive gas will press the piezoelectric transforming unit, which causes piezoelectric signal generated by the piezoelectric transforming unit to be changed, thereby achieving the detection on the infrared light.

A far infrared imaging system includes a first far infrared polarized light generator, a second far infrared polarized light generator, a first receiving device, a second receiving device, and a computer. The first far infrared polarized light generator emits a first far infrared polarized light, and the second far infrared polarized light generator emits a second far infrared polarized light. The first receiving device receives a first far infrared reflected polarized light, and the second receiving device receives a second far infrared reflected polarized light. The computer processes information received by the first receiver and the second receiver. The polarizer of the first far infrared polarized light generator and the second far infrared polarized light generator includes a carbon nanotube structure including a plurality of carbon nanotubes arranged substantially along the same direction.

Embodiments relate generally to electromagnetic radiation detector devices, systems, and methods using a planar Golay cell. A method for gas detection may comprise providing a gas sealed in a cavity of a gas detector; directing radiative power from a light source through one or more target gases and through a cell body of the gas detector toward the cavity and a wavelength selective absorber of the gas detector, wherein the one or more target gases are located between the light source and the cavity; setting wavelength sensitivity with the wavelength selective absorber, wherein the wavelength sensitivity is irrespective of an angle of incidence (?); absorbing the radiative power by the wavelength selective absorber and by the one or more target gases; detecting, by a pressure sensing element, a pressure change caused by the absorbing of the radiative power; and determining the one or more target gases based on the detected pressure change.

Systems, methods, and apparatuses for providing electromagnetic radiation sensing using sequential beam splitting. The apparatuses can include a micro-mirror chip having a plurality of light reflecting surfaces, an image sensor having an imaging surface, and a beamsplitter unit located between the micro-mirror chip and the image sensor. The beamsplitter unit includes a plurality of beamsplitters aligned along a horizontal axis that is parallel to the micro-mirror chip and the imaging surface. The beamsplitters implement the sequential beam splitting. Because of the structure of the beamsplitter unit, the height of the arrangement of the micro-mirror chip, the beamsplitter unit, and the image sensor is reduced such that the arrangement can fit within a mobile device. Within a mobile device, the apparatuses can be utilized for human detection, fire detection, gas detection, temperature measurements, environmental monitoring, energy saving, behavior analysis, surveillance, information gathering and for human-machine interfaces.