Connection with a wiring structure can be reliably achieved, whereby a semiconductor sensor device and a semiconductor sensor device manufacturing method with increased reliability are provided. A semiconductor sensor device in which a multiple of signal lines and a sensor detection portion are disposed includes a conductive film, disposed on a substrate, that configures the signal lines and whose upper face is exposed by an aperture portion of a width smaller than a width of the signal lines, a conductive member formed on the conductive film and electrically connected to the conductive film via the aperture portion, and a wiring structure, formed on an upper face of the conductive member, of an air bridge structure that connects the signal lines or the signal lines and the sensor detection portion, wherein an upper surface of the conductive member is in contact with the wiring structure, and a side face is exposed.

An imager pixel comprising a micro-platform supported by phononic nanowires, the nanowires providing an extreme-level of thermal isolation from a surrounding substrate. The micro-platform in embodiments comprises thermal sensors sensitive to heat from absorbed incident longwave/shortwave photonic irradiation. In embodiments, the pixel photonic sensing structure comprises both a thermal sensor together with a separate photodiode/phototransistor/photogate for sensing RGB and NIR wavelengths. Some embodiments comprise a micro-platform with an integral Peltier thermoelectric element permitting in situ refrigeration to cryogenic temperatures.

A multispectral or thermal imager comprising a lens assembly, an array of IC, chips that is arranged in a field of view of the lens assembly, each IC chip comprising an array of thermopile devices, and a filter assembly comprising one or more wavelength filters. The filter assembly comprises a respective wavelength filter for at least one of the three or more rows of IC chips. At least one wavelength filter is one of the three or more rows of IC chips. At least one wavelength filter is transparent in a portion of a wavelength range that passes through the lens assembly. The filter assembly is configured such that radiation of the same wavelength range passes to the rows of IC chips in the pair of non-adjacent rows, and such that the wavelength range that passes to the rows in the pair of non-adjacent rows is different from a wavelength range that passes to the one or more rows other than the pair of non-adjacent rows.

A sensor includes: a substrate and at least one infrared temperature measurement unit disposed on the substrate. An infrared temperature measurement sub-unit includes: a first support portion, at least one second support portion, a thermocouple, and an infrared absorption portion. The thermocouple includes a first electrode and a second electrode, each of which includes a first end and a second end; the first ends of the first electrode and the second electrode are connected and disposed on the first support portion; the infrared absorption portion is disposed on the first support portion and covers the first ends of the first electrode and the second electrode; the second ends of the first electrode and the second electrode are not connected and disposed on the second support portion; and in the infrared temperature measurement unit, a cavity structure is included between at least the adjacent first and second support portions.

There is provided an auto detection system including a thermal detection device and a host. The host controls an indication device to indicate a prompt message or detection results according to a slope variation of voltage values or 2D distribution of temperature values detected by the thermal detection device, wherein the voltage values include the detected voltage of a single pixel or the sum of detected voltages of multiple pixels of a thermal sensor.

A thermal pixel configured as an electromagnetic emitter and/or an electromagnetic detector. The thermal pixel comprises a micro-platform suspended with semiconductor nanowires from a surrounding support platform. The nanowires comprise phononic structure providing a decrease in thermal conductivity. In some embodiments, the pixel is structured for operation within a broad bandwidth or a limited bandwidth. Metamaterial and/or photonic crystal filters provide pixel operation over a limited bandwidth. In some other embodiments, the micro-platform comprises a nanotube structure providing a broadband emission/absorption spectral response.

A detector of electromagnetic radiation (RL) is described. The detector comprises: an oriented polycrystalline layer (2) of thermoelectric material, a substrate (1) superimposed on the top surface of the oriented polycrystalline layer so that the back surface (10) is in contact with the oriented polycrystalline layer, first and second electrodes spaced the one from the other and in electrical contact with the oriented polycrystalline layer. The substrate comprises at least one ceramic layer and the oriented polycrystalline layer has a crystal orientation at an angle comprised between 30 degrees and 55 degrees relative to a normal to the top surface of the substrate.

A measurement system for a construction machine, in particular a road construction machine including a temperature measuring device and an evaluation device. The temperature measuring device is configured to determine a first surface temperature for a first area of a measuring field as well as a second surface temperature for a second area of the measuring field, the temperature measuring device being directed to a reference surface, in relation to which the construction machine is moving, and the measuring field being shifted as a function of a movement of the construction machine along the reference surface. The evaluation device is configured to determine a movement parameter by means of a shift in a first temperature zone, defined for a first point in time by the first surface temperature within the first area, in relation to the first and/or second area(s) or in relation to the measuring field.

A complementary metal oxide semiconductor (CMOS) device embedded with micro-electro-mechanical system (MEMS) components in a MEMS region. The MEMS components, for example, are infrared (IR) thermoconforms. The device is encapsulated with a CMOS compatible IR transparent cap to hermetically seal the MEMS sensors in the MEMS region. The CMOS cap includes a base cap with release openings and a seal cap which seals the release openings.

Device and method of forming the device are disclosed. The method includes providing a substrate prepared with a complementary metal oxide semiconductor (CMOS) region and a sensor region. A substrate cavity is formed in the substrate in the sensor region, the substrate cavity including cavity sidewalls and cavity bottom surface and a membrane which serves as a substrate cavity top surface. The cavity bottom surface includes a reflector. The method also includes forming CMOS devices in the CMOS region, forming a micro-electrical mechanical system (MEMS) component on the membrane, and forming a back-end-of-line (BEOL) dielectric disposed on the substrate having a plurality of interlayer dielectric (ILD) layers. The BEOL dielectric includes an opening to expose the MEMS component. The opening forms a BEOL cavity above the MEMS component.