A far infrared sensor package includes a package body and a plurality of far infrared sensor array integrated circuits. The plurality of far infrared sensor array integrated circuits are disposed on a same plane and inside the package body. Each of the far infrared sensor array integrated circuits includes a far infrared sensing element array of a same size.

Imaging devices including dielectric metamaterial absorbers and related methods are disclosed. According to an aspect, an imaging device includes a support. The imaging device also includes multiple dielectric metamaterial absorbers attached to the support. Each absorber includes one or more dielectric resonators configured to generate and emit thermal heat upon receipt of electromagnetic energy.

A communication apparatus includes a first antenna array with plurality of antenna elements multiple antenna elements and first plurality of thermoelectric devices distributed across the plurality of antenna elements. An activation or a deactivation of each thermoelectric device is executed in a real-time or near real-time based on an operational state of each antenna element of the plurality of antenna elements and a performance state of the plurality of antenna elements, where the activation or the deactivation is performed in a defined delayed time after a defined time has elapsed from a start of operation of the first antenna array to mitigate performance degradation of the plurality of antenna elements when in operation. Adaptive cooling is applied by each thermoelectric device on different subsets of antenna elements such that performance breakdowns due to heating of a plurality of chips associated with the different subsets of antenna elements is reduced.

A thermoelectric conversion material is represented by a composition formula Ag.sub.2S.sub.(1-x)Se.sub.x. The value of x is not smaller than 0.2 and not greater than 0.95.

A multispectral or thermal imager comprising a lens assembly, an array of IC chips that is arranged in a field of view of the lens assembly, and a filter assembly comprising one or more wavelength filters. The filter assembly comprises a respective wavelength filter for at least one of the three or more rows of IC chips. At least one wavelength filter is transparent in a portion of a wavelength range that passes through the lens assembly. The filter assembly is configured such that radiation of the same wavelength range passes to the rows of IC chips in the pair of non-adjacent rows, and such that the wavelength range that passes to the rows in the pair of non-adjacent rows is different from a wavelength range that passes to the one or more rows other than the pair of non-adjacent rows.

A photosensor includes: a support; a thermoelectric conversion material section that is disposed on a first main surface of the support and that includes a plurality of first material layers each having an elongated shape, a plurality of second material layers each having electrical conductivity and an elongated shape, and an insulating film, the first material layers and the second material layers each being configured to convert thermal energy into electrical energy; a heat sink that is disposed on a second main surface of the support and along an outer edge of the support; a light-absorbing film that is disposed in a region surrounded by inner edges of the heat sink as viewed in a thickness direction of the support so as to form temperature differences on the first main surface of the support in longitudinal directions of the first material layers.

Device and method of forming a device are disclosed. The device includes a substrate with a transistor component disposed in a transistor region and a micro-electrical mechanical system (MEMS) component disposed on a membrane over a lower sensor cavity in a hybrid region. The MEMS component serves as thermoelectric-based infrared sensor, a thermopile line structure which includes an absorber layer disposed over a portion of oppositely doped first and second line segments. A back-end-of-line (BEOL) dielectric is disposed on the substrate having a plurality of inter layer dielectric (ILD) layers with metal and via levels. The ILD layers include metal lines and via contacts for interconnecting the components of the device. The metal lines in the metal levels are configured to define a BEOL or an upper sensor cavity over the lower sensor cavity, and metal lines of a first metal level of the BEOL dielectric are configured to define a geometry of the MEMS component.

The present disclosure provides a packaging method and a semiconductor device, the packaging method comprising: depositing a first sacrificial layer on a substrate to cover a semiconductor element formed on the substrate; covering a first dielectric layer on an upper surface and a side wall of the first sacrificial layer, the first dielectric layer has a first groove exposing part of the first sacrificial layer; covering a second sacrificial layer on surface of the exposed first sacrificial layer; covering a second dielectric layer on the second sacrificial layer and the exposed surface of the first dielectric layer, the second dielectric layer having a releasing hole exposing the second sacrificial layer and a second groove; depositing a filling layer to fill the second groove; by the releasing hole, removing the second sacrificial layer and the first sacrificial layer to form a cavity; depositing a third dielectric layer which covers the exposed surface of the second dielectric layer, and filling the releasing hole. According to the present application, a step of packaging using a conduit shell is removed, thereby reducing the packaging cost of the semiconductor element and improving the yield.

An infrared sensor is formed in such a manner that an infrared receiver and a base substrate are spaced with a beam made of a thin-film phononic crystal in which through holes are arranged periodically. The beam made of a phononic crystal is formed in such a manner that a period P of through holes increases at arbitrary intervals in a direction from the infrared receiver toward the base substrate.

A person support apparatus includes one or more thermal image sensors whose outputs are analyzed to perform one or more functions. Such functions include automatically turning on a brake, automatically turning on one or more lights, detecting when a patient associated with the person support apparatus has fallen, enabling a propulsion system of the patient support apparatus to be used, automatically controlling one or more environmental controls, and/or automatically arming an exit detection system after entry of a patient onto the person support apparatus. Multiple thermal images may be generated from multiple sensors to generate stereoscopic thermal images of portions of the person support apparatus and its surroundings.