A semiconductor material emitting device is positioned such that its output flux impinges on a substrate at a non-perpendicular angle, so as to grow a first epilayer which is linearly graded in the direction perpendicular to the growth direction. The linear grading can be arranged such that, for example, each row of pixels has a different cutoff wavelength, thereby making it possible to provide a spectroscopic FPA without the use of filters. The non-perpendicular angle and/or the flux intensity can be adjusted to achieve a desired compositional grading. A spectral ellipsometer may be used to monitor the composition of the epilayer during the fabrication process, and to control the intensity of the flux.

A microbolometer read-out circuit includes an extraction circuit configured to detect a voltage signal of a temperature variation; an analog-to-digital converter coupled to the extraction circuit and configured to digitalize the voltage signal of the temperature variation; an image processing circuit coupled to the analog-to-digital converter; and wherein the image processing circuit is coupled to a gain digital-to-analog converter and an offset digital-to-analog converter.

External biasing control unit for a reading circuit of an infrared photodetector element, the control unit being able to adopt: a first configuration wherein it sends a first set of biasing signals to a first stage of the reading circuit so that this first stage adopts a first operating mode corresponding to a first biasing mode of the photodetector, in particular a direct injection mode, a second configuration wherein it sends a second set of biasing signals to said first stage, the signals in the second set being designed so that said first stage adopts a second operating mode corresponding to a second biasing mode of the photodetector, in particular a buffer direct injection mode.

A multi-zone monitoring system is disclosed. The system includes a plurality of sensor modules configured to monitor conditions in a plurality of detection zones. The sensor modules include a combination of detection devices configured to detect different conditions based on a designated zone of each sensor module. The system further includes a reporting device in communication with each of the sensor modules. The reporting device is configured to report the status of each of the detection zones based on indications communicated via the detection devices in the corresponding detection zone.

A recessed carbon nanotube article includes a base; a substrate disposed on the base; wells disposed in the substrate and bounded by the base and a substrate wall; and a carbon nanotube element disposed in individual wells and including vertically aligned carbon nanotubes such that a longitudinal length of the vertically aligned carbon nanotubes is less than a depth of the well in which the carbon nanotube element is disposed. A recessed carbon nanotube bolometer includes a base; a substrate on the base; radiation wells in the substrate; carbon nanotubes in the wells; thermistors and heaters on the membrane arranged as an electrical substitution member. A process for making a recessed carbon nanotube bolometer includes forming a substrate on a base; forming a radiation well in the substrate; forming carbon nanotubes in the well; disposing a cover on the wells; and forming a thermistor and a heater on the base.

A bolometer pixel trigger including a substrate, a bolometer formed on the substrate, and a thermal-sensitive film trigger. The thermal-sensitive film trigger includes a resistive varying thermal-sensitive material configured to change resistance in response to a change in temperature thereof. The thermal-sensitive film trigger is configured such that current flow therethrough varies in response to changes in the resistance of the resistive varying thermal-sensitive material.

An electromagnetic wave detecting apparatus is provided with: a plurality of detecting devices each of which is configured to detect an electromagnetic wave; a voltage applying device configured to apply bias voltage to each of the plurality of detecting devices; an obtaining device configured to obtain a detection signal outputted from each of the plurality of detecting devices; and a setting device configured to set acquisition timing of the detection signal for each of the plurality of detecting devices, on the basis of the bias voltage, which is applied to each of the plurality of detecting devices, and the detection signal of each of the plurality of detecting devices.

The present invention relates to a metamaterial focal plane array for broad spectrum imaging. Electromagnetic energy in the form of light is absorbed in or on a metamaterial absorber and a subsequent hot carriers are collected either in a semiconductor space charge region (e.g. P-N junction), or in some other modern collection scheme. Following the accumulation of photogenerated charge (electrons or holes), the signal is then converted to a digital signal using conventional or slightly modified ROIC modules.

An infrared emitter is described. The infrared emitter comprises an infrared source, a housing, and infrared optics. The infrared source emits electromagnetic radiation with a peak intensity at a radiation wavelength within the range of 2 to 15 microns. The housing has an aperture, and is arranged to house the infrared source. The infrared optics is arranged to direct the electromagnetic radiation emitted from the infrared source through the aperture to outside the housing.

A bolometer pixel trigger array includes a substrate, an electrically conductive contact pad formed on the substrate, and bolometer formed on the substrate. The bolometer includes at least one thermally conductive trigger arm having a fixed end coupled to a portion of the bolometer and an electrically conductive free end configured to deflect with respect to the fixed end. At least one trigger arm establishes different operating states of the bolometer pixel trigger in response to the at least one trigger arm realizing different temperatures. The different operating states are configured to change an electrical connection between the at least one trigger arm and the contact pad.