Techniques for facilitating uncertainty gauging for imaging systems and methods are provided. In one example, a method includes determining temperature data associated with infrared image data of a scene. The method further includes receiving at least one parameter associated with the infrared image data. The method further includes determining an uncertainty factor associated with the temperature data based on the at least one parameter. Related devices and systems are also provided.

A thermistor element includes a thermistor film, a first electrode provided in contact with one surface of the thermistor film, and a pair of second electrodes provided in contact with the other surface of the thermistor film, wherein the thermistor film includes an oxide having a spinel crystal structure and having a [111] preferred orientation in a film thickness direction.

A sensing element of an infrared detector including a first absorber configured to form a first set of minority carriers upon receipt of an infrared flux, a collector, a first barrier disposed between the first absorber and the collector, a second absorber configured to form a second set of minority carriers upon receipt of the infrared flux, and a second barrier disposed between the second absorber and the collector. In response to a voltage being applied to the collector, the first and second set of minority carriers are collected at the collector.

A microbolometer for measuring thermal radiation comprises an electrical circuit on a perforated plastic substrate. The electrical circuit comprises at least one thermistor having a temperature dependent electric resistance, wherein the thermistor is arranged to receive the thermal radiation for changing its temperature depending on a flux of the received thermal radiation. The electrical circuit is configured to measure the electric resistance of the thermistor for calculating the thermal radiation. The microbolometer is configured to cause a gas flow through the perforations for improving thermal characteristics.

The present disclosure provided an infrared detector having a vertical sidewall sensitive layer and a manufacturing method thereof. By forming at least one fin structure on a semiconductor substrate; and a sensitive layer can be formed on the sidewall of the fin structure by ion implantation. The vertical sidewall sensitive layer is configured to reduce the impact of lithography on the sensitive layer, thereby reducing the impact on the sensitivity of the sensitive layer (03).

An example object of the present invention is to provide a bolometer-type detector capable of reducing heat transfer between pixels. A bolometer-type detector according to an example aspect of the present invention includes a plurality of pixels, and at least includes: a substrate, a heat insulating layer provided on the substrate, bolometer films provided on individual pixels on the heat insulating layer, and a wiring for signal output connected to contact electrodes provided in contact with the bolometer films, wherein the wiring for signal output is disposed in a layer different from the bolometer films, and the heat insulating layer between adjacent pixels is removed at least partially in the depth direction and in a region of a length of 50% or longer and a width of 100 nm or wider of a closed curve that surrounds each bolometer film.

An infrared sensor includes a substrate, an active pixel array, a reference pixel array, a light absorbing layer, a sidewall spacer, and a shading layer. The active pixel array is over the substrate. The reference pixel is over the substrate, adjacent to the active pixel array, and having a reference pixel. The reference pixel includes a platform, a resistor, and an infrared sensing material layer. The resistor is on the platform. The infrared sensing material layer is over the resistor. The light absorbing layer is over the reference pixel. The sidewall spacer is over the reference pixel and extends along a sidewall of the light absorbing layer. The shading layer is conformally formed over the light absorbing layer and the sidewall spacer.

Electromagnetic wave sensor (infrared sensor) 1 has: a first substrate; a second substrate that faces the first substrate and that allows infrared rays to pass through at least a part of the second substrate; first circumferential wall 4a that is positioned between the first substrate and the second substrate and that forms first space 8a together with the first and second substrates; bolometer structures 7 that are provided in first space 8a; first measuring element 9a that is provided in first space 8a and that is used for taking a first measurement relating to pressure P1 in first space 8a; and a monitoring portion. The monitoring portion acquires the first measurement that is taken using first measuring element 9a and outputs a predetermined signal indicating an abnormality based on at least the first measurement.

An image sensor includes on a support a plurality of first pixels and a plurality of second pixels intended to detect an infrared radiation emitted by an element of a scene. Each of the pixels includes a bolometric membrane suspended above a reflector covering the support, wherein the reflector of each of the first pixels is covered with a first dielectric layer, and the reflector of each of the second pixels is covered with a second dielectric layer differing from the first dielectric layer by its optical properties.

A system with a detector array, a processor unit and a signal interface. The detector array includes a plurality of bolometric measuring cells and a base body. Each measuring cell is configured to detect infrared radiation and to transmit a measurement signal, which is representative of the readings of the measuring cells, to the processor unit. The processor unit is configured to determine a body heat stored by the base body, to determine a predictive value compensated according to the time delay of the respective measuring cell for each current reading, to determine a temperature value corrected according to the measurement error for each current predictive value, and to determine a thermal image based on the current temperature values, allowing an image signal representing the thermal image to be sent from the signal interface. A corresponding method is also provided.