A superconductor device includes a barrier layer over a substrate including silicon, the barrier layer including silicon and nitrogen, and a seed layer for a superconductor layer over the barrier layer, the seed layer including aluminum and nitrogen, and superconductor layer over the seed layer, the superconductor layer including a layer of a superconductor material, the barrier layer serving as an oxidation barrier between the layer superconductor material and the substrate. In some embodiments, the superconductor device includes a waveguide and a metal contact at a sufficient distance from the waveguide to prevent optical coupling between the metal contact and the waveguide.

An infrared red (IR) detector includes a substrate configured to absorb IR energy, and at least one electrode pair comprising a superconducting material. The at least one electrode pair is arranged at an outer edge of the substrate. IR energy absorbed by the substrate diffuses toward the outer edge while dissipating as heat from a surface of the substrate, and the at least one electrode pair conducts the heat at the outer edge to facilitate measurement of the heat.

A method and a device for reducing the extrinsic dark count of a superconducting nanowire single photon detector (SNSPD), it comprises the steps of: integrating a multi-layer film filter on the superconducting nanowire single photon detector; the multi-layer film filter is a device implemented by a multi-layer dielectric film and having a band-pass filtering function. The extrinsic dark count is the dark count triggered by optical fiber blackbody radiance and external stray light. The superconducting nanowire single photon detector comprises: a substrate having an upper surface integrated with an upper anti-reflection layer and a lower surface integrated with a lower anti-reflection layer; an optical cavity structure; a superconducting nanowire; and a reflector. The present invention is easy to operate, and only needs to integrate the multi-layer film filter on the substrate of the SNSPD to filter non-signal radiation.

A superconductor device includes a barrier layer over a substrate including silicon, the barrier layer including silicon and nitrogen, and a seed layer for a superconductor layer over the barrier layer, the seed layer including aluminum and nitrogen, and superconductor layer over the seed layer, the superconductor layer including a layer of a superconductor material, the barrier layer serving as an oxidation barrier between the layer superconductor material and the substrate. In some embodiments, the superconductor device includes a waveguide and a metal contact at a sufficient distance from the waveguide to prevent optical coupling between the metal contact and the waveguide.

A device includes a substrate and a dielectric layer on the substrate. The device also includes a light sensitive component in the dielectric layer and a trench having a first portion disposed in the substrate and a second portion disposed in the dielectric layer. The trench is adjacent the light sensitive component and includes an adhesion layer in the first portion and the second portion, an optical isolation layer on the adhesion layer, and a first fill material in the first portion and a second fill material in the second portion. The first fill material is characterized by a first coefficient of thermal expansion (CTE) that matches a CTE of the substrate and the second fill material is characterized by a second CTE that matches a CTE of the dielectric layer.

A single photon detector based on the kinetic inductance of two-dimensional Van der Waals materials. In some embodiments, a system including such a detector includes: a resonator including a conductive path through a superconducting sheet, the superconducting sheet being composed of a Van der Waals material, the superconducting sheet being configured to absorb a photon, and in response to the absorption of the photon, to exhibit an increase in a kinetic inductance of the conductive path.

A tape includes a plurality of superconducting elements, such as pixels, distributed along a longitudinal direction of the tape. The tape has a size along a first dimension, such as a thickness, which is at least 10 times smaller, than a size along a second dimension, such as a width, and where the size along the second dimension, such as the width, is at least 10 times smaller, than a size along a third dimension, such as a length. There is also presented a use of the tape, a method of manufacture of the tape, and a bolometer and/or a kinetic inductance detector comprising the tape.

Disclosed in the present invention is a terahertz kinetic inductance bolometer, including a superconducting thin film layer, a terahertz antenna, a cutoff layer and a Si substrate, wherein the superconducting thin film layer and the terahertz antenna are respectively deposited on the cutoff layer, and the cutoff layer is deposited on the Si substrate; the superconducting thin film layer includes a superconducting feeder line, an inter-digital capacitor and an inductor coil; the inter-digital capacitor is connected with the inductor coil in parallel to form an oscillation circuit; the terahertz antenna is adjacent to the inductor coil and is used to convert a received terahertz signal into heat so that the inductor coil produces an inductance change; a resonance frequency in the inter-digital capacitor changes through the inductance change; and the superconducting feeder line receives the varying resonance frequency, through which an light intensity of the terahertz signal can be obtained to complete the detection of the terahertz signal. The terahertz kinetic inductance bolometer can detect the terahertz signal accurately and is less affected by the temperature. The present invention also provides a preparation method of the terahertz kinetic inductance bolometer and a terahertz detection system.