Patent classifications
G01J5/22
Computational Radiation Tolerance for High Quality Infrared Focal Plane Arrays
An imaging system includes a focal plane array, readout electronics, and a computing system in which the number of active pixels is either set at a low-fraction of the total pixels thereby reducing the effect of radiation damage, or radiation damage over time is detected and automatically compensated. Machine learning is used to identify radiation damaged pixels and damaged regions which are subsequently eliminated and replaced by the computational system. The machine learning is used to identify changes in the fixed pattern signal/noise and/or noise of the system, and is then computationally corrected.
Infrared detecting with multiple absorbers in a sensing element
A sensing element of an infrared detector including a first absorber configured to form a first set of minority carriers upon receipt of an infrared flux, a collector, a first barrier disposed between the first absorber and the collector, a second absorber configured to form a second set of minority carriers upon receipt of the infrared flux, and a second barrier disposed between the second absorber and the collector. In response to a voltage being applied to the collector, the first and second set of minority carriers are collected at the collector.
Temperature Detection Through Differential Dual Detectors
Disclosed herein is a sensor system including four interconnected resistors, where two of the resistors are photoconductive detectors, where the photoconductive detectors are illuminated with light at least at two different wavelengths, where two of the resistors does not change their resistance due to the illumination, where an external voltage is applicable to the sensor system, where a differential voltage is measurable, which depends on the resistance changes of the illuminated photoconductive detectors, where the differential voltage gives a mathematical ratio of the four respective resistances.
Temperature Detection Through Differential Dual Detectors
Disclosed herein is a sensor system including four interconnected resistors, where two of the resistors are photoconductive detectors, where the photoconductive detectors are illuminated with light at least at two different wavelengths, where two of the resistors does not change their resistance due to the illumination, where an external voltage is applicable to the sensor system, where a differential voltage is measurable, which depends on the resistance changes of the illuminated photoconductive detectors, where the differential voltage gives a mathematical ratio of the four respective resistances.
VACUUM HEALTH DETECTION FOR IMAGING SYSTEMS AND METHODS
Techniques for facilitating vacuum health detection for imaging systems and methods are provided. In one example, an imaging device includes a detector configured to generate a first reference signal. The imaging device further includes a buffer circuit configured to store a value of the first reference signal. The imaging device further includes a processing circuit coupled to the buffer circuit. The processing circuit is configured to determine a first predetermined value based on a first temperature associated with the detector. The processing circuit is further configured to determine vacuum integrity associated with the detector based at least on the value of the first reference signal and the first predetermined value. Related methods and systems are also provided.
VACUUM HEALTH DETECTION FOR IMAGING SYSTEMS AND METHODS
Techniques for facilitating vacuum health detection for imaging systems and methods are provided. In one example, an imaging device includes a detector configured to generate a first reference signal. The imaging device further includes a buffer circuit configured to store a value of the first reference signal. The imaging device further includes a processing circuit coupled to the buffer circuit. The processing circuit is configured to determine a first predetermined value based on a first temperature associated with the detector. The processing circuit is further configured to determine vacuum integrity associated with the detector based at least on the value of the first reference signal and the first predetermined value. Related methods and systems are also provided.
Structure and Method of Manufacturing for a Hermetic Housing Enclosure for a Thermal Shock Proof, Zero Thermal Gradient Imaging or Sensing Core
There is disclosed a structure and the manufacturing method for packaging for thermopile or equivalent thermal sensing elements of single orientation, 1D arrays and 2D arrays used for thermal or equivalent media sensing. The sensing core has a primary use as a detection core, and accessory use for improved thermal stability through maximizing the flow of heat energy, through the various packaging constituents to achieve a zero thermal gradient effect. The core package comprises of a substrate, a heat spreader for the thermal sensor, an external housing material manufactured from a wafer fabrication process, and an optics of a silicon wafer and other optical components that is attached to the external housing enclosure using wafer level processing. The external housing enclosure can be scaled to a layered architecture into distinct layers that are stacked vertically on top of each other to make for a multi-lens package.
Structure and Method of Manufacturing for a Hermetic Housing Enclosure for a Thermal Shock Proof, Zero Thermal Gradient Imaging or Sensing Core
There is disclosed a structure and the manufacturing method for packaging for thermopile or equivalent thermal sensing elements of single orientation, 1D arrays and 2D arrays used for thermal or equivalent media sensing. The sensing core has a primary use as a detection core, and accessory use for improved thermal stability through maximizing the flow of heat energy, through the various packaging constituents to achieve a zero thermal gradient effect. The core package comprises of a substrate, a heat spreader for the thermal sensor, an external housing material manufactured from a wafer fabrication process, and an optics of a silicon wafer and other optical components that is attached to the external housing enclosure using wafer level processing. The external housing enclosure can be scaled to a layered architecture into distinct layers that are stacked vertically on top of each other to make for a multi-lens package.
INFRARED SENSOR
An infrared sensor is formed in such a manner that an infrared receiver and a base substrate are spaced with a beam made of a thin-film phononic crystal in which through holes are arranged periodically. The beam made of a phononic crystal is formed in such a manner that a period P of through holes increases at arbitrary intervals in a direction from the infrared receiver toward the base substrate.
INFRARED SENSOR
An infrared sensor is formed in such a manner that an infrared receiver and a base substrate are spaced with a beam made of a thin-film phononic crystal in which through holes are arranged periodically. The beam made of a phononic crystal is formed in such a manner that a period P of through holes increases at arbitrary intervals in a direction from the infrared receiver toward the base substrate.