An infrared sensor includes a base substrate, an infrared light receiver, and a beam. The beam includes a separated portion separated from the base substrate to be suspended above the base substrate. The beam is connected at the separated portion to the infrared light receiver. The beam includes a p-type portion containing a p-type semiconductor and an n-type portion containing an n-type semiconductor. The p-type portion has a first three-dimensional structure including first recesses and a first solid portion formed between the first recesses. The first solid portion has, between the first recesses adjacent to each other in plan view, a smallest dimension of less than or equal to 100 nanometers in plan view. The n-type portion has a second three-dimensional structure including second recesses and a second solid portion formed between the second recesses. The second solid portion has, between the second recesses adjacent to each other in plan view, a smallest dimension of less than or equal to 100 nanometers in plan view. The beam satisfies at least one of following conditions (Ia) or (IIa): (Ia) the first solid portion includes a first portion having a Young's modulus of less than or equal to 80% of a Young's modulus of a first reference sample that is made of a material of a type identical to a type of a material constituting the first solid portion and that does not have recesses; and (IIa) the second solid portion includes a second portion having a Young's modulus of less than or equal to 80% of a Young's modulus of a second reference sample that is made of a material of a type identical to a type of a material constituting the second solid portion and that does not have recesses.

An infrared sensor includes a base substrate, an infrared light receiver, and a beam. The beam includes a separated portion separated from the base substrate to be suspended above the base substrate. The beam is connected at the separated portion to the infrared light receiver. The beam includes a p-type portion containing a p-type semiconductor and an n-type portion containing an n-type semiconductor. The p-type portion has a first three-dimensional structure including first recesses and a first solid portion formed between the first recesses. The first solid portion has, between the first recesses adjacent to each other in plan view, a smallest dimension of less than or equal to 100 nanometers in plan view. The n-type portion has a second three-dimensional structure including second recesses and a second solid portion formed between the second recesses. The second solid portion has, between the second recesses adjacent to each other in plan view, a smallest dimension of less than or equal to 100 nanometers in plan view. The beam satisfies at least one of following conditions (Ia) or (IIa): (Ia) the first solid portion includes a first portion having a Young's modulus of less than or equal to 80% of a Young's modulus of a first reference sample that is made of a material of a type identical to a type of a material constituting the first solid portion and that does not have recesses; and (IIa) the second solid portion includes a second portion having a Young's modulus of less than or equal to 80% of a Young's modulus of a second reference sample that is made of a material of a type identical to a type of a material constituting the second solid portion and that does not have recesses.

A system with a detector array, a processor unit and a signal interface. The detector array includes a plurality of bolometric measuring cells and a base body. Each measuring cell is configured to detect infrared radiation and to transmit a measurement signal, which is representative of the readings of the measuring cells, to the processor unit. The processor unit is configured to determine a body heat stored by the base body, to determine a predictive value compensated according to the time delay of the respective measuring cell for each current reading, to determine a temperature value corrected according to the measurement error for each current predictive value, and to determine a thermal image based on the current temperature values, allowing an image signal representing the thermal image to be sent from the signal interface. A corresponding method is also provided.

Microbolometer detectors and arrays fabricated using printed electronics and photonics techniques, including ink-based printing, are disclosed. A microbolometer detector can include a substrate, a platform suspended above the substrate, and a thermistor printed on the platform and made of a thermistor material including an electrically conducting polymer, for example a poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) polymeric composition. The microbolometer detector can also include an electrode structure electrically connected to the thermistor, and an ohmic contact layer interposed between the thermistor and the electrode structure. The electrode structure can be made of an electrode material including silver, while the ohmic contact layer can be made of an ohmic contact material including a PEDOT-carbon nanotube polymeric composition. A microbolometer array can include a plurality of microbolometer detectors arranged in a linear or two-dimensional matrix.

Microbolometer detectors and arrays fabricated using printed electronics and photonics techniques, including ink-based printing, are disclosed. A microbolometer detector can include a substrate, a platform suspended above the substrate, and a thermistor printed on the platform and made of a thermistor material including an electrically conducting polymer, for example a poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) polymeric composition. The microbolometer detector can also include an electrode structure electrically connected to the thermistor, and an ohmic contact layer interposed between the thermistor and the electrode structure. The electrode structure can be made of an electrode material including silver, while the ohmic contact layer can be made of an ohmic contact material including a PEDOT-carbon nanotube polymeric composition. A microbolometer array can include a plurality of microbolometer detectors arranged in a linear or two-dimensional matrix.

A lamp bracket and bracket-type UV fluorescent lamp. The lamp bracket includes: a backboard component, the first lamp base component, the second lamp base component and an inductive component; the first lamp base component is provided on one end of the backboard component; the second lamp base component is provided on the other end of the backboard component, connects to the first lamp base component electrically and is provided with a mounting groove, and works with the first lamp base component and backboard component to form a containing groove in an enclosure way which is used for installing UV fluorescent tube; inductive component is provided in the mounting groove, connects to the second lamp base component and/or the first lamp base component electrically, is used for sensing humans, works with the second lamp base component and/or the first lamp base component to turn on or turn off the fluorescent tube.

A lamp bracket and bracket-type UV fluorescent lamp. The lamp bracket includes: a backboard component, the first lamp base component, the second lamp base component and an inductive component; the first lamp base component is provided on one end of the backboard component; the second lamp base component is provided on the other end of the backboard component, connects to the first lamp base component electrically and is provided with a mounting groove, and works with the first lamp base component and backboard component to form a containing groove in an enclosure way which is used for installing UV fluorescent tube; inductive component is provided in the mounting groove, connects to the second lamp base component and/or the first lamp base component electrically, is used for sensing humans, works with the second lamp base component and/or the first lamp base component to turn on or turn off the fluorescent tube.

The invention relates to a method for determining characteristic-curve correction factors a matrix detector that images in the infrared spectral range. A good image correction can be obtained by virtue of an area of homogeneous temperature being recorded at two different temperatures by the matrix detector, there being two images with different integration times for each temperature. A signal gradient over the integration time is established for each of the pixels from the four pixel values at the two temperatures in each case and the gain being established from the difference of the signal gradients and characteristic-curve correction factors for the gain being stored.

The invention relates to a method for determining characteristic-curve correction factors a matrix detector that images in the infrared spectral range. A good image correction can be obtained by virtue of an area of homogeneous temperature being recorded at two different temperatures by the matrix detector, there being two images with different integration times for each temperature. A signal gradient over the integration time is established for each of the pixels from the four pixel values at the two temperatures in each case and the gain being established from the difference of the signal gradients and characteristic-curve correction factors for the gain being stored.

An imaging system includes a focal plane array, readout electronics, and a computing system in which the number of active pixels is either set at a low-fraction of the total pixels thereby reducing the effect of radiation damage, or radiation damage over time is detected and automatically compensated. Machine learning is used to identify radiation damaged pixels and damaged regions which are subsequently eliminated and replaced by the computational system. The machine learning is used to identify changes in the fixed pattern signal/noise and/or noise of the system, and is then computationally corrected.