The temperature-dependent resistance of a MEMS structure is compared with an effective resistance of a switched CMOS capacitive element to implement a high performance temperature sensor.

A thermal aging estimator for use in a borehole having an ambient temperature of at least 200 F. The estimator may include a thermal aging element positioned adjacent to a heat-sensitive component while in the ambient temperature of at least 200 F. The thermal aging element has a permanent change in an electrical property in response to a thermal exposure, which correlates to cumulative thermal damage from the thermal exposure. The change estimating circuit applies an electrical signal to the thermal aging element.

A microheater performs a self measurement of its own temperature. The microheater has an electrically resistive element which generates heat when a voltage has been applied across the resistive element. The resistive element has an electrical conductivity that is a function of its temperature. A measurement device is positioned within the microheater body and is configured to measure conductivity of the resistive element. An electronic processor, that may be incorporated into the microheater, controls brief interruption of the heating voltage and application of a lower voltage for measuring conductivity. The lower voltage is insufficient to increase the heat output of the microheater, and is applied for too short of a period to allow excessive cooling of the microheater. A microprocessor receives and processes the data obtained from measuring conductivity.

One aspect relates to a method for producing a sensor, in particular a temperature sensor, with at least one electrically conductive layer and at least one additional layer, in particular a passivation layer and/or an insulation layer. According to one aspect, the electrically conductive layer and/or the additional layer, in particular the passivation layer and/or the insulation layer, are produced by aerosol deposition (aerosol deposition method, ADM).

A stretchable multimode sensor and a method of fabricating the same are provided. The stretchable multimode sensor may include a substrate which is formed of a flexible material and includes a pressure sensor area, an optical sensor area, a temperature sensor area and a switching element area, a pressure sensor which is disposed on the pressure sensor area and includes an amorphous metal, an optical sensor which is disposed on the optical sensor area and includes an amorphous metal, and a temperature sensor which is disposed on the temperature sensor area and includes an amorphous metal, and a switching element which is disposed on the switching element area and includes an amorphous metal.

The present invention provides a vapor-permeable flexible sensing platform unit comprising: a first porous membrane, wherein said membrane is substantially flexible and hydrophobic; and a volatile organic compounds (VOCs) sensor disposed on said membrane, the VOCs sensor comprising an electrode array and a conducting polymer porous film being in electric contact with said electrode array, wherein the VOCs sensor is insensitive to lateral strain. Further provided are a method of preparation of said platform unit and a lift-off, float-on (LOFO) method for the preparation of protonically doped polyaniline (PANI) thin films.

A substrate and a display device are disclosed. The substrate includes: a base substrate; a first temperature sensing section disposed on the base substrate; and a first processing chip connected with the first temperature sensing section. The substrate includes a peripheral area and a central area; one part of the first temperature sensing section is disposed in the peripheral area of the substrate; another part of the first temperature sensing section is disposed in the central area of the substrate; and the first processing chip is configured to convert temperature sensing signals of the central area and the peripheral area of the substrate sensed by the first temperature sensing section into relevant control signals and output the signals. The above first temperature sensing section can more accurately measure the temperature difference between the peripheral area and the central area of the substrate.

A copper thermal resistance thin-film temperature sensor chip comprises a substrate, a temperature sensor, and two electrode plates, the temperature sensor which has a plurality of electrically connected resistance elements is placed on the substrate, a portion of the resistance elements form a resistance adjustment circuit. Integrated circuit elements are deposited by thin-film technology. It consists seed layer, copper thermal resistance thin-film layer above the seed layer and passivation layer above the copper thermal resistance thin-film layer. Through semiconductor manufacturing and processing technology, the thermistor layer of this structure is to be fabricated into a serious of thermistor wires and then to form the temperature sensor, furthermore this temperature sensor has a resistance adjustment circuit which is used to adjust resistance value precisely. The preparation method of the sensor chip comprises depositing thin-film on the surface of the substrate, and then a final sensor chip can be obtained through the processing of magnetron sputtering, schematize, peeling, and etching. This sensor chip has the advantages of high impedance, excellent thermal stability, good linearity and low cost.

The present disclosure generally relates to the field of resistive sensing. In particular, the present disclosure relates to a highly sensitive reduced graphene oxide-nickel (RGONi) composite based fast response temperature sensor. Aspects of the present disclosure provide a method for fabrication of a highly sensitive reduced graphene oxide-nickel (RGONi) composite-based temperature sensor. An aspect of the present disclosure provides a temperature sensor comprising: a substrate; and a composite film deposited onto said substrate, wherein the composite film comprises a reduced graphene oxide-nickel composite film. In an embodiment, the temperature sensor is cryo-compatible.

The present disclosure relates to semiconductor structures and, more particularly, to built-in temperature sensors and methods of manufacture. The structure includes: at least one active gate structure; and a built-in temperature sensor adjacent to and on a same device level as the at least one active gate structure, the built-in temperature sensor further includes force lines and sensing lines.