A probe device for nanoscale thermal measurements including an insulating lever, a tip protruding from the insulating lever, a microstructured layer of Niobium Nitride (NbN) extending over only a part of the tip and covering an apex of the tip and/or covering at least one area adjoining the apex of the tip and/or covering, only partly, the insulating lever and at least two conductive leads extending from the insulating lever to the microstructured NbN layer.

According to an aspect, a display device includes: a substrate having a display region; and a plurality of temperature detection wiring lines each having a conductive thin wiring line arranged at a position overlapping with the display region in plan view. A light shielding layer is arranged so as to extend in a first direction in the display region, and the conductive thin wiring line is arranged at a position overlapping with the light shielding layer and extends in the first direction along the light shielding layer in plan view.

The present disclosure includes sensing device embodiments. One sensing device includes a heater layer, a resistance detector layer, constructed and arranged to indicate a temperature value based upon a correlation to a detected resistance value, an electrode layer, and a sensing layer.

A first pair of resistors formed in a first layer of material, and a second pair of resistors formed in the first layer or in a second layer can be wired into a Wheatstone bridge to form a temperature sensor. Either layer can include a semiconductor or a dielectric. In a semiconductor layer, a pair of resistors can be doped areas of the layer, while in a dielectric, a pair of resistors can be material deposited in cavities in the layer, such as material from an added middle-of-line (MOL) metallization layer.

According to an aspect, there is provided a Coulomb blockade thermometer comprising an input electrode; an output electrode; and a sensor component coupled in-between the input and output electrodes. The sensor component comprises: an array of tunnel junctions comprising at least one row of tunnel junctions and first and second heat sinks. The tunnel junctions of the array comprise an insulating layer forming a tunnel barrier between two electrically conducting volumes which are characterized by an absence of superconductivity. The absence of superconductivity is achieved by using titanium tungsten layers or scandium layers. The at least one row comprises first, second and third tunnel junctions. The first heat sink is coupled to the first and second tunnel junctions. The second heat sink is coupled to the second and third tunnel junctions. The first and the second heat sinks are arranged to provide heat dissipation via electron-phonon coupling.

Provided is an electroconductive film having a metal thin-film on a resin film base; and a temperature sensor film which is obtained by patterning the metal thin-film on the resin film base. An electroconductive film (101) which is used for the production of a temperature sensor film comprises a metal thin-film (10) on one principal surface of a resin film base (50), with a chromium oxide thin-film (21) serving as an underlying layer interposed therebetween. A temperature sensor film is obtained by patterning the metal thin-film so as to form a thermometric resistor part and a lead part that is connected to the thermometric resistor part.

A semiconductor device includes a semiconductor body; a gate; a field plate, spaced from the gate, the field plate having a strip-like shape with main extensions along a first direction, the strip-like shape having a first and a second end opposite to one; a first conductive pad in electrical contact with the field plate at the first end through a first connecting region; a second conductive pad in electrical contact with the field plate at the second end through a second connecting region; and a third conductive pad in electrical contact with the field plate at the second end through a third connecting region. The conductive pads allow the use of the field plate as a temperature sensor.

The invention relates to a sensor element comprising a sensor chip and an anisotropically conductive material, wherein the sensor chip has an electrically insulating substrate, at least two contact pads arranged on a first side of the electrically insulating substrate, and a resistor structure on the first side of the electrically insulating substrate, extending from a first contact pad to at least one other contact pad, wherein the resistor structure includes at least one trimmer structure. An anisotropically conductive material is directly or indirectly arranged on the first side of the electrically insulating substrate, at least on the at least one trimmer structure.

A temperature-sensor assembly comprising at least one temperature sensor and at least one supply line, wherein the temperature sensor has at least one electrically insulating substrate with an upper side and an underside, wherein a temperature-sensor structure with at least one sensor-contact surface is formed at least on parts of the upper side, wherein the supply line has at least one supply-line contact surface, wherein the supply-line contact surface is connected to the sensor-contact surface at least in part by means of a first sinter layer.

A semiconductor device includes a first substrate and a first device layer. The first device layer is disposed on the first substrate and includes a first region and a second region of the first device layer. The first device layer includes at least one first device and a sensor aside the at least one first device. The sensor includes a first resistor with a first non-linear temperature resistance curve and a second resistor with a second non-linear temperature resistance curve. A temperature of the sensor is linearly related to a difference between a first resistance of the first resistor at the temperature and a second resistance of the second resistor at the temperature.