A system of fibre based temperature sensor integrated into abase fabric layer for a garment, the system comprising: a set of wall fibres interlaced with one another to form a first wall structure defining a first cavity along a length and a second wall structure defining a second cavity along the length, the set of wall fibres comprising nonconductive material; at least one conductive fibre miming along the length within each cavity, such that the set of wall fibres of the wall structures encloses each at least one conductive fibre in order to electrically insulate each at least one conductive fibre from an environment along the length external to the cavities; and a set of base fibres interlaced with one another to form the base fabric layer.

A temperature sensor arrangement includes a current integrating modulator that provides a count value dependent on the current supplied to its input terminal. A temperature-sensitive element includes a resistor to generate a current dependent on temperature. First and second switches alternately connect the temperature-sensitive element and another resistor to the input terminal of the current integrating modulator. The temperature sensor arrangement can be combined with an ambient light sensor sharing the current integrating modulator.

A temperature sensor arrangement includes a current integrating modulator that provides a count value dependent on the current supplied to its input terminal. A temperature-sensitive element includes a resistor to generate a current dependent on temperature. First and second switches alternately connect the temperature-sensitive element and another resistor to the input terminal of the current integrating modulator. The temperature sensor arrangement can be combined with an ambient light sensor sharing the current integrating modulator.

A method and device for temperature monitoring of a power transistor formed in a semiconductor die comprising are disclosed. A side of a temperature-sensing resistor disposed in the semiconductor die is coupled to a voltage input side of the power transistor. A controller coupled to a second side of the temperature-sensing resistor is configured to detect a voltage across the resistor and trigger a temperature related corrective action using the detected voltage.

Disclosed herein are related to a device and a method for sensing a temperature. In one aspect, the device includes a first resistor including a first metal rail in a first layer. The first metal rail may have a first thermal-resistance coefficient. In one aspect, the device includes a second resistor including a second metal rail in a second layer above the first layer along a direction. The second metal rail may have a second thermal-resistance coefficient. In one aspect, the device includes a sensing circuit coupled to the first resistor and the second resistor. The sensing circuit may be configured to determine a temperature, according to the first metal rail having the first thermal-resistance coefficient and the second metal rail having the second thermal-resistance coefficient.

Disclosed herein are related to a device and a method for sensing a temperature. In one aspect, the device includes a first resistor including a first metal rail in a first layer. The first metal rail may have a first thermal-resistance coefficient. In one aspect, the device includes a second resistor including a second metal rail in a second layer above the first layer along a direction. The second metal rail may have a second thermal-resistance coefficient. In one aspect, the device includes a sensing circuit coupled to the first resistor and the second resistor. The sensing circuit may be configured to determine a temperature, according to the first metal rail having the first thermal-resistance coefficient and the second metal rail having the second thermal-resistance coefficient.

A device for measuring a level of a physical condition includes a sensor configured to sense the physical condition and to produce an electrical output indicative of the sensed physical condition, the sensor having an input and an output, a direct voltage source connected to the sensor input, a current regulator connected in an electrical path between the direct voltage source and the sensor input, and a voltmeter connected in parallel with the sensor such that a voltage detected by the voltmeter is indicative of the level of the sensed physical condition.

A sensor apparatus includes: a sensor that includes a resistor bridge circuit; a temperature detection circuit that provides a first path and a second path; a voltage measurement portion that measures a voltage of each of the differential output terminals; a controller that causes the voltage measurement portion to measure the voltage of each of the two differential output terminals; and a calculator that calculates a difference between the voltages of the two differential output terminals to acquire temperature information of the sensor.

A sensor apparatus includes: a sensor that includes a resistor bridge circuit; a temperature detection circuit that provides a first path and a second path; a voltage measurement portion that measures a voltage of each of the differential output terminals; a controller that causes the voltage measurement portion to measure the voltage of each of the two differential output terminals; and a calculator that calculates a difference between the voltages of the two differential output terminals to acquire temperature information of the sensor.

The invention provides a temperature sensing device of an integrated circuit. The integrated circuit includes a plurality of stacked metal wire layers, and the temperature sensing device includes a first metal sheet, a first via and a second via. The first metal sheet is disposed between the first metal wire layer and the second metal wire layer of the metal wire layers. The first via and the second via are used to connect the first metal sheet and the first metal wire layer, wherein a temperature sensing signal enters the first metal sheet through the first via and leaves the first metal sheet through the second via to measure the temperature of the integrated circuit.