A voltage-glitch detection and protection circuit and method are provided. Generally, circuit includes a voltage-glitch-detection-block (GDB) and a system-reset-block coupled to the GDB to generate a reset-signal to cause devices in a chip including the circuit to be reset when a voltage-glitch in a supply voltage (VDD) is detected. The GDB includes a voltage-glitch-detector coupled to a latch. The voltage-glitch-detector detects the voltage-glitch and generates a PULSE to the system-reset-block and latch. The latch receives the PULSE and generates a PULSE_LATCHED signal to the system-reset-block to ensure the reset-signal is generated no matter a width of the PULSE. In one embodiment, the latch includes a filter and a sample and hold circuit to power the latch, and ensure the PULSE_LATCHED signal is coupled to the system-reset-block when a voltage to the GDB or to the latch drops below a minimum voltage due to the voltage-glitch.

Disclosed is a method for detecting a value which represents the temperature of a vibrating element of an ultrasonic transducer. The ultrasonic transducer has a resonant frequency (f.sub.r). The method comprises the steps of operating the ultrasonic transducer with an electric measuring signal at a measuring frequency (f.sub.m) which is above the resonant frequency, and of detecting the absolute value of the complex impedance of the ultrasonic transducer at this measuring frequency (f.sub.m) and, building thereon, ascertaining the desired value, which is to represent the temperature of a vibrating element of an ultrasonic transducer, as a function of the detected absolute value of the complex impedance of the ultrasonic transducer at this measuring frequency (f.sub.m).

The invention provides a temperature sensing device of an integrated circuit. The integrated circuit includes a plurality of stacked metal wire layers, and the temperature sensing device includes a first metal sheet, a first via and a second via. The first metal sheet is disposed between the first metal wire layer and the second metal wire layer of the metal wire layers. The first via and the second via are used to connect the first metal sheet and the first metal wire layer, wherein a temperature sensing signal enters the first metal sheet through the first via and leaves the first metal sheet through the second via to measure the temperature of the integrated circuit.

The invention provides a temperature sensing device of an integrated circuit. The integrated circuit includes a plurality of stacked metal wire layers, and the temperature sensing device includes a first metal sheet, a first via and a second via. The first metal sheet is disposed between the first metal wire layer and the second metal wire layer of the metal wire layers. The first via and the second via are used to connect the first metal sheet and the first metal wire layer, wherein a temperature sensing signal enters the first metal sheet through the first via and leaves the first metal sheet through the second via to measure the temperature of the integrated circuit.

Current measurement device and methods are provided. An output signal is provided based on a voltage across a resistive element. A correction circuit is configured to estimate an indication of a temperature change of the resistive element based on the voltage across the resistive element and to correct the output of the current measurement device based on the indication of the temperature change and a measured temperature.

A temperature detection circuit (1) includes a first transistor (Q1) of a bipolar type, and a second transistor (Q2) of a bipolar type, wherein the first transistor (Q1) and the second transistor (Q2) form a current mirror circuit (10), and the temperature of the amplifier circuit (30) is detected based on a temperature change of the first transistor (Q1) and the second transistor (Q2).

A temperature detection circuit (1) includes a first transistor (Q1) of a bipolar type, and a second transistor (Q2) of a bipolar type, wherein the first transistor (Q1) and the second transistor (Q2) form a current mirror circuit (10), and the temperature of the amplifier circuit (30) is detected based on a temperature change of the first transistor (Q1) and the second transistor (Q2).

A readout circuit for use with a Wheatstone bridge sensor. At least some of the example embodiments are methods including: driving an excitation signal in parallel through a first set of sensor elements of a Wheatstone bridge sensor and refraining from driving the excitation signal through a second set of sensor elements of the Wheatstone bridge sensor; measuring response of the first set of sensor elements, the measuring response of the first set of sensor elements creates a first measurement; and then driving the excitation signal in parallel through the second set of sensor elements of the Wheatstone bridge and refraining from driving the excitation signal through the first set of sensor elements; and measuring response of the second set of sensor elements, the measuring response of the second set of sensor elements creates a second measurement.

The temperature sensor module includes: a temperature sensor element and a signal processing circuit. The signal processing circuit includes: a series-connection resistor which is connected in series to the temperature sensor element; a temperature detection circuit which detects a temperature; a first analog-digital conversion circuit which converts an output signal from the temperature detection circuit into a digital signal; a memory which stores a series-connection resistor data piece about a relationship between a temperature and the resistance value of the series-connection resistor; a digital signal processing circuit which uses the series-connection resistor data piece, to calculate, on the basis of the digital signal indicating the temperature of the signal processing circuit, a digital command signal for keeping the resistance value of the series-connection resistor at a constant value, and outputs the digital command signal; and a digital-analog conversion circuit which outputs the digital command signal to the series-connection resistor.

An acoustic sensor has a MEMS die with MEMS structure. Among other things, the MEMS structure includes a diaphragm configured to mechanically respond to incident acoustic signals, and a temperature sensor member configured to detect temperature.