A semiconductor device includes a device cell including a gate component configured to receive a gate control signal and a temperature sensing component adjacent to the device cell. Each of the temperature sensing component and the gate component includes polycrystalline silicon.

A physically compliant, 3-dimensional, heterogeneously integrated system includes electronics that have a metal-oxide-semiconductor structure; plural graphene-based sensors; interconnects configured to electrically connect the electronics to the plural graphene-based sensors; and a first polymer layer that extends between the electronics and the plural graphene-based sensors so that the electronics are prevented from directly contacting the plural graphene-based sensors. The electronics, the plural graphene-based sensors, the interconnects, and the first polymer layer are configured to have a thickness that allow the entire system to bend to have a bending radius less than 10 mm.

Various examples of methods and systems related to thermistor sensing for measurement of respiration are shown. In one example, a breath sensing system includes a self-heating temperature sensor that can be positioned in respiratory air of a subject and processing circuitry that can monitor operation of the self-heating temperature sensor. Respiratory information associated with physical or physiological properties of the subject can be communicated to a remotely located computing device. Electronic switching circuitry can be included to change operation of the self-heating temperature sensor between a temperature sensing mode and a heated power dissipation sensing mode. The processing circuitry can control switching between the modes. In another example, a method includes monitoring operational conditions of a self-heating temperature sensor positioned in respired air and determining, e.g., breath velocity, breath period, breath volume, breath carbon dioxide level, and heart rate based at least in part upon the operational conditions.

A temperature sensitive ink composition including a metal oxide nanoparticle; a binder; a solvent; an optional dispersant; and an optional surfactant; wherein the ink composition is a thermistor ink that exhibits a change in resistance which is dependent on temperature. A process for preparing the ink composition. A process including depositing the ink composition onto a substrate to form deposited features; and optionally, heating the deposited features on the substrate to form temperature sensitive features on the substrate, wherein depositing can include ink jet printing or aerosol jet printing.

An electronic device includes a module that delivers a positive temperature coefficient output voltage at an output terminal. A thermistor includes a first MOS transistor operating in weak inversion mode and having a negative temperature coefficient drain-source resistance and whose source is coupled to the output terminal. A current source coupled to the output terminal operates to impose the drain-source current of the first transistor.

An electronic device includes a module that delivers a positive temperature coefficient output voltage at an output terminal. A thermistor includes a first MOS transistor operating in weak inversion mode and having a negative temperature coefficient drain-source resistance and whose source is coupled to the output terminal. A current source coupled to the output terminal operates to impose the drain-source current of the first transistor.

An electronic device includes a module that delivers a positive temperature coefficient output voltage at an output terminal. A thermistor includes a first MOS transistor operating in weak inversion mode and having a negative temperature coefficient drain-source resistance and whose source is coupled to the output terminal. A current source coupled to the output terminal operates to impose the drain-source current of the first transistor.

Various examples provide an electronic device that includes first and second resistor segments. Each of the resistor segments has a respective doped resistive region formed in a semiconductor substrate. The resistor segments are connected between first and second terminals. The first resistor segment is configured to conduct a current in a first direction, and the second resistor segment is configured to conduct the current in a second different direction. The directions may be orthogonal crystallographic directions of the semiconductor substrate.

A thermal sensor includes a first resistor and a first capacitor. The first resistor is a thermistor. A first current source is coupled to the first resistor and the first capacitor. The first current source alternately charges the first resistor and the first capacitor each to a reference voltage, V.sub.therm. An output of the thermal sensor is a function of a resistance-capacitance (RC) time constant of the first resistor and the first capacitor.

The temperature-dependent resistance of a MEMS structure is compared with an effective resistance of a switched CMOS capacitive element to implement a high performance temperature sensor.