G01L9/0022

Wearable underwater and in-air blast sensor

A wearable universal blast sensor includes an underwater pressure sensing transducer and at least one blast parameter sensing transducer to measure a blast parameter from the blast other than pressure, an analog-to-digital converter having an analog input and a digital output, the analog input coupled to the pressure sensing transducer and a digital output, a rolling memory buffer coupled to the digital output of the analog-to-digital converter, at least one controller coupled to the rolling memory buffer and configured to store a time sequence of digital pressure signals from the digital output of the analog-to-digital converter, write into a blast event memory data from the rolling memory buffer including data corresponding to the blast event if one of the digital pressure signals exceeds a set first threshold, generate a first blast magnitude indicator signal if any of the digital pressure signals exceeds a second set threshold.

RESONANT PRESSURE SENSOR

A resonant pressure sensor includes: a housing; a housing-fixed portion that is fixed to the housing; a substrate that comprises: a substrate-fixed portion that is fixed to the housing-fixed portion; and a substrate-separated portion that is separated from the housing-fixed portion in a first direction and extends from the substrate-fixed portion; a first resonator that is disposed in the substrate-separated portion and that detects a change of a resonance frequency based on a strain in the substrate caused by static pressure applied by a pressure-receiving fluid; a first electrode that extends along a second direction perpendicular to the first direction and that outputs an excitation signal to the first resonator to excite the first resonator; and a second electrode that extends along the second direction and from which the first resonator outputs a signal having the resonance frequency.

PRESSURE SENSOR

The present invention is a pressure sensor (1) which includes a sensor main body (2) having a cavity, a cantilever (3) having a lever main body (20) and a lever support portion (21A, 21B) and which is bent according to a pressure difference between the cavity and the outside of the sensor main body (2), and a displacement detection unit (4) which detects displacement of the cantilever (3) based on resistance variation in resistance values of the main body-resistance portion (31) formed in the lever main body (20) and a lever-resistance portion (32) formed in the lever support portion (21A, 21B). A division groove (40) is formed in the lever support (21A), and the division groove (40) divides the lever-resistance portion (32) into a first resistance portion (32a) which is electrically connected to a detection electrode (35) in series and a second resistance portion (32b) which is positioned so as to be closer to the other adjacent lever support portion (21B) than the first resistance portion (32a). The first resistance portion (32a) of the lever support portion (21A, 21B) is electrically connected to the detection electrode (35) via a parallel path of a first path (S1) passing through the main body-resistance portion (31) and a second path (S2) passing through the second resistance portion (32b).

Resonant pressure sensor with improved linearity

A resonant pressure sensor has high linearity and includes: a housing; and a pressure sensing unit that detects a static pressure based on a change value of a resonance frequency and includes: a housing-fixed portion; a substrate that includes a substrate-fixed portion and a substrate-separated portion; the pressure-receiving fluid that is interposed in a gap between the housing-fixed portion and the substrate and envelops the substrate; and a first resonator that is disposed in the substrate-separated portion and detects the change value of the resonance frequency based on a strain in the substrate caused by the static pressure applied by the pressure-receiving fluid, wherein the first resonator is made of a semiconductor material including an impurity, a concentration of the impurity is 1×10.sup.20 (cm.sup.−3) or higher, and an atomic radius of the impurity is smaller than an atomic radius of the semiconductor material.

REAL-TIME LOW LATENCY COMPUTER VISION/MACHINE LEARNING COMPUTE ACCELERATOR WITH SMART CONVOLUTIONAL NEURAL NETWORK SCHEDULER

Methods and devices are provided for processing image data on a sub-frame portion basis using layers of a convolutional neural network. The processing device comprises memory and a processor. The processor is configured to receive frames of image data comprising sub-frame portions, schedule a first sub-frame portion of a first frame to be processed by a first layer of the convolutional neural network when the first sub-frame portion is available for processing, process the first sub-frame portion by the first layer and continue the processing of the first sub-frame portion by the first layer when it is determined that there is sufficient image data available for the first layer to continue processing of the first sub-frame portion. Processing on a sub-frame portion basis continues for subsequent layers such that processing by a layer can begin as soon as sufficient data is available for the layer.

UNIFIED SYSTEM FOR PRESSURE AND FLOWRATE MEASUREMENT
20220205821 · 2022-06-30 · ·

Techniques to provide a unified system for fluid pressure and fluid flowrate measurement are described. Upstream and downstream transducers include piezo devices, and are in contact with a fluid flow, such as in a pipe within a metering device. In an example, a first signal is sent from the upstream transducer to a downstream transducer, and time-of-flight of the first signal is measured. A second signal is sent from the downstream transducer to the upstream transducer, and a time-of-flight of the second signal is measured. A flowrate of the fluid flowing within the passage is calculated, based on the times of flight of the first and second signals. An electrical signal is sent to the first transducer. Upon conclusion of the electrical signal, a pressure of the fluid flowing within the passage is calculated, based at least in part on time of decay of a second electrical signal generated by vibration of the first transducer.

Thickness-shear mode resonators
11359983 · 2022-06-14 · ·

A quartz pressure sensor that resonates in the thickness-shear mode can include a center resonator structure and first and second caps joined to the center resonator structure by bond joints. Each bond joint is comprised of a sealing glass having thickness less than 0.0012 inches (˜30 μm) and a melting point less than 573° C. The quartz pressure sensor can additionally include an inner diameter edge feature formed between the interior sidewall in the joint sidewall of the caps that reduces stresses at the bond joints and/or a high stress point in the cap bore.

Integrated sensor to monitor fluid delivery

A sensor for use in a fluid flow application is provided. The sensor includes an inlet chamber configured to receive a fluid flow from a first conduit, an outlet chamber configured to provide the fluid flow to a second conduit, and a membrane separating the inlet chamber from the outlet chamber, the membrane including a fluid passage to allow the fluid flow from the inlet chamber to the outlet chamber. The sensor also includes a circuit component disposed on the membrane, having an electrical property configured to change according to a deformation of the membrane, and a conductor formed on a substrate and coupled with the circuit component, to provide an electrical signal based on a change in the electrical property of the circuit component. The membrane includes an epitaxial layer formed on the substrate. Methods for fabricating and using the above sensor are also presented.

PIEZOELECTRIC ELEMENT, PIEZOELECTRIC DEVICE, AND METHOD OF MANUFACTURING PIEZOELECTRIC ELEMENT

A piezoelectric element includes a plurality of vibration regions that are separated from each other by a slit, and the slit is formed to have a tapered portion that is tapered from a first surface of the vibration regions on an opposite side to a support to a second surface opposite to the first surface. An electrode film is positioned inside than the slit when being viewed from a normal direction orthogonal to the first surface, and an angle formed by a side surface of the tapered portion in the vibration region and a surface parallel to the first surface is in a range of 39 to 81 degrees.

DIAPHRAGM PRESSURE GAUGE AND COMPOUND PRESSURE GAUGE
20230304883 · 2023-09-28 · ·

A diaphragm pressure gauge includes: a structure disposed under pressure to be measured; two diaphragms attached to the structure so as to oppose each other; and a detection element that is fixed to the two diaphragms to detect displacements of the two diaphragms. In each of the two diaphragms, when one of two surfaces is designated an opposing surface and the other surface is designated a non-opposing surface, the structure and the two diaphragms set a space faced by one of the opposing surface and the non-opposing surface as an airtight space to be kept in a reference vacuum, and the other of the opposing surface and the non-opposing surface is subjected to the pressure to be measured.