Patent classifications
G01L9/0044
PRESSURE MEASUREMENT CELL
A pressure measurement cell is disclosed including a base body, substantially cylindrical at least in sections, a measuring membrane joined to the base body in a pressure-tight manner along a perimeter joint to form a measurement chamber between the base body and the measuring membrane, and a joining material that joins the perimeter joint between the base body and the measuring membrane. The base body and/or the measuring membrane have/has a stepped recess into which the joining material is at least partially disposed, the stepped recess structured to yield a minimum distance between the base body and the measuring membrane.
Single-use plastic pressure sensor
A polymeric fluid sensor includes an inlet configured to receive fluid and an outlet. A polymeric tube is fluidically interposed between the inlet and the outlet and has a first sensing location with a first sidewall thickness and a second sensing location, spaced from the first sensing location, with a second sidewall thickness. A sleeve is disposed about the polymeric tube. The first sidewall thickness is less than the second sidewall thickness and a first sensing element is disposed at the first location and a second sensing element is disposed at the second location. In another example, the first and second sidewall thicknesses are the same and a fluid restriction is disposed within the polymeric tube between the first and second sensing locations.
Silicon based pressure and acceleration optical interferometric sensors with housing assembly
A optical sensor assembly is disclosed that includes a sensor diaphragm configured to deflect responsive to an applied stimulus. The sensor assembly includes a first Extrinsic Fabry-Perot Interferometer (EFPI) having a first optical cavity in communication with at least a portion of the sensor diaphragm, the first EFPI is configured to interact with light to produce a combined measurement light signal and a first common-mode light signal, the measurement light signal corresponding to the applied stimulus. The sensor assembly also includes a second EFPI having a second optical cavity, the second EFPI is configured to interact with light to produce a second common mode light signal for error correction. The sensor assembly may further include a sensing optical fiber in communication with the first EFPI; a reference optical fiber in communication with the second EFPI; and a glass header configured to support the sensing optical fiber and the reference optical fiber.
DEVICE FOR MEASURING A PRESSURE IN A FLUID AND PUMP PROVIDED WITH SUCH A DEVICE
Disclosed is a sensor to measure a pressure in a fluid, of which a body 1 includes a membrane 2 and a wall 3 forming a peripheral support for and around the membrane. The membrane and the peripheral wall are formed from one single component, and the membrane and the peripheral wall together form a flat and smooth front surface 4 intended to be in contact with the fluid.
Sensor element with fastening segment
A sensor element includes: a supporting body; and a sensor body, the sensor body being planar in shape, being made of an elastic material, and having a first surface and a second surface coated so as to be electrically conductive. The sensor body includes a measuring segment and a fastening segment. A layer thickness of the fastening segment is greater than a layer thickness of the measuring segment.
Semiconductor manufacturing method and structure thereof
A semiconductor structure is provided. The semiconductor structure includes a substrate, a plurality of vias, a signal transmitting portion, a heater and a sensing material. The plurality of vias penetrates the substrate, wherein each of the plurality of vias includes a conductive or semiconductive portion surrounded by an oxide layer. The signal transmitting portion is disposed in the substrate, wherein adjacent vias of the plurality of vias surrounds the signal transmitting portion. The heater is electrically connected to the signal transmitting portion, and the sensing material is disposed over the heater and electrically connected to the substrate. A method of manufacturing a semiconductor structure is also provided.
PRESSURE SENSORS WITH TENSIONED MEMBRANES
Pressure sensors having ring-tensioned membranes are disclosed. A tensioning ring is bonded to a membrane in a manner that results in the tensioning ring applying a tensile force to the membrane, flattening the membrane and reducing or eliminating defects that may have occurred during production. The membrane is bonded to the sensor housing at a point outside the tensioning ring, preventing the process of bonding the membrane to the housing from introducing defects into the tensioned portion of the membrane. A dielectric may be introduced into the gap between the membrane and the counter electrode in a capacitive pressure sensor, resulting in an improved dynamic range.
Methods and apparatuses for providing freeze resistant sensing assembly
Methods and apparatuses related to freeze resistant sensing assemblies are provided. An example pressure sensing assembly may include: a first member defining an aperture, the aperture comprising an inner opening disposed on an inner surface of the first member and an outer opening disposed on an outer surface of the first member; a protection diaphragm disposed on the inner surface of the first member; and a sensing diaphragm disposed in a second member fastened to the first member.
PIEZORESISTIVE PRESSURE SENSOR
A piezoresistive pressure sensor includes a substrate and a silicon device layer. The substrate has a cavity. The silicon device layer includes a diaphragm and a support element. A top surface of the diaphragm is connected to a top surface of the support element by one or more side surfaces. A recess of the silicon device layer is defined by the top surface of the diaphragm and the one or more side surfaces. A plurality of piezoresistive regions are on the top surface of the diaphragm, on the one or more side surfaces and on the top surface of the support element. A plurality of conductive regions are on the top surface of the support element. The plurality of conductive regions do not extend to the top surface of the diaphragm. The plurality of piezoresistive regions have a first ion dosage concentration. The plurality of conductive regions have a second ion dosage concentration. The second ion dosage concentration is greater than the first ion dosage concentration.
PRESSURE SENSOR, PRODUCTION METHOD FOR PRESSURE SENSOR, ALTIMETER, ELECTRONIC APPARATUS, AND MOVING OBJECT
A pressure sensor includes a flexible diaphragm which is flexed by pressure changes and a coating layer on one surface of the diaphragm. The diaphragm is a single layer containing silicon, nitrogen, and oxygen. Further, the coating layer contains silicon oxynitride. Also, the coating layer has a nitrogen concentration distribution that varies across the thickness of the coating layer.