Pressure sensor assemblies comprise a sensor body having a sensing membrane and wherein a fluid is placed in communication with the membrane to determine a fluid pressure. A support is connected with the body and includes an opening for receiving the fluid from an external source, wherein the opening is in fluid-flow communication with the membrane. The pressure sensor comprises one or more elements disposed therein configured to mitigate transmission of a fluid pressure spike to the sensing membrane. The body or the support may have a pressure mitigating element, e.g., an internal channel, for receiving the fluid from the opening and transferring it to the membrane, wherein the channel may itself be configured to provide the desired protection against fluid pressure spikes, or may be connected with another internal element to provide such protection.

A sensor includes a substrate, an oxide layer, a membrane, an electrode, and a trench. The oxide layer is disposed on the substrate. The membrane is positioned on the oxide layer. The membrane with the oxide layer and the substrate forms an enclosed cavity therein. The membrane comprises a rigid portion and a deformable portion wherein the deformable portion of the membrane deforms responsive to stimuli. The oxide layer forms side walls of the cavity. The electrode is positioned on the substrate and within the cavity. The trench is formed in the oxide layer, and wherein the trench is covered with barrier material.

A method for making an integrated micro-electromechanical device includes forming a first body of semiconductor material having a first face and a second face opposite the first face. The first body includes a buried cavity forming a diaphragm delimited between the buried cavity and the first face. The diaphragm is monolithic with the first body. The method further includes forming at least one first magnetic via extending between the second face and the buried cavity of the first body, forming a first magnetic region extending over the first face of the first body, and forming a first coil extending over the second face of the first body and being magnetically coupled to the first magnetic via.

In some embodiments, a sensor is provided. The sensor includes a microelectromechanical systems (MEMS) substrate disposed over an integrated chip (IC), where the IC defines a lower portion of a first cavity and a lower portion of a second cavity, and where the first cavity has a first operating pressure different than an operating pressure of the second cavity. A cap substrate is disposed over the MEMS substrate, where a first pair of sidewalls of the cap substrate partially define an upper portion of the first cavity, and a second pair of sidewalls of the cap substrate partially define an upper portion of the second cavity. A sensor area comprising a movable portion of the MEMS substrate and a dummy area comprising a fixed portion of the MEMS substrate are both disposed in the first cavity. A pressure enhancement structure is disposed in the dummy area.

A pressure sensing device includes a support structure, an isolated diaphragm, a working oil, and a MEMS die sensing element. The support structure defines a portion of a sealed cavity. The isolated diaphragm is mounted to the support structure. The isolated diaphragm has in inner side that defines an end of the sealed cavity and an outer side opposite the inner side. The working oil is contained within the sealed cavity. The MEMS die sensing element is enclosed within the support structure. The MEMS die sensing element is exposed to the working oil within the sealed cavity. A pressure exerted on the outer side of the isolated diaphragm by a fluid medium is transferred via the working oil to the MEMS die sensing element to measure the pressure of the fluid medium. The working oil has a low vapor pressure and a low volatility content.

A semiconductor device includes a pad formed on a surface of a substrate, a bonding wire for connecting the pad to an external circuit, and a resin layer covering at least a connection portion between the pad and the bonding wire and exposing at least a part of the substrate outside the pad.

A pressure sensor assembly includes a pressure sensor, a pedestal and an electrically conductive header having a header cavity. The pressure sensor includes, an electrically conductive sensing layer having a sensor diaphragm, an electrically conductive backing layer having a bottom surface that is bonded to the sensing layer, an electrically insulative layer having a bottom surface that is bonded to a top surface of the backing layer, and a sensor element having an electrical parameter that changes based on a deflection of the sensor diaphragm in response to a pressure difference. The pedestal is bonded to the electrically insulative layer and attached to the header within the header cavity.

A micromechanical pressure sensor device is equipped with a sensor substrate including a front side and a rear side. The device includes a pressure sensor unit suspended in the sensor substrate, a first cavity above the pressure sensor unit, which is exposed toward the front side via one or multiple access openings, one or multiple stress relief trenches, which laterally enclose the pressure sensor unit and form a fluidic connection from the rear side to the first cavity, and a circuit substrate, on which the rear side of the sensor substrate is bonded. A second cavity, which is in fluidic connection with the stress relief trenches, is formed below the pressure sensor unit in the circuit substrate. At least one channel is provided in a periphery of the pressure sensor unit, which is in fluidic connection with the second cavity and is exposed to the outside.

In some embodiments, a sensor is provided. The sensor includes a microelectromechanical systems (MEMS) substrate disposed over an integrated chip (IC), where the IC defines a lower portion of a first cavity and a lower portion of a second cavity, and where the first cavity has a first operating pressure different than an operating pressure of the second cavity. A cap substrate is disposed over the MEMS substrate, where a first pair of sidewalls of the cap substrate partially define an upper portion of the first cavity, and a second pair of sidewalls of the cap substrate partially define an upper portion of the second cavity. A sensor area comprising a movable portion of the MEMS substrate and a dummy area comprising a fixed portion of the MEMS substrate are both disposed in the first cavity. A pressure enhancement structure is disposed in the dummy area.

In some implementations a semiconductor die comprises a semiconductor chip. The semiconductor chip comprises a piezoresistive pressure sensor element and at least one capacitive acceleration sensor element. The piezoresistive pressure sensor element is arranged to the side of the capacitive acceleration sensor element. In some implementations, a method for producing a semiconductor die includes applying an insulation layer to the semiconductor wafer. A section of the monocrystalline cover layer may be exposed by structuring the insulation layer. A semiconductor layer having a monocrystalline section and a polycrystalline section may be generated by deposition of a semiconductor material.