A pressure sensor includes a piezoelectric substrate having a generally planar structure and an anchor location fixing the piezoelectric substrate at the periphery of the planar structure of the piezoelectric substrate. The planar structure of the piezoelectric substrate has a first region having a first characteristic thickness adjacent to the anchor location, and a second region have a second characteristic thickness at a middle region of the substrate. The second characteristic thickness is less than the first characteristic thickness such that the planar structure in the second region is displaced relative to the neutral axis of the planar structure such that while undergoing bending the second region has either mostly compressive or mostly tensile stress.

A square-shaped pressure sensor in which the four sides of the sensor have stepped edge features. The stepped edge features are formed using deep reactive ion etch (DRIE) techniques. The sensor comprises of a first side, a second side, a third side, and a fourth side, and a diaphragm positioned between the four sides. The first side has an outside face comprised of a first ledge and a second ledge; the second side has an outside face comprised of a third ledge and a fourth ledge, the third side has an outside face comprised of a fifth to ledge and a sixth ledge, and the fourth side has an outside face comprised of a seventh ledge and an eighth ledge. The eight ledges are the stepped edge features of the sensor.

A pressure sensor element includes a die; a cavity and a trench formed in one surface of the die and defining therebetween a partition wall integral with and formed of the same material as the die; and a membrane formed on the die and covering the cavity and the trench.

A semiconductor differential pressure sensor element is such that as strain sensitive elements are disposed only inside a diaphragm, and strain relaxation grooves are provided along the diaphragm, it is difficult for thermal stress caused by expansion or contraction of a case to propagate to the strain sensitive elements, thus suppressing characteristic fluctuations resulting from a change in external temperature. Also, as a configuration is such that a sacrificial column is provided inside a depressed portion, and that the diaphragm is held by the sacrificial column in a diaphragm formation step which thins a second semiconductor substrate and a functional element formation step which repeatedly implements a cleaning step, breakage of the diaphragm can be prevented, thus achieving a significant improvement in yield.

A semiconductor pressure sensor includes a fixed electrode placed at a principal surface of a semiconductor substrate, and a diaphragm movable through an air gap in a thickness direction of the semiconductor substrate at least in an area where the diaphragm is opposed to the fixed electrode. The diaphragm includes: a movable electrode; a first insulation film placed closer to the air gap with respect to the movable electrode; a second insulation film placed opposite to the air gap with respect to the movable electrode, the second insulation film being of a same film type as the first insulation film; and a shield film that sandwiches the second insulation film with the movable electrode.

The present invention provides a pressure transducer (1) and a method for fabricating a pressure transducer. The pressure transducer is for use in a gas pressure gauge and uses a squeeze-film. The pressure transducer comprises a first wafer (2) and a second wafer (3), wherein at least the first wafer comprises a device layer (2.1) and a handle layer (2.3); the second wafer (3) has a top and bottom surface; and wherein at least the device layer (2.1) of the first wafer (2) is structured. The pressure transducer further comprises a membrane (4.1), a cavity (5) between the membrane (4.1) and the second wafer (3), wherein the cavity (5) has a cavity bottom, an inlet (12) connecting the cavity (5) to a surrounding, a suspension (6) of the membrane (4.1), wherein the suspension (6) allows oscillation of the membrane (4.1), and an oscillation generator to set the membrane (4.1) in oscillation. The pressure transducer is characterized in that the structured device layer (2.1) of the first wafer (2) comprises the membrane (4.1) and suspension (6) of the membrane (4.1), in that the first wafer (2) is bonded to the top surface of the second wafer (3), and in that the handle layer (2.3) of the first wafer (2) is structured to release the suspension (6).)

A pressure sensor includes a base having at least one high-pressure contact portion and a diaphragm positioned over the base and having an external top surface facing away from the base and internal surfaces facing the base. The internal surfaces comprising a raised perimeter surrounding an interior, a raised central boss within the interior, and a raised boss arm contiguous with and extending from the raised perimeter toward the interior. At least one of the raised boss arm and raised central boss are aligned with and contact a high-pressure contact portion of the base during an over-pressure event.

A pressure sensor die assembly for a differential pressure sensor comprises a base substrate including a first overpressure stop structure on a first surface, and a diaphragm structure coupled to the first surface. The diaphragm structure comprises a first side with a cavity section that includes a first cavity and a second cavity surrounding the first cavity, and a second side opposite from the first side. A pressure sensing diaphragm portion is defined by the first cavity and is located over the first overpressure stop structure. An overpressure diaphragm portion is defined by the second cavity. A top cap coupled to the second side of the diaphragm structure includes a second overpressure stop structure. The overpressure stop structures are each sized to support substantially all of a strained area of the pressure sensing diaphragm portion at an increasing overpressure on the first or second sides of the diaphragm structure.

Methods and apparatuses for measuring static and dynamic pressures in harsh environments are disclosed. A pressure sensor according to one embodiment of the present invention may include a diaphragm constructed from materials designed to operate in harsh environments. A waveguide may be operably connected to the diaphragm, and an electromagnetic wave producing and receiving (e.g., sensing) device may be attached to the waveguide, opposite the diaphragm. A handle may be connected between the diaphragm and the waveguide to provide both structural support and electrical functionality for the sensor. A gap may be included between the handle and the diaphragm, allowing the diaphragm to move freely. An antenna and a ground plane may be formed on the diaphragm or the handle. Electromagnetic waves may be reflected off the antenna and detected to directly measure static and dynamic pressures applied to the diaphragm.

A sensor element suitable for miniaturization. This pressure sensor element has: a metal plate; an insulating film provided on a first surface, which is one surface of the metal plate, so as to form a covered region in which the first plate is covered and an exposed region in which the first surface is exposed; and a pressure detection circuit formed on the insulating film so as to be insulated from the first surface by means of the insulating film.