A sensor die includes a diaphragm having a first membrane and a second membrane positioned within the first membrane. The first membrane is deflectable in proportion with a differential pressure between a first side of the diaphragm and a second side of the diaphragm opposite the first side. The second membrane is deflectable simultaneously with the first membrane in proportion with an absolute pressure on the first side of the diaphragm.

A micromechanical pressure sensor element as well as a pressure sensing system comprising such a pressure sensor element, with which the pressure sensor element establishes an electrical contact in the event of a specified first pressure being applied. The pressure sensor element has a membrane that can be moved or deflected by an applied pressure. A first cavity into which the membrane can be deflected is provided below the membrane. Two contact elements are provided which come into contact with each other, in particular via a mechanical contact, on the basis of a first applied pressure being exceeded so that an electric contact is established. At least one first contact element, which is directly or indirectly connected to the membrane, and a second contact element, which is directly or indirectly connected to the cavity bottom, are provided.

A piezoresistive pressure sensor includes a substrate and a silicon device layer. The substrate has a cavity. The silicon device layer includes a diaphragm and a support element. A top surface of the diaphragm is connected to a top surface of the support element by one or more side surfaces. A recess of the silicon device layer is defined by the top surface of the diaphragm and the one or more side surfaces. A plurality of piezoresistive regions are on the top surface of the diaphragm, on the one or more side surfaces and on the top surface of the support element. A plurality of conductive regions are on the top surface of the support element. The plurality of conductive regions do not extend to the top surface of the diaphragm. The plurality of piezoresistive regions have a first ion dosage concentration. The plurality of conductive regions have a second ion dosage concentration. The second ion dosage concentration is greater than the first ion dosage concentration.

An environmental sensor and manufacturing method thereof. The environmental sensor comprises: a substrate comprising at least one recess disposed at an upper portion of the substrate; and a sensitive film layer disposed above the substrate, comprising a fixed portion fixed on an end surface of the substrate and a bent portion configured to extend inside the recess. The bent portion and a side wall of the recess form a capacitor configured to detect a signal. The bent portion, fixed portion, and the recess form a closed cavity. A conventional capacitive structure configured on a substrate surface is changed to a capacitive structure of the environmental sensor vertically extending into the inside of the substrate, increasing a depth of the recess, and in turn, increasing a sensing area between two polar plates of the capacitor, significantly shrinking a coverage area of the capacitor on the substrate, and satisfying a requirement of a modern compact electronic component.

A pressure sensor according to an embodiment includes: a support member; a membrane supported by the support and having flexibility; and a strain detection element formed on the membrane. The strain detection element includes a first magnetic layer formed on the membrane and having a magnetization, a second magnetic layer having a magnetization, and an intermediate layer formed between the first magnetic layer and the second magnetic layer. A direction of at least one of the magnetization of the first magnetic layer and the magnetization of the second magnetic layer changes relatively to that of the other depending on a strain of the membrane. Moreover, the membrane includes an oxide layer that includes aluminum.

A strain gauge includes: a substrate; a dielectric layer on the substrate; a thin film electrical circuit on the dielectric layer and having input/output terminals; other layers disposed on the electrical circuit; the dielectric layer forming a first seal on one side of the electrical circuit, the other layers forming a second seal on a second side of the electrical circuit, the first and second seals having structure such that: in a first instance prior to exposure of the strain gauge to an autoclave cycle, the electrical circuit is productive of a first output voltage in response to a first input voltage; and in a second instance subsequent to exposure of the strain gauge to at least 25 autoclave cycles, the electrical circuit is productive of a second output voltage in response to a second input voltage, the first and second input voltages being equal, and the first and second output voltages being equal.

The present disclosure includes a pressure transducer comprising: a frame; a cantilevered beam; a resilient beam portion; a signal processing circuit; a wiring terminal; and a support member. The resilient beam portion anchors the cantilevered beam to the frame.

The cantilevered beam moves in response to a pressure-induced force applied to the cantilevered beam and the resilient beam portion bends producing a strain within the resilient beam portion. The support member comprises a cavity and the signal processing circuit is entirely installed inside the cavity. There is a strain gauge diffused into, implanted into, and/or affixed to the resilient beam portion. The cavity of the support member includes a first aperture disposed along the first surface of the support member and the inner surface of the frame covers the first aperture.

A pressure sensor includes a substrate having a diaphragm bent and deformed by pressure reception, a side wall portion disposed on one surface side of the substrate and surrounding the diaphragm in plan view of the substrate, a sealing layer disposed to face the diaphragm with space interposed between the sealing layer and the diaphragm and sealing the space, and a metal layer positioned between the side wall portion and the sealing layer and disposed to surround the diaphragm in plan view of the substrate, and an inner peripheral end of the metal layer is positioned outside the diaphragm in plan view of the substrate.

A packaged pressure sensor assembly is disclosed that includes a pressure sensor including an upper substrate and a lower substrate bonded to one another by way of a first glass frit having a first bonding temperature, so as to define a hermetically sealed pressure sensing chamber therebetween, and a housing defining an internal cavity having a base with a support surface for supporting the pressure sensor, wherein the pressure sensor is bonded to the support surface of the base by a second glass frit having a second bonding temperature that is lower than the first bonding temperature.

A sealed sensor device (104) comprising: an internal atmosphere comprising a gas pressurised to a predetermined pressure, the predetermined pressure being below atmospheric pressure when the internal atmosphere is hermetically sealed from ambient. A sensor cavity (214) is also provided having a periphery and is in fluid communication with the internal atmosphere, thereby comprising the gas and the gas having a mean free path at the predetermined pressure associated therewith. A thermopile (256) is disposed in the sensor cavity (214) for detecting a change in pressure of the internal atmosphere and detecting failure of the hermetic seal. A membrane structure (234) disposed within the cavity comprises the thermopile (256). The membrane structure (234) also comprises a heating element, and a shortest distance from substantially any point on the membrane structure (234) to the periphery of the sensor cavity (214) is less than the mean free path of the gas at the predetermined pressure.