G01L9/0048

SURFACE STRESS SENSOR, HOLLOW STRUCTURAL ELEMENT, AND METHOD FOR MANUFACTURING SAME

Provided are a surface stress sensor that enables deterioration in measurement precision to be suppressed and a method for manufacturing the same. A surface stress sensor includes: a membrane configured to be bent by applied surface stress; a frame member configured to surround the membrane with gaps interposed therebetween when viewed from the thickness direction of the membrane; at least a pair of coupling portions configured to couple the membrane and the frame member; a flexible resistor configured to be disposed on at least one of the coupling portions and have a resistance value that changes according to bending induced in the coupling portion; and a support base member configured to be connected to the frame member and overlap the frame member when viewed from the thickness direction of the membrane, in which a cavity portion is disposed between the membrane and the support base member.

Membrane with hierarchically arranged micrometer-sized and sub micrometer-sized units, pressure sensor system with improved measurement accuracy and method for producing such a pressure sensor system

In an embodiment a membrane includes a hydrophobic region having a plurality of hierarchically arranged micrometer-sized and submicrometer-sized units consisting of a membrane material, wherein a single micrometer-sized unit has a diameter of from 1 μm to 5 μm and a single submicrometer-sized unit has a diameter of <1 μm, and wherein the membrane is configured to be used in a pressure sensor system.

Pressure sensors with tensioned membranes

Pressure sensors having ring-tensioned membranes are disclosed. A tensioning ring is bonded to a membrane in a manner that results in the tensioning ring applying a tensile force to the membrane, flattening the membrane and reducing or eliminating defects that may have occurred during production. The membrane is bonded to the sensor housing at a point outside the tensioning ring, preventing the process of bonding the membrane to the housing from introducing defects into the tensioned portion of the membrane. A dielectric may be introduced into the gap between the membrane and the counter electrode in a capacitive pressure sensor, resulting in an improved dynamic range.

Optical scanning apparatus and lidar with extinction component
11662438 · 2023-05-30 ·

An apparatus in the field of optics technology, can include a reflector, a reflector substrate, and an extinction component. The reflector can be mounted on the reflector substrate. The extinction component can be arranged on a front surface of the reflector substrate. The reflector can be configured to reflect incident light signals. The extinction component can be configured to reduce the scattered light produced by the incident light signal on the reflector substrate. An optical scanning device (for example, lidar) having such features may greatly reduce the scattered light inside the lidar, reduce the detection blind area caused by the stray light, and greatly improve the receiving and detecting capabilities of the lidar.

SEMICONDUCTOR PRESSURE SENSOR
20170349430 · 2017-12-07 · ·

A semiconductor pressure sensor includes a fixed electrode placed at a principal surface of a semiconductor substrate, and a diaphragm movable through an air gap in a thickness direction of the semiconductor substrate at least in an area where the diaphragm is opposed to the fixed electrode. The diaphragm includes: a movable electrode; a first insulation film placed closer to the air gap with respect to the movable electrode; a second insulation film placed opposite to the air gap with respect to the movable electrode, the second insulation film being of a same film type as the first insulation film; and a shield film that sandwiches the second insulation film with the movable electrode.

DIFFERENTIAL PRESSURE SENSOR FULL OVERPRESSURE PROTECTION DEVICE
20170343438 · 2017-11-30 ·

A pressure sensor die assembly for a differential pressure sensor comprises a base substrate including a first overpressure stop structure on a first surface, and a diaphragm structure coupled to the first surface. The diaphragm structure comprises a first side with a cavity section that includes a first cavity and a second cavity surrounding the first cavity, and a second side opposite from the first side. A pressure sensing diaphragm portion is defined by the first cavity and is located over the first overpressure stop structure. An overpressure diaphragm portion is defined by the second cavity. A top cap coupled to the second side of the diaphragm structure includes a second overpressure stop structure. The overpressure stop structures are each sized to support substantially all of a strained area of the pressure sensing diaphragm portion at an increasing overpressure on the first or second sides of the diaphragm structure.

Silicon based pressure and acceleration optical interferometric sensors with housing assembly

A optical sensor assembly is disclosed that includes a sensor diaphragm configured to deflect responsive to an applied stimulus. The sensor assembly includes a first Extrinsic Fabry-Perot Interferometer (EFPI) having a first optical cavity in communication with at least a portion of the sensor diaphragm, the first EFPI is configured to interact with light to produce a combined measurement light signal and a first common-mode light signal, the measurement light signal corresponding to the applied stimulus. The sensor assembly also includes a second EFPI having a second optical cavity, the second EFPI is configured to interact with light to produce a second common mode light signal for error correction. The sensor assembly may further include a sensing optical fiber in communication with the first EFPI; a reference optical fiber in communication with the second EFPI; and a glass header configured to support the sensing optical fiber and the reference optical fiber.

Sensor element with fastening segment

A sensor element includes: a supporting body; and a sensor body, the sensor body being planar in shape, being made of an elastic material, and having a first surface and a second surface coated so as to be electrically conductive. The sensor body includes a measuring segment and a fastening segment. A layer thickness of the fastening segment is greater than a layer thickness of the measuring segment.

Method for producing a connection between two ceramic parts - in particular, of parts of a pressure sensor
20170305799 · 2017-10-26 ·

A method according to the invention for producing a connection between two surfaces or surface sections of two ceramic parts comprises: provision of a first ceramic part and of a second ceramic part; provision of an active brazing solder material on at least one surface section of at least one of the ceramic parts; and heating the active brazing solder in a vacuum brazing process. The whole active brazing solder material is provided for connecting the first and the second ceramic part by a sputtering method, wherein at least one surface section of at least one of the ceramic parts, preferably of the two ceramic parts, is layered with a layer sequence of individual components of the active brazing solder material, wherein the average strength of the layers of an individual component of the active brazing solder is no more than 0.5%, in particular not more than 0.2%, preferably not more than 0.1% and especially preferably not more than 0.05% of the strength of the joining region.

Pressure gauge chip and manufacturing process thereof

The present invention is related to a sensor. In particular, the present invention is related to a pressure sensor die and its fabrication process. The pressure sensor comprises a chamber inside which a pressure sensor die is provided. The pressure sensor die is uniformly compressed by the external pressure to be measured and can deform freely inside the chamber. The pressure sensor die is primarily constructed of single crystalline silicon and comprises a substrate and a cap connected together. A recess is formed on the cap. The recess forms a sealed cavity with the substrate. A silicon oxide layer is formed between the substrate and the cap. The substrate further comprises a plurality of piezoresistive sensing elements which are located inside the sealed cavity. The present pressure sensor is more immune to temperature effects. It is especially suitable for operating in a high temperature, high pressure environment and is capable of delivering accurate and reliable pressure measurements at low cost.