An electronic device with a force sensing device is disclosed. The electronic device comprises a user input surface defining an exterior surface of the electronic device, a first capacitive sensing element, and a second capacitive sensing element capacitively coupled to the first capacitive sensing element. The electronic device also comprises a first spacing layer between the first and second capacitive sensing elements, and a second spacing layer between the first and second capacitive sensing elements. The first and second spacing layers have different compositions. The electronic device also comprises sensing circuitry coupled to the first and second capacitive sensing elements configured to determine an amount of applied force on the user input surface. The first spacing layer is configured to collapse if the applied force is below a force threshold, and the second spacing layer is configured to collapse if the applied force is above the force threshold.

A semiconductor pressure sensor includes a first silicon substrate and a second silicon substrate. One main surface of the second silicon substrate has a recess formed therein. The recess has a support that protrudes toward the first silicon substrate formed therein. The support includes four side parts that are arranged to form a rectangular frame shape. The recess and the first silicon substrate have an inner cavity and an outer cavity that are formed therebetween. The inner cavity is arranged on an inner side of the support, and the outer cavity is arranged on an outer side of the support. The other main surface of the first silicon substrate has piezoresistive elements formed therein. The piezoresistive elements are arranged at or in the vicinity of a position overlapping the support, as seen from a normal direction of the first silicon substrate.

A metallic pressure measuring cell having a base body, a metallic membrane situated and a pressure sensor situated in a sensor chamber of the base body, wherein the pressure on the membrane is transmitted to the pressure sensor by a connecting channel formed between a membrane chamber and a sensor chamber, wherein the chambers and connecting channel are filled with a pressure transmitting medium.

This disclosure provides systems and methods for a fluid-filled pressure sensor assembly for higher pressure environments. A fluid-filled pressure sensor assembly may be adapted for coupling to a structure at a mating surface and may include a header; a pressure sensor coupled to the header; a diaphragm coupled to the header and configured for positioning forward of the mating surface so that a fluid region is disposed between the diaphragm and the pressure sensor; a fill hole coupled to the fluid region; a sealing element coupled to the fill hole and configured for positioning forward of the mating surface; and wherein during operation the first pressure applied at the diaphragm is substantially transferred by the fluid in the fluid region and the fill hole to an inner-side of the sealing element and the first pressure is about equivalent to a second pressure applied at an outer-side of the sealing element.

A sensing platform comprises a semiconductor junction, in particular a SiC/Si heterojunction, with a pair of electrodes located on a surface of an upper layer of the semiconductor junction in a spaced apart relationship. The sensing platform comprises a light source above the surface of the upper layer to illuminate a part of the surface of the semiconductor junction comprising at least part of one of the electrodes to create a lateral potential gradient between the pair of electrodes through the photovoltaic effect in the semiconductor. Parameters, such as force and temperature, are detected based on measuring a change in electrical resistance of the semiconductor material due to the piezoresistive effect and/or the thermoresistive effect. An external potential difference can be applied between the pair of electrodes to create a tuning current to modulate the piezoresistive and thermoresistive effects in the semiconductor junction. The sensing platform is used for highly sensitive force sensors and highly sensitive temperature sensors.

A pressure sensor includes a housing, a pressure chamber defined within the housing, and a pressure transducer. The pressure sensor also includes a header that seals the pressure chamber and supports the pressure transducer in the pressure chamber. A plurality of pins extend through respective openings in the header. The sensor pins have first ends electrically connected to the pressure transducer in the pressure chamber and second ends electrically connected to sensor electronics outside the pressure chamber. The pins are electrically insulated from the header. The header is configured so that the electrical insulation of at least one pin from the header is less than the electrical insulation of the remaining pins from the header.

A pressure sensor includes a housing, an isolator positioned at a first end of the housing, and a first cavity formed between the first end of the housing and the isolator. The pressure sensor further includes a second cavity formed in the housing and a channel with a first end fluidly connected to the first cavity and a second end fluidly coupled to the second cavity. A pressure sensor chip is positioned in the second cavity and includes a first diaphragm positioned at a top side of the pressure sensor chip laterally outwards from the second end of the channel.

A sensor element is disclosed. In an embodiment, a sensor element with an increased level of integration includes a main part with a membrane and an edge zone arranged around the membrane and an electrically conductive layer having a first region arranged over the membrane of the main part and a second region arranged over the edge zone of the main part, wherein the membrane is a pressure-sensitive zone of the main part such that the membrane is configured to undergo deformation as a function of a pressure differential between an upper side and an underside of the membrane, wherein the edge zone is a pressure-insensitive zone, and wherein the electrically conductive layer is structured in the second region such that at least one temperature-dependent resistance is formed in the second region of the electrically conductive layer.

The invention discloses a MEMS pressure sensor, which includes a bulk silicon layer, a buried oxygen layer, a substrate, a varistor, a first passivation layer, an electrode layer, and a second passivation layer. The varistor is located on the upper surface of the buried oxygen layer, and the first passivation layer is a rectangular shell located on the upper surface of the buried oxygen layer; there is a through hole in the center of the top of the rectangular shell; the first passivation layer covers the varistor, and the gap between the first passivation layer and the varistor forms an isolation cavity. The electrode layer is located on the upper surface of the first passivation layer and is connected with the varistor via the through hole. The second passivation layer is located on the upper surface of the electrode layer.

This semiconductor pressure sensor includes: a first semiconductor substrate; a second semiconductor substrate; and a first piezoresistance element and a second piezoresistance element provided in the second semiconductor substrate. A first recess and a second recess are formed on the first semiconductor substrate, and a first cavity surrounded by the first recess and the second semiconductor substrate and a second cavity surrounded by the second recess and the second semiconductor substrate are formed. The first piezoresistance element is formed at a position overlapping an outer periphery of the first cavity or a position inward of the outer periphery of the first cavity. The second piezoresistance element is formed at a position overlapping an outer periphery of the second cavity, a position overlapping an inner periphery of the second cavity, or a position inward of the outer periphery and outward of the inner periphery of the second cavity.