Disclosed is a pressure detecting device having a temperature sensor, the device including: a housing having a first chamber, a second chamber, and a port part having a fluid guide tube that guides a pressure transmitting fluid to the second chamber; a lead frame coupled to the housing and configured for being connected to an external device; a circuit substrate electrically connected to the lead frame and including a first surface and a second surface; a pressure detecting element provided on the second surface of the circuit substrate and generating an electrical signal according to a pressure change; a tube coupled to the port part, whereby a first end of the tube is open and provided inside the first chamber; and a temperature detecting element provided inside the tube and transmitting an electrical signal generated according to a temperature change to the circuit substrate.

An MEMS pressure sensing element is disclosed, comprising a substrate with a groove; a pressure-sensitive film on the substrate for sealing an opening of the groove to form a sealed cavity body; and a pressure-sensitive beam suspended in the sealed cavity body and parallel with the pressure-sensitive film provided with varistors, wherein a center of the pressure-sensitive beam is fixedly connected to that of the pressure-sensitive film, and a periphery is fixedly connected to a bottom wall of the groove of the substrate, such that the pressure-sensitive film drives the pressure-sensitive beam to bending deformation under an external pressure.

An MEMS pressure sensing element is disclosed, comprising a substrate with a groove; a pressure-sensitive film on the substrate for sealing an opening of the groove to form a sealed cavity body; and a pressure-sensitive beam suspended in the sealed cavity body and parallel with the pressure-sensitive film provided with varistors, wherein a center of the pressure-sensitive beam is fixedly connected to that of the pressure-sensitive film, and a periphery is fixedly connected to a bottom wall of the groove of the substrate, such that the pressure-sensitive film drives the pressure-sensitive beam to bending deformation under an external pressure.

The invention relates to a pressure measuring cell with a base body including an internal space, which base body comprises a first opening. A pressure sensor is arranged in the internal space of the base body and the internal space is filled with a pressure transfer medium. The pressure measuring cell further comprises an uneven membrane made from plastic. The membrane fully covers the first opening of the base body and is metallically coated at least on one of its two sides.

A sense die comprises a chip comprising a sense diaphragm, one or more sense elements supported by the diaphragm, one or more bond pads supported by a first side of the chip, a structural frame disposed on the first side of the chip, and one or more electrical contacts extending through the structural frame. Each of the one or more bond pads is electrically coupled to at least one of the one or more sense elements. The structural frame is disposed at least partially about the diaphragm, and the one or more electrical contacts are electrically coupled to the one or more bond pads.

A pressure sensor includes a stem including a base wall and a side wall extending in a first direction crossing the base wall; a first resistive film pattern provided in an outer region of an outer base surface of the base wall, the outer region overlying the side wall in plan view from the first direction; and a second resistive film pattern provided at least partly in an inner region of the outer base surface, the inner region not overlying the side wall in plan view from the first direction. The first resistive film pattern includes circumferentially oriented pattern portions connected with a turn, the circumferentially oriented pattern portions extending along a circumferential direction and having different distances from a center of the outer base surface.

Provided is a pressure detection device including: a semiconductor substrate having an upper surface; a bulk region of a first conductivity type provided in the semiconductor substrate; a piezo-resistive region of the first conductivity type provided between the bulk region and the upper surface of the semiconductor substrate; a first well region of a second conductivity type provided between the piezo-resistive region and the bulk region; and a first low-concentration region of the second conductivity type provided between the first well region and the bulk region and having a lower concentration than the first well region.