The present disclosure provides a pressure sensor, including a chamber and a film. The chamber includes a first wall with a first electrode and a second wall with a second electrode. The first wall faces the second wall, and the first electrode and the second electrode respectively include conductive or semiconductive material. The film lines a surface inside the chamber exclusive of the first electrode and the second electrode for blocking outgassing entering the chamber from the surface. A method of manufacturing the pressure sensor is also disclosed.

A high-precision pressure sensor, having a first base body that has two electrically conductive layers and an insulation layer arranged between the two layers and electrically insulating the two layers from one another, an electrically conductive measurement membrane arranged on the first base body with inclusion of a pressure chamber, which measurement membrane can be charged with a pressure to be measured, and an electrode provided in the membrane-facing layer and spaced apart from the measurement membrane, which electrode together with the measurement membrane forms a capacitor having a capacitance that varies according to the pressure acting upon the measurement membrane. The first base body is characterized in that it has a measurement membrane terminal via which a reference potential can be applied to the measurement membrane, an electrode terminal via which an electrode potential of the electrode can be tapped, and a shield terminal via which a shield potential that can be predetermined independently of the reference potential especially, a shield potential corresponding to the electrode potential can be applied to the layer facing away from the membrane.

According to some aspects of the subject technology, an apparatus includes a first electrode, a second electrode and a dielectric membrane disposed between the first electrode and the second electrode. The first electrode and the second electrode include a number of pores within a region of an input port of the apparatus. The first electrode, the second electrode and the dielectric membrane form a capacitor that is configured to enable detection of occlusion of the input port by water.

A plurality of core bodies are housed within a casing having an opening portion on one end side. A core body selecting mechanism is provided which includes a plurality of operating portions coupled to each of the plurality of core bodies, and makes at least a tip of one core body among the plurality of core bodies selectively project from the opening portion of the casing. A pen pressure detecting portion common to the plurality of core bodies is provided within the casing. When the operating portion is operated to make at least the tip of the one core body project from the opening portion, part of the operated operating portion engages with the pen pressure detecting portion common to the plurality of core bodies, and the pen pressure detecting portion detects a pen pressure applied to the tip projected from the opening portion.

A state determination unit compares an output value obtained by a measuring unit with a reference characteristic value that serves as a reference, counts the number of times an excessive pressure application state occurs in which the output value is determined to be equal to or larger than the reference characteristic value, and determines whether the number of times reaches an upper limit that is set. An alarm output unit outputs an alarm when the state determination unit determines that the number of times the output value is equal to or larger than the reference characteristic value reaches the set upper limit.

Pressure sensors having ring-tensioned membranes are disclosed. A tensioning ring is bonded to a membrane in a manner that results in the tensioning ring applying a tensile force to the membrane, flattening the membrane and reducing or eliminating defects that may have occurred during production. The membrane is bonded to the sensor housing at a point outside the tensioning ring, preventing the process of bonding the membrane to the housing from introducing defects into the tensioned portion of the membrane. A dielectric may be introduced into the gap between the membrane and the counter electrode in a capacitive pressure sensor, resulting in an improved dynamic range.

A MEMS device for use in some embodiments in a microphone or pressure sensor and method of making the same wherein a portion of the package surrounding the acoustic port is deformed either away from, towards, or both away from and towards the interior of the package. By providing this raised area proximate the acoustic port, external debris is less likely to enter the acoustic port and damage the fragile MEMS die. Further, internal attachment material holding the MEMS die to the inside of the package is prevented by flowing into and obscuring the acoustic port. The advantages of this design include longer operation lifetimes for the MEMS device, greater design freedom, and increases in production yield.

A configuration for a capacitive pressure sensor uses a silicon on insulator wafer to create an electrically isolated sensing node across a gap from a pressure sensing wafer. The electrical isolation, small area of the gap, and silicon material throughout the capacitive pressure sensor allow for minimal parasitic capacitance and avoid problems associated with thermal mismatch.

Aspects of the disclosure provide a capacitive pressure sensor. The capacitive pressure sensor can include a first substrate having a first surface and a second surface, a movable plate at a bottom of a first cavity recessed into the substrate from the first surface, and a second substrate bonded to the first substrate over the first surface. A second cavity is formed between the movable plate and the second surface. The second substrate includes a fixed plate disposed over the movable plate to form a capacitor. The second substrate further includes a third cavity between a surface of the fixed plate opposite to the movable plate and a surface of the second substrate opposite to the first substrate.

A MEMS capacitive pressure sensor is provided. The MEMS capacitive pressure sensor includes a substrate having a first region and a second region, and a first dielectric layer formed on the substrate. The capacitive pressure sensor also includes a second dielectric layer having a step surface profile formed on the first dielectric layer, and a first electrode layer having a step surface profile formed on the second dielectric layer. Further, the MEMS capacitive pressure sensor includes an insulation layer formed on the first electrode layer, and a second electrode layer having a step surface profile with a portion formed on the insulation layer in the peripheral region and the rest suspended over the first electrode layer in the device region. Further, the MEMS capacitive pressure sensor also includes a chamber having a step surface profile formed between the first electrode layer and the second electrode layer.