A semiconductor device includes a strain gauge on a substrate, the strain gauge configured to measure a stress of the substrate; and a temperature sensor disposed within the substrate, the temperature sensor being decoupled from the stress of the substrate.

A sensor element that has high measurement precision by providing a resistance-change length ratio corresponding to a direction-specific extension length is provided. The sensor element includes an element body disposed in a sensor body to measure a temperature and a pressure and having a diaphragm deformed based on the temperature or the pressure. Additionally, the sensor element includes pressure-measuring resistors including a second resistor portion and a fourth resistor portion disposed along a diametric direction with respect to a center of an upper surface of the diaphragm and in an extension section on the upper surface of the diaphragm and a first resistor portion and including a third resistor portion disposed outside the second resistor portion or the fourth resistor portion in a compression section on the upper surface of the diaphragm to eliminate a resistance change caused by a pressure-specific temperature change.

A semiconductor device includes a strain gauge on a substrate, the strain gauge configured to measure a stress of the substrate; and a temperature sensor disposed within the substrate, the temperature sensor being decoupled from the stress of the substrate.

An aircraft engine pressure transducer includes a first pressure transducer channel and a second pressure transducer channel. The first pressure transducer channel is configured to sense a pressure of the aircraft engine over a first pressure range and a first temperature range. The second pressure transducer channel is configured to sense the pressure of the aircraft engine over a second pressure range and a second temperature range, the second pressure range being a subset of the first temperature range, and the second temperature range being a subset of the first temperature range.

It is desired to further reduce output errors which are caused by temperature characteristics. A sensor device is provided which includes a sense circuit which outputs a sense signal according to a magnitude of a detected physical quantity, an amplifier circuit which amplifies the sense signal, and a switching unit which switches at least one of a sensitivity of the sense circuit and an offset of the amplifier circuit discontinuously according to whether a temperature measurement value exceeds a threshold value.

Systems and methods for temperature coefficient of offset compensation for a resistance bridge are disclosed. In one aspect, one or more current sources are added in parallel to resistance elements within a resistance bridge. The current source(s) may be selectively switched on and adjusted by a control circuit based on readings from a temperature sensor. In this fashion, the temperature induced variations in the resistance may be canceled or corrected allowing for better performance of the resistance bridge.

An aircraft engine pressure transducer includes a first pressure transducer channel and a second pressure transducer channel. The first pressure transducer channel is configured to sense a pressure of the aircraft engine over a first pressure range and a first temperature range. The second pressure transducer channel is configured to sense the pressure of the aircraft engine over a second pressure range and a second temperature range, the second pressure range being a subset of the first temperature range, and the second temperature range being a subset of the first temperature range.

A semiconductor differential pressure sensor includes a pressure detection element, which is arranged such that its main surface is fixed on a top of a first protrusion with an adhesive while a second protrusion is fitted into its opening. Thus, the pressure detection element is held with high holding power at an exact position. Moreover, the adhesive does not flow into a first pressure introducing path, whereby blocking of the first pressure introducing path is prevented. Furthermore, by providing a recess around the first protrusion, influence of thermal deformation of a resin package on pressure detection characteristics is decreased.

A semiconductor device includes a strain gauge on a substrate, the strain gauge configured to measure a stress of the substrate; and a temperature sensor disposed within the substrate, the temperature sensor being decoupled from the stress of the substrate.

Intelligent temperature and pressure gauge assemblies (52) for use with vessels (24) having pressurized hazard suppression materials therein include temperature and pressure sensors (136, 138) coupled with a digital processor (72) with associated memory for storing empirical temperature and pressure data. The data includes normalized linear temperature-pressure curves consistent with static or slowly changing temperature conditions experienced by the vessels (24), as well as nonlinear temperature-pressure curves consistent with rapidly changing temperature conditions. In use, the assemblies (52) repeatedly sense temperature and pressure conditions of the hazard suppression material and compare sensed values with stored values, and generate an output in conformance with the comparison. In this fashion, the assemblies (52) compensate for rapidly changing temperatures without generating false failure signals.