G01L9/045

PASSIVE TEMPERATURE ERROR COMPENSATION FOR SENSORS
20170205220 · 2017-07-20 ·

A sensor system includes a plurality of strain gauges and a passive compensation circuit. The plurality of strain gauges are configured to provide an output voltage indicative of a sensed pressure using an input voltage. The passive compensation circuit that includes a span resistor, first and second compensation resistors, and a zero offset resistor. The span resistor is connected between an input voltage and the pressure sensor and is configured to control a range of an output voltage for a pressure range of the pressure sensor. The first and second compensation resistors are operatively connected in parallel with the pressure sensor and are configured to control current provided to the pressure sensor. The zero offset resistor is operatively connected between the first and second compensation resistors and the pressure sensor and is configured to control a base value of the output voltage for zero pressure.

COMPENSATED PRESSURE SENSORS
20170160155 · 2017-06-08 ·

Compensated pressure sensor includes a MEMS pressure sensor die having resistors RA and RD connected in series in a first leg of a Wheatstone bridge and resistors RB and RC connected in series in a second leg of the Wheatstone bridge; a first and second fuse; and a first, second, third, fourth, fifth and sixth resistor; wherein: a first end of the first resistor is connected in series with the first leg of the bridge and a first end of the second resistor is connected in series with the second leg of the bridge; the first fuse is connected, at a first end, to a first output of the bridge, and at a second end, to a second end of the third resistor and to a first end of the second fuse; the second fuse is connected, at a second end, to a second output of the bridge; a first end of the third resistor is connected to an input to the bridge and to a first end of the fourth resistor; a second end of the fourth resistor is connected to a second end of the first resistor, a second end of the second resistor and a first end of the sixth resistor; and the fifth resistor is connected, at a first end, to the input to the bridge.

Thermal imaging sensors

A sensor device comprises an array of spaced apart sensor elements disposed in a pattern on a substrate. Each sensor element is connected electrically so that a physical variable measured by each sensor element independently can be recorded and/or displayed by an external instrument. The sensing device may be a temperature sensing device, in which case the sensor elements are temperature sensing elements such as negative temperature coefficient (NTC) thermistors. Alternatively the sensing device may be a strain or pressure sensing device, or an optical imaging device, in which case the sensor elements include piezoresistors or photoresistors. The sensor elements may be connected in a common source or write all-read one configuration, in a common output or write one-read all configuration, or in an array comprising X rows and Y columns, in a write X-read Y configuration.

SENSOR CHIP USED FOR MULTI-PHYSICAL QUANTITY MEASUREMENT AND PREPARATION METHOD THEREOF
20170122783 · 2017-05-04 ·

A sensor chip is used for multi-physical quantity measurement. This sensor chip comprises a substrate and at least two of the following sensors: a temperature sensor, a humidity sensor, or a pressure sensor, which are integrated onto the same substrate, wherein the pressure sensor consists of electrically interconnected resistive elements. The humidity sensor is an interdigitated structure. Thermistor elements are placed around the pressure sensor and the humidity sensor to form a temperature sensor. The temperature sensor has a resistance adjusting circuit. A microcavity is etched on the back of the substrate in a place on the opposite side pressure sensor's location. Also disclosed is a preparation method for a sensor chip used for multi-physical quantity measurement. This multi-physical quantity measurement single chip sensor chip has the advantages of low cost, low power consumption, easy fabrication, and wide applicability.

Compensated pressure sensors
09593994 · 2017-03-14 · ·

Compensated pressure sensor includes a MEMS pressure sensor die having resistors RA and RD connected in series in a first leg of a Wheatstone bridge and resistors RB and RC connected in series in a second leg of the Wheatstone bridge; a first and second fuse; and a first, second third, fourth, fifth and sixth resistor; wherein: a first end of the first resistor is connected in series with the first leg of the bridge and a first end of the second resistor is connected in series with the second leg of the bridge; the first fuse is connected, at a first end, to a first output of the bridge, and at a second end, to a second end of the third resistor and to a first end of the second fuse; the second fuse is connected, at a second end, to a second output of the bridge; a first end of the third resistor is connected to an input to the bridge and to a first end of the fourth resistor; a second end of the fourth resistor is connected to a second end of the first resistor, a second end of the second resistor and a first end of the sixth resistor; and the fifth resistor is connected, at a first end, to the input to the bridge.

Temperature coefficient of offset compensation for resistance bridge
12411049 · 2025-09-09 · ·

Systems and methods for temperature coefficient of offset compensation for a resistance bridge are disclosed. In one aspect, one or more current sources are added in parallel to resistance elements within a resistance bridge. The current source(s) may be selectively switched on and adjusted by a control circuit based on readings from a temperature sensor. In this fashion, the temperature induced variations in the resistance may be canceled or corrected allowing for better performance of the resistance bridge.

Piezo-resistive pressure cell with reduced radiation induced drifts under high-energy radiation

The invention relates to relates to a pressure cell configured for working according to the piezo-resistive principle and for use under high-energy radiation, particularly for use in space, i.e. to work under cosmic radiation. In order to reduce radiation drift effects during operation of the pressure cell, the pressure cell is treated with a radiation hardening procedure comprising an exposing of the cell with a radiation dose up to a saturation range of a radiation drift curve or above.

FLUIDIC TACTILE SENSOR
20250389598 · 2025-12-25 ·

A fluidic tactile sensor includes a core and an elastic skin mechanically coupled to the core. A cell containing a fluid medium is formed in a space defined between opposing surfaces of the core and the elastic skin. A fluid leakage passage is formed in the core and is in fluid communication with the cell. An orifice member is fixed within the fluid leakage passage. The orifice member includes an orifice that is tuned to restrict fluid flow through the fluid leakage passage and limit a fluid leakage rate of the cell.

SENSING DEVICE

A sensing device is disclosed. The sensing device comprises a housing that defines an orifice and a gel positioned within the orifice of the housing and undergoes a change in one or more attributes based on change in temperature or pressure. Further, a membrane is positioned over the orifice and in contact with the gel. The membrane is configured to be positioned in contact with an intravenous (IV) tube carrying media. Further, at least one sensing element is operationally coupled to the gel and detects the change in the one or more attributes of the gel. Thereafter, at least one processing unit is operationally coupled to the at least one sensing element and is configured to determine a temperature output and a pressure output of the media within the IV tube based on the detected change in the one or more attributes of the gel.