An aircraft engine pressure transducer includes a first pressure transducer channel and a second pressure transducer channel. The first pressure transducer channel is configured to sense a pressure of the aircraft engine over a first pressure range and a first temperature range. The second pressure transducer channel is configured to sense the pressure of the aircraft engine over a second pressure range and a second temperature range, the second pressure range being a subset of the first temperature range, and the second temperature range being a subset of the first temperature range.

Certain implementations of the disclosed technology may include systems and methods for extending a frequency response of a transducer. A method is provided that can include receiving a measurement signal from a transducer, wherein the measurement signal includes distortion due to a resonant frequency of the transducer. The method includes applying a complementary filter to the measurement signal to produce a compensated signal, wherein applying the complementary filter reduces the distortion to less than about +/1 dB for frequencies ranging from about zero to about 60% or greater of the resonant frequency. The method further includes outputting the compensated signal.

It is desired to further reduce output errors which are caused by temperature characteristics. A sensor device is provided which includes a sense circuit which outputs a sense signal according to a magnitude of a detected physical quantity, an amplifier circuit which amplifies the sense signal, and a switching unit which switches at least one of a sensitivity of the sense circuit and an offset of the amplifier circuit discontinuously according to whether a temperature measurement value exceeds a threshold value.

The present invention provides a self-heated pressure sensor assembly and method of utilizing the same. The self-heated pressure sensor assembly regulates and maintains the temperature of the pressure sensor, regardless of the external temperature environment, without an external heater as in prior art embodiments. Exemplary embodiments of the pressure sensor assembly incorporate a resistance heater that is built into the sensing chip of the pressure sensor assembly. The pressure sensor assembly also utilizes the resistance of the pressure sensing elements to monitor the temperature of the assembly, which works alongside the resistance heater to maintain a stable temperature within the pressure sensor assembly.

Systems and methods for temperature coefficient of offset compensation for a resistance bridge are disclosed. In one aspect, one or more current sources are added in parallel to resistance elements within a resistance bridge. The current source(s) may be selectively switched on and adjusted by a control circuit based on readings from a temperature sensor. In this fashion, the temperature induced variations in the resistance may be canceled or corrected allowing for better performance of the resistance bridge.

Systems and methods are disclosed for a switched, multiple range sensor system including multiple transducers. In one embodiment, a method is provided that includes receiving and measuring at a first transducer and a second transducer, a pressure to generate a respective first and second pressure signal; amplifying the first and second pressure signals with corresponding first and second fixed-gain amplifier to generate first and second amplified pressure signals; selecting for monitoring, the first or second amplified pressure signal; converting the selected amplified pressure signal to an intermediate digital pressure signal; measuring, at a thermal sensor associated with the selected amplified pressure signal, a temperature; compensating, based on the measured temperature, the intermediate digital pressure signal to generate a compensated digital pressure output signal; and outputting the compensated digital pressure output signal.

A pressure sensing module for an electronic device includes a substrate and a module housing coupled to the substrate. The module housing defines a first chamber and a second chamber. The second chamber is separate from the first chamber. The first chamber is configured to connect to an environment around an electronic device. The second chamber is configured to connect to an internal volume of the housing of the electronic device. A first pressure sensing element is electrically coupled to the substrate and disposed in the first chamber and is operative to detect an external pressure around the electronic device. A second pressure sensing element is electrically coupled to the substrate and disposed in the second chamber and is operative to detect an internal pressure within the electronic device housing.

We disclose herein a CMOS-based sensing device comprising a substrate comprising an etched portion, a first region located on the substrate, wherein the first region comprises a membrane region formed over an area of the etched portion of the substrate, a flow sensor formed within the membrane region and a pressure sensor formed within the membrane region.

A pressure sensor includes a sensor chip and a resin portion. The sensor chip extends in a lengthwise direction and includes a membrane whose length in a thickness direction perpendicular to the lengthwise direction is smaller than another part, and a piezoelectric element provided in the membrane. The sensor chip includes a fixed end that is covered with and fixed to the resin portion, and a free end opposite from the fixed end in the lengthwise direction. The free end is spaced away from the resin portion in the lengthwise direction, and the membrane is located in the free end. A shortest separation distance between the membrane and a part of the resin portion covering the sensor chip is equal to or larger than a length of the sensor chip along a crosswise direction of the sensor chip perpendicular to both the lengthwise direction and the thickness direction.

The present disclosure discloses a bipolar transistor type MEMS pressure sensor and a preparation method thereof. The bipolar transistor type MEMS pressure sensor includes a thin film, a cantilever beam and a bipolar transistor. The bipolar transistor includes a base region, a collector region and an emitter region. The base region is configured to sense deformation of the thin film through a change in resistance value. For the bipolar transistor type MEMS pressure sensor of the disclosure, sensitivity of the sensor can be effectively improved without changing the performance indicators such as the measurement range and nonlinearity. Meanwhile, the bipolar transistor is used as a pressure-sensitive element, so that temperature drift of the sensor can be effectively inhibited.