A pressure sensor device is to be positioned within a material where a mechanical parameter is measured. The pressure sensor device may include an IC having a ring oscillator with an inverter stage having first doped and second doped piezoresistor couples. Each piezoresistor couple may include two piezoresistors arranged orthogonal to one another with a same resistance value. Each piezoresistor couple may have first and second resistance values responsive to pressure. The IC may include an output interface coupled to the ring oscillator and configured to generate a pressure output signal based upon the first and second resistance values and indicative of pressure normal to the IC.

Systems, methods, and apparatus for compensation of a sensor are presented. A method is provided that includes determining a response of a sensor. For example, a temperature response of a pressure sensor may be characterized. In an example implementation, the sensor may be coupled to one or more input terminals, for example, that are configured for connecting to an input voltage source. The sensor may also be coupled to one or more configurable resistor networks. The sensor may further be coupled to one or more output terminals configured for providing an output signal. The method further includes determining one or more compensation resistance values for compensating the determined response of the sensor. The method includes selectively configuring, based at least in part on determining the one or more compensation resistance values, the one or more configurable resistor networks for compensating the response of the sensor.

A pressure sensor, comprising: a substrate having a measuring membrane, and an electrically conductive cover layer, which has electrical contact elements and is electrically isolated from the substrate by an insulating layer. The cover layer is divided in such a manner that two independent measurements of the respective resistance between two contact elements are possible in two regions electrically isolated from one another. The regions of the cover layer serve to shield external electromagnetic influences from the sensor elements of the measuring membrane, to detect damage to the measuring membrane, as well as for determining exact temperature.

A semiconductor pressure sensor for measuring an external pressure exerted on the sensor, comprises a membrane, and a bridge comprising a first and a second resistor pair, arranged on a first resp. second side portion of the membrane. The first resistor pair comprises a first and a second resistor (R1, R2) comprising elongated piezo-resistive strips connected in series, and located closely together, such that R1 and R2 have substantially the same temperature. The sensor has a reduced sensitivity to: a temperature gradient over the membrane, and optionally also a non-uniform stress gradient caused by packaging and a inhomogeneous disturbing electric field perpendicular to the sensor. The piezo-resistive strips of the first and second resistor may be oriented in orthogonal directions of maximum piezo-resistive coefficients. A second bridge may be added outside the membrane, for compensating for package pressure.

Compensated pressure sensor includes a MEMS pressure sensor die having resistors RA and RD connected in series in a first leg of a Wheatstone bridge and resistors RB and RC connected in series in a second leg of the Wheatstone bridge; a first and second fuse; and a first, second, third, fourth, fifth and sixth resistor; wherein: a first end of the first resistor is connected in series with the first leg of the bridge and a first end of the second resistor is connected in series with the second leg of the bridge; the first fuse is connected, at a first end, to a first output of the bridge, and at a second end, to a second end of the third resistor and to a first end of the second fuse; the second fuse is connected, at a second end, to a second output of the bridge; a first end of the third resistor is connected to an input to the bridge and to a first end of the fourth resistor; a second end of the fourth resistor is connected to a second end of the first resistor, a second end of the second resistor and a first end of the sixth resistor; and the fifth resistor is connected, at a first end, to the input to the bridge.

Certain example embodiments include a press sensor element that includes a piezoelectric layer having a first surface in communication with a first layer, the first layer including a first conductive region, where the first conductive region covers at least a central portion the first surface. The sensor element includes a second surface in communication with a second layer, the second layer including a second conductive region, a third conductive region, and a first non-conductive void region separating the second conductive region and the third conductive region. An area of the first conductive region is configured in size relative to an area of the third conductive region to substantially reduce a thermally-induced voltage change between two or more of the first, second, and third conductive regions responsive to a corresponding temperature change of at least a portion of the piezoelectric layer.

The present invention achieves a pressure-sensitive sensor which can detect information on a pressure, a sound pressure, acceleration, gas and the like, with high sensitivity. The pressure-sensitive sensor includes: a cantilever (22); a frame (23) which is provided around the cantilever (22) and holds a base end of the cantilever (22); a gap (24) formed between the cantilever (22) and the frame (23); and a liquid (28) which seals the gap (24).

Compensated pressure sensor includes a MEMS pressure sensor die having resistors RA and RD connected in series in a first leg of a Wheatstone bridge and resistors RB and RC connected in series in a second leg of the Wheatstone bridge; a first and second fuse; and a first, second third, fourth, fifth and sixth resistor; wherein: a first end of the first resistor is connected in series with the first leg of the bridge and a first end of the second resistor is connected in series with the second leg of the bridge; the first fuse is connected, at a first end, to a first output of the bridge, and at a second end, to a second end of the third resistor and to a first end of the second fuse; the second fuse is connected, at a second end, to a second output of the bridge; a first end of the third resistor is connected to an input to the bridge and to a first end of the fourth resistor; a second end of the fourth resistor is connected to a second end of the first resistor, a second end of the second resistor and a first end of the sixth resistor; and the fifth resistor is connected, at a first end, to the input to the bridge.

Aspects of the subject technology relate to electronic devices with pressure sensors having an integrated fluid cavity. The electronic device includes a housing having an opening. The electronic device also includes a pressure sensor disposed within the housing and adjacent to the opening. The pressure sensor includes a substrate and a sensing membrane disposed on the substrate that is configured to obtain pressure data. The pressure sensor also includes a membrane support disposed on the substrate and an outer membrane disposed on the membrane support. The pressure sensor also includes reference cavity formed between the sensing membrane and the substrate. The pressure sensor also includes a fluid cavity disposed between the sensing membrane and the outer membrane. In some aspects, the outer membrane forms a hermetic seal around the fluid cavity. In other aspects, the outer membrane has a stiffness that is lesser than the sensing membrane.

A semiconductor pressure sensor for measuring an external pressure exerted on the sensor, comprising a membrane as part of a semiconductor substrate for being deformed due to the external pressure, a first group of neighboring resistors comprising a sensing resistor pair and a compensating resistor pair and a second group of neighboring resistors comprising a sensing resistor pair and a compensating resistor pair, wherein the sensing resistor pairs are located on or adjacent to the membrane edge and wherein the compensating resistor pairs are located at least partially outside the membrane or on a zero stress zone of the membrane, and wherein the resistors of each resistor pair are orthogonal, and wherein the resistors are connected in a Wheatstone bridge configuration.