A single Micro-Electro-Mechanical System (MEMS) sensor chip is provided, for measuring multiple parameters, referred to as multiple degrees of freedom (DOF). The sensor chip comprises a central MEMS wafer bonded to a top cap wafer and a bottom cap wafer, all three wafer being electrically conductive. The sensor comprises at least two distinct sensors, each patterned in the electrically conductive MEMS wafer and in at least one of the top and bottom cap wafer. Insulated conducting pathways extend from electrical connections on the top or bottom cap wafers, through at least one of the electrically conductive top cap and bottom cap wafers, and through the electrically conductive MEMS wafer, to the sensors, for conducting electrical signals between the sensors and the electrical connections. The two or more distinct sensors are enclosed by the top and bottom cap wafers and by the outer frame of MEMS wafer.

A pressure sensor includes a bearing region and a frame which is spatially separated from the bearing region, wherein a MEMS element of the pressure sensor is produced on the bearing region. When the aforementioned pressure sensor is mounted on a package substrate, the stress from the package substrate or a circuit board can be isolated by a space between the bearing region and the frame to avoid unexpected deformation on the MEMS element.

A semiconductor sensor device is assembled using a lead frame having a flag surrounded by lead fingers. A pressure sensor die is mounted on the flag and electrically connected to the leads. Prior to encapsulation, a pre-formed block of gel material is placed over the sensor region on the die. Encapsulation is performed and mold compound covers the pressure sensor die and the bond wires. Mold compound covering the gel block may be removed. Additionally, a trench may be formed around an upper portion of the gel block so that the lateral sides of the gel block are at least partially exposed.

Sensor packages and methods of assembling a sensor in a sensor package are provided. A preferred embodiment comprises: a base including a sensor coupled to the base wherein the base has at least one electrical connection location and a first mechanical mating interface in the shape of an arc; an electronics package with at least one electrical connection location; and a ring coupled between the base and the electronics package wherein the ring electrically connects the at least one electrical connection location on the base and the at least one electrical connection location on the electronics package and wherein the base has a second mechanical mating interface in the shape of an arc that is reciprocal to the first mating interface.

Monolithic integration of microelectromechanical systems (MEMS) sensors with complementary oxide semiconductor (CMOS) electronics for pressure sensors is a very challenging task. This is primarily due to the requirement for a very high quality thin diaphragm to provide the pressure dependent MEMS deformation that can be sensed and, when seeking absolute rather than relative pressure sensors, a sealed reference cavity. Accordingly, a new manufacturing process is established based upon back-etching and bonding of a monolithic absolute silicon carbide (SiC) capacitive pressure sensor. Beneficially, the process embeds the critical features of the MEMS within a shallow trench formed within the silicon substrate and then processing the CMOS circuit. The process further benefits as it maintains that those elements of the MEMS element fabrication process that are CMOS compatible are implemented concurrently with those CMOS steps as well as the metallization steps. However, the CMOS incompatible processing is partitioned discretely.

A hermetically-sealed universal pressure sensor comprises a MEMS disk, a compensate disk, and an optional interconnect ring. The MEMS disk has one or more MEMS dies that can convert ambient pressures to electrical signals, which is processed and compensated at an integrated circuit on the compensate disk. The interconnect ring can optionally provide electrical connections and hermetic seal properties between the MEMS disk and the compensate disk.

This disclosure provides example methods, devices and systems associated with flat covered leadless pressure sensor assemblies suitable for operation in extreme environments. In one embodiment, a system may comprise a semiconductor substrate having a first side and a second side; a diaphragm disposed on the first side of the semiconductor substrate; a first cover coupled to the first side of the semiconductor substrate such that it overlays at least the diaphragm, wherein a pressure applied at the first cover is transferred to the diaphragm; and a sensing element disposed on the second side of the semiconductor substrate, wherein the sensing element is used to measure the pressure.

The invention relates to a method for producing a pressure sensor, comprising the following steps: assembling a support substrate with a deformable membrane on which strain gauges have been deposited, wherein the deformable membrane comprises a thinned area at the center thereof, the support substrate is disposed on top of the deformable membrane, the support substrate comprises an upper surface and a lower surface in contact with the deformable membrane, and the support substrate also comprises lateral recesses arranged on top of the strain gauges and a central recess arranged on top of the thinned area of the membrane, so as to obtain a micromechanical structure; and, once the assembly has been obtained, depositing, in a single step, at least one conductive material on the upper surface of the support and in the lateral recesses of the support, said conductive material extending into the recesses in order to be in contact with the strain gauges so as to form electrical contacts in contact with the strain gauges.

An embodiment for manufacturing electronic devices is proposed. The embodiment includes the following phases: a) forming a plurality of chips in a semiconductor material wafer including a main surface; each chip includes respective integrated electronic components and respective contact pads facing the main surface; said contact pads are electrically coupled to the integrated electronic components; b) attaching at least one conductive ribbon to at least one contact pad of each chip; c) covering the main surface of the semiconductor material wafer and the at least one conductive ribbon with a layer of plastic material; d) lapping an exposed surface of the layer of plastic material to remove a portion of the plastic material layer at least to uncover portions of the at least one conductive ribbon, and e) sectioning the semiconductor material wafer to separate the chips.

This disclosure provides example methods, devices and systems associated with flat covered leadless pressure sensor assemblies suitable for operation in extreme environments. In one embodiment, a system may comprise a semiconductor substrate having a first side and a second side; a diaphragm disposed on the first side of the semiconductor substrate; a first cover coupled to the first side of the semiconductor substrate such that it overlays at least the diaphragm, wherein a pressure applied at the first cover is transferred to the diaphragm; and a sensing element disposed on the second side of the semiconductor substrate, wherein the sensing element is used to measure the pressure.