Patent classifications
G01L19/146
Piezoresistive sensor with spring flexures for stress isolation
A MEMS device includes a backing wafer with a support portion and central back plate connected to the support portion with spring flexures, a diaphragm wafer with a support portions and a sensing portion connected to the support portion with spring flexures, a passivation layer on the diaphragm, and a topping wafer. The device allows for stress isolation of a diaphragm in a piezoresistive device without a large MEMS die.
Pressure sensor
A pressure sensor includes a sensor assembly and an evaluation unit. The; sensor assembly includes a sensor and an electrode arrangement. The sensor is configured to generate signals under the action of a pressure profile. The electrode arrangement is configured to transmit the signals to the evaluation unit. The evaluation unit includes an electric circuit board. The electric circuit board includes a base material that is electrically insulating with a specific volume resistance that is at least equal to 10.sup.15 cm at room temperature. The electric circuit board includes a high temperature region facing the sensor assembly and a normal temperature region that faces away from the sensor assembly.
Pressure sensor
A versatilely usable pressure sensor is described, which has a ceramic pressure measuring cell (5) clamped in the pressure sensor with interpositioning of a seal (1) outwardly sealing an interior of the pressure sensor and loadable via an opening (3) of the pressure sensor with a pressure (p) to be measured, and whose seal (1) comprises a film (21) of a thermoplastic material, especially polytetrafluoroethylene (PTFE), clamped (in an axial direction and extending perpendicularly to planes of the sealing surfaces (25, 27)) between a form-retaining, planar sealing surface (25) of the pressure measuring cell (5) and a form-retaining sealing surface (27, 27) of a counterbody (19, 19) outwardly surrounding the opening (3), characterized in that the film (21) includes a first film segment (23), which is clamped between the sealing surface (25) of the pressure measuring cell (5) and the sealing surface (27, 27) of the counterbody (19), and the film (21) includes a second film segment (29), which extends over a lateral surface (31) of the counterbody (19, 19) different from the sealing surface (27, 27), and which is connected with the counterbody (19, 19) on the lateral surface (31) via a connecting layer (33) of a material serving as bonding agent for the material of the film (21), especially perfluoroalkoxy-polymer (PFA), arranged on the lateral surface (31).
METHOD FOR PRODUCING A STRESS-DECOUPLED MICROMECHANICAL PRESSURE SENSOR
A method for producing a micromechanical pressure sensor. The method includes: providing a MEMS wafer having a silicon substrate and a first cavity developed therein underneath a sensor diaphragm; providing a second wafer; bonding the MEMS wafer to the second wafer; and exposing a sensor core from the rear side; a second cavity being formed in the process between the sensor core and the surface of the silicon substrate, and the second cavity being developed with the aid of an etching process which is carried out using etching parameters that are modified in a defined manner.
Device for detecting mechanical decoupling pressure
A pressure detection device including a mount whereon a pressure sensor is attached which comprises a membrane which has a surface intended to be subjected to a pressurized fluid and which is so arranged as to elastically deform according to pressure, and means for determining the deformation of the membrane along an axis normal to a mid-plane of the membrane in the rest state. The membrane is supported by a frame connected to the mount by a mechanical decoupling structure in order to isolate the membrane from stress resulting from a differential thermal expansion between the frame and the mount, with the membrane and the frame being made of the same material.
PRESSURE MEASURING DEVICE
A pressure measuring device comprises a capacitive pressure measuring cell, a process connector including a retaining element, a housing mounted on the process connector, and a sealing element arranged between an inwardly projecting region of the retaining element and the pressure measuring cell. The retaining element is configured with a cap with a base area portion and an outer area portion bent over with respect thereto and fitted over an end face of the process connector. The retaining element is in a material-bonded and/or form-fit manner connected to the process connector exclusively in the bent-over outer area portion so that the base area portion assumes a resilient property.
PACKAGED MEMS DEVICE WITH DISTURBANCE COMPENSATION
Disclosed is an apparatus which has, among other things, a MEMS device with a first measurement arrangement for capturing a measurement variable (X.sub.1) based on a physical variable, which has a useful variable component (N.sub.1) and a first disturbance variable component (Z.sub.1), and a second measurement arrangement for capturing a second disturbance variable component (Z.sub.2). The apparatus furthermore has a disturbance compensation circuit which is configured to combine the second disturbance variable component (Z.sub.2) and the measurement variable (X.sub.1) with one another and to obtain a disturbance-compensated measurement variable (X.sub.comp). The MEMS device is arranged in a housing, wherein the MEMS device is in immediate mechanical contact with the housing by way of at least 50% of a MEMS device surface.
METHOD FOR PRODUCING A DEVICE FOR DETECTING AT LEAST ONE PROPERTY OF A FLUID MEDIUM IN A MEASURING CHAMBER
A device for detecting at least one property of a fluid medium, and a method for its production. The method includes a) providing at least one housing, the housing having at least one electrical contact; introducing at least one sensor element for detecting the property into the housing; c) providing at least one pressure-pipe tube, the pressure-pipe tube including at least one contacting element; d) bringing the contacting element into contact with the sensor element in such a way that an electrical connection is established between the contacting element and the sensor element; and e) introducing at least one circuit substrate into the housing in such a way that the circuit substrate is electrically connected to the electrical contact of the housing and to the sensor element, the housing and the pressure-pipe tube being produced as separate components.
Reduced stress pressure sensor
A pressure sensor comprises a first substrate containing a processing circuit integrated thereon and a cap attached to the first substrate. The cap includes a container, a holder, and one or more suspension elements for suspending the container from the holder. The container includes a cavity and a deformable membrane separating the cavity and a port open to an outside of the pressure sensor. The container is suspended from the holder such that the deformable membrane faces the first substrate and such that a gap is provided between the deformable membrane and the first substrate which gap contributes to the port. Sensing means are provided for converting a response of the deformable membrane to pressure at the port into a signal capable of being processed by the processing circuit.
Integrated SOI pressure sensor having silicon stress isolation member
In one embodiment a pressure sensor is provided. The pressure sensor includes a housing having an input port configured to allow a media to enter the housing. A support is mounted within the housing, the support defining a first aperture extending therethrough. A stress isolation member is mounted within the first aperture of the support, the stress isolation member defining a second aperture extending therethrough, wherein the stress isolation member is composed of silicon. sensor die bonded to the stress isolation member. The sensor die includes a silicon substrate having an insulator layer on a first side of the silicon substrate; and sensing circuitry disposed in the insulator layer on the first side, wherein a second side of the silicon substrate is exposed to the second aperture of the stress isolation member and the second side is reverse of the first side.