A system includes a memory and at least one processing device operatively coupled to the memory to facilitate an etch recipe development process by performing a number of operations. The operations include receiving a request to initiate an iteration of an etch process using an etch recipe to etch a plurality of materials each located at a respective one of a plurality of reflectometry measurement points, obtaining material thickness data for each of the plurality of materials resulting from the iteration of the etch process, and determining one or more etch parameters based on the material thickness data.

An apparatus includes a base component and collimators housed within the base component. The collimators correspond to collection cylinders for sampling optical emission spectroscopy (OES) signals with respect to locations of a wafer in an etch chamber. The apparatus further includes a guide, operatively coupled to the plurality of collimators, to guide the sampling of the OES signals along paths for sampling the OES signals.

A plasma lamp for use in a broadband plasma source of an inspection tool is disclosed. The plasma lamp includes a plasma bulb configured to contain a gas and generate a plasma within the plasma bulb. The plasma bulb is formed from a material at least partially transparent to illumination from a pump laser and at least a portion of broadband radiation emitted by the plasma. The plasma bulb includes a conical pocket. The conical pocket is configured to disrupt a plume rising from the plasma.

An optical inspection system that may include an illumination optics configured to generate an illumination light beam and to illuminate a sample with the illumination light beam; at least one collection optics configured to collect light from the sample; at least one detector configured to detect at least one detected light beam outputted from the at least one collection optics; multiple polarizers that are configured to (a) set a polarization of the illumination light beam by selectively introducing, under a control of the control unit, at least one illumination optics polarization change, and (b) set a polarization of the at least one detected light beam by selectively introducing, under a control of the control unit, at least one collection optics polarization change. The multiple polarizers may include one or more illumination half-wave plates, one or more quarter-wave plates, and one or more inhomogeneous polarizers.

A method for evaluating a structure is disclosed, the structure including a base material containing at least one kind of metal selected from the group consisting of hydrogen storage metals and hydrogen storage alloys, an intermediate layer provided on the base material and stacked alternately with a first layer containing low work function substances relatively lower in work function than the metal and a second layer containing the metal, and a surface layer provided on the intermediate layer and containing the metal, wherein the method includes measuring a change in polarization between incident light and reflected light by irradiating the surface layer with light, while holding the structure at a predetermined temperature, and comparing a measurement value of the change in polarization with a threshold of a change in polarization of a structure prepared in advance and evaluating a soundness of the structure based on comparison results.

The invention discloses a rapid measurement method for an ultra-thin film optical constant, which includes following steps: S1: using a p-light amplitude reflection coefficient r.sub.p and an s-light amplitude reflection coefficient r.sub.s of an incident light irradiating to an ultra-thin film to be measured to express an amplitude reflection coefficient ratio ρ of the ultra-thin film: $\rho =\frac{r_p}{r_s};$
S2: performing a second-order Taylor expansion to $\rho =\frac{r_p}{r_s}$
at d.sub.f=0 while taking 2πd.sub.f/λ as a variable to obtain a second-order approximation form; S3: performing merging, simplifying and substituting processing to the second-order approximation form for transforming the same into a one-variable quartic equation; S4: solving the one-variable quartic equation to obtain a plurality of solutions of the optical constant of the ultra-thin film, and obtaining a correct solution through conditional judgment, so as to achieve the rapid measurement for the ultra-thin film optical constant.

A method for measuring an element concentration of a material includes: a material sample is irradiated with first electromagnetic waves; second electromagnetic waves radiated by the material sample are obtained under the action of the first electromagnetic waves; material property parameters of the material sample are determined by detecting the second electromagnetic waves; and an element concentration of the material sample is determined according to the material property parameters.

A system is provided. The system has a femtosecond oscillator to generate pulses used for pump and probe beams. A photonic crystal fiber is disposed in a path of the probe beam and produces pulses for a chirped probe beam. A high NA objective receives the pump and the chirped probe beam, redirects the received beams through a dielectric substrate towards an interface between a sample and the dielectric substrate to cause total internal reflection (TIR) at the sample-substrate interface, and produces corresponding evanescent waves in a portion of the sample adjacent to the sample-substrate interface, and collects a backward-propagating beam of pulses of responsive light. The portion of the sample illuminated by the evanescent waves emits responsive light. The dielectric substrate is transparent to the responsive light, the pump and the chirped probe beam. An image is produced having a specific image size using the received backward-propagating beam.

Provided is a pupil ellipsometry measurement apparatus configured to measure an object, the pupil ellipsometry measurement apparatus including a stage configured to support the object to be measured, a light source unit configured to generate and output light, an irradiation optical system configured to focus the light from the light source unit on the object, a first detector configured to detect an image of reflected light from the object on an imaging plane, a self-interference generator (SIG) configured to generate self-interference with respect to the reflected light, a second detector configured to detect a hologram image of interference light of the SIG on a pupil plane, and a processor configured to reconstruct reflectance information based on the hologram image, and measure the object.

A measurement system is disclosed. A measurement system includes an illumination module, a mirror module, a stage, and a detector. The illumination module includes a light source, an optical fiber, a collimating mirror, a polarization state generator, a beam control mirror, and a relay mirror. The mirror module includes a first beam splitter and a reflective objective mirror. The beam control mirror is movable to relay light received from the polarization state generator to various positions on the relay mirror.