The present disclosure is directed to a system and a method for hydride generation. In some embodiments, the system includes an assembly for introducing hydride generation reagents into a mixing path or mixing container, where the assembly includes first chamber configured to contain a first hydride generation reagent and a second chamber configured to contain a second hydride generation reagent. A first plunger is configured to translate within the first chamber and cause a displacement of the first hydride generation reagent, and a second plunger is configured to translate within the second chamber and cause a displacement of the second hydride generation reagent. The assembly further includes base coupling the first plunger and the second plunger together.

A plasma computer numerically controlled (CNC) cutting machine is controlled by a computer such as a personal computer capable running an operating system and software programs. In an embodiment, the computer executes a CNC program to control movement of a plasma torch to cut parts from a workpiece while a spectrometer determines an emissions spectra of light emitted as the torch cuts the workpiece. The spectrometer cooperates with software running on a computer to analyze the metal as it is being cut by the CNC cutting machine and determine a composition. In embodiments, the composition is compared to an expected composition and saved in a database with identifying information; in a particular embodiment the database is queried to provide identifying information of metal having similar composition to the workpiece.

Systems and methods are described for integrated decomposition and scanning of a semiconducting wafer, where a single chamber is utilized for decomposition and scanning of the wafer of interest.

Systems and methods are described for integrated decomposition and scanning of a semiconducting wafer, where a single chamber is utilized for decomposition and scanning of the wafer of interest.

The present invention relates to a process for the detection and adsorption of arsenic from ground water and industrial waste water using lanthanide doped nanoparticles. More particularly, the present invention provides a process for the detection and adsorption arsenic in ppm level using Eu.sub.0.05Y.sub.0.95PO.sub.4 nanoparticles.

The present invention relates to a process for the detection and adsorption of arsenic from ground water and industrial waste water using lanthanide doped nanoparticles. More particularly, the present invention provides a process for the detection and adsorption arsenic in ppm level using Eu.sub.0.05Y.sub.0.95PO.sub.4 nanoparticles.

A system can include a sampler assembly configured to collect a viscous sample at a first location. In implementations, the viscous sample includes concentrated sulfuric acid (e.g., greater than about 75% H.sub.2SO.sub.4). The system can also include a valve coupled with the sampler assembly for receiving the viscous sample. The valve is configured to couple with a source of a diluent and a sample transfer line. The system further includes a pump coupled with the valve for injecting the diluent into the sample transfer line along with the viscous sample to dilute the viscous sample and transport the diluted sample to a second location remote from the first location via the sample transfer line. In implementations, the sample transfer line is at least approximately two meters in length.

An ICP emission spectrometer is schematically configured to include an inductively coupled plasma generation unit, a light condensing unit, a spectroscope, a detector, and a controller. The detector includes a photomultiplier and has a detector controller and an input unit. The photomultiplier has voltage dividing resistors, which make an amplification factor not to become constant immediately due to a change in an application voltage applied to the photomultiplier, but the detector controller controls an idle voltage and an idle voltage application time so that a multiplication factor becomes constant, during a period from when analysis conditions are input to the input unit in advance until a sample containing an analysis-targeted element is introduced into the inductively coupled plasma generation unit.

An ICP emission spectrometer is schematically configured to include an inductively coupled plasma generation unit, a light condensing unit, a spectroscope, a detector, and a controller. The detector includes a photomultiplier and has a detector controller and an input unit. The photomultiplier has voltage dividing resistors, which make an amplification factor not to become constant immediately due to a change in an application voltage applied to the photomultiplier, but the detector controller controls an idle voltage and an idle voltage application time so that a multiplication factor becomes constant, during a period from when analysis conditions are input to the input unit in advance until a sample containing an analysis-targeted element is introduced into the inductively coupled plasma generation unit.

Systems and methods are described to determine whether a sample transmitted through a transfer line from a remote sampling system contains a suitable sample to analyze by an analysis system. A system embodiment includes, but is not limited to, a sample receiving line configured to receive a liquid segment a first detector configured to detect the liquid segment at a first location in the sample receiving line; a second detector configured to detect the liquid segment at a second location in the sample receiving line downstream from the first location; and a controller configured to register a continuous liquid segment in the sample receiving line when the first detector and the second detector match detection states prior to the controller registering a change of state of the first detector.