Patent classifications
G01N21/93
Method for monitoring the operational state of a surface inspection system for detecting defects on the surface of semiconductor wafers
The operational state of a surface inspection system for detecting defects on the surface of semiconductor wafers is monitored by: providing a reference wafer having defects of a particular number, size, and density on an examination surface; conducting a reference inspection of the reference wafer and at least one control inspection of the reference wafer by the surface inspection system, the position and size of defects on the examination surface being measured; identifying defects which, because of their position, are regarded as common defects of the reference inspection and of the control inspection; for each common defect, determining a size difference obtained from comparing its size from the reference inspection and from the control inspection; and assessing the operational state of the surface inspection system on the basis of the size differences.
Method, apparatus, and computer program product for controlling components of a detection device
A method, computer program product, and apparatus are provided for controlling components of a detection device. The device may detect turbidity of liquid with sensors such as a density sensor and/or nephelometric sensor. A light modulation pattern may reduce or eliminate interference in sensor readings. Readings may be performed during off cycles of an illumination light to reduce interference but to provide improved visibility of a tube. Dark and light sensor readings may be performed with an emitter respectively off or on to account for ambient light in subsequent readings. Readings from the density sensor and/or nephelometric sensor may be used to calculate McFarland values. The device may be zeroed based on an emitter level that results in a sensor reading satisfying a predetermined criterion.
Method, apparatus, and computer program product for controlling components of a detection device
A method, computer program product, and apparatus are provided for controlling components of a detection device. The device may detect turbidity of liquid with sensors such as a density sensor and/or nephelometric sensor. A light modulation pattern may reduce or eliminate interference in sensor readings. Readings may be performed during off cycles of an illumination light to reduce interference but to provide improved visibility of a tube. Dark and light sensor readings may be performed with an emitter respectively off or on to account for ambient light in subsequent readings. Readings from the density sensor and/or nephelometric sensor may be used to calculate McFarland values. The device may be zeroed based on an emitter level that results in a sensor reading satisfying a predetermined criterion.
THERMAL CAMERA CALIBRATION PALETTE
An apparatus including a palette body, a plurality of heat distribution plates mounted on the body and positioned adjacent each other, a plurality of insulators positioned intermediate the adjacently positioned heat distribution plates, and a plurality of thermal camera calibration reference swatches including a near-ideal blackbody reference swatch, a diffuse reflective reference swatch, and a first material of the device under testing reference swatch, each reference swatch being mounted on a corresponding one of the heat distribution plates and thermally insulated from other reference swatches by the insulators.
Self-Calibrating Optical Detector
The present disclosure includes systems and methods for calibration of an optical sensor package, including setting an initial detection threshold of a detector, gradually increasing a power level of a signal generator that is in communication with a detector to cause a detected power at the detector to exceed the initial detection threshold, storing in a memory a first power level of the signal generator at which the detected power at the detector exceeds the initial detection threshold, and adjusting the initial detection threshold of the detector to an adjusted detection threshold to include a detection buffer amount within the adjusted detection threshold.
Material property inspection apparatus
A material property inspection apparatus includes a conveyance unit, a light source, an irradiation unit, a light receiving unit, a signal detection unit, a material property value input unit, an inspection set value input unit, and a processing unit. The processing unit calculates a relation equation between the material property value from the material property values of the plurality of test pieces and the light intensity of the transmitted light or the reflected light of respective test pieces, calculates the material property value of the inspected object from the light intensity of the transmitted light or the reflected light detected by the signal detection unit and the relation equation, compares the calculated material property value of the inspected object with the inspection set value inputted from the inspection set value input unit, and determines the quality of the inspected object.
Apparatus, techniques, and target designs for measuring semiconductor parameters
In one embodiment, apparatus and methods for determining a parameter of a target are disclosed. A target having an imaging structure and a scatterometry structure is provided. An image of the imaging structure is obtained with an imaging channel of a metrology tool. A scatterometry signal is also obtained from the scatterometry structure with a scatterometry channel of the metrology tool. At least one parameter, such as overlay error, of the target is determined based on both the image and the scatterometry signal.
Apparatus, techniques, and target designs for measuring semiconductor parameters
In one embodiment, apparatus and methods for determining a parameter of a target are disclosed. A target having an imaging structure and a scatterometry structure is provided. An image of the imaging structure is obtained with an imaging channel of a metrology tool. A scatterometry signal is also obtained from the scatterometry structure with a scatterometry channel of the metrology tool. At least one parameter, such as overlay error, of the target is determined based on both the image and the scatterometry signal.
METHODS AND SYSTEMS FOR GENERATING CALIBRATION DATA FOR WAFER ANALYSIS
Disclosed herein is a computer-implemented method for generating calibration data usable for analysis of a sample. The method includes: (i) identifying targets in an image frame pertaining to a scanned area of a sample; (ii) computing displacements of the targets relative to positions thereof as given by, or derived from, reference data of the scanned area; (iii) based at least on the computed target displacements, determining values of coordinate transformation parameters (CTPs) relating coordinates of the image frame to coordinates of the scanned area as given by, or derived from, the reference data; and (iv) using at least the CTPs to obtain displacements of multiple segments in the image frame, thereby generating a displacement mapping of the image frame or at least a part thereof.
METHODS AND SYSTEMS FOR GENERATING CALIBRATION DATA FOR WAFER ANALYSIS
Disclosed herein is a computer-implemented method for generating calibration data usable for analysis of a sample. The method includes: (i) identifying targets in an image frame pertaining to a scanned area of a sample; (ii) computing displacements of the targets relative to positions thereof as given by, or derived from, reference data of the scanned area; (iii) based at least on the computed target displacements, determining values of coordinate transformation parameters (CTPs) relating coordinates of the image frame to coordinates of the scanned area as given by, or derived from, the reference data; and (iv) using at least the CTPs to obtain displacements of multiple segments in the image frame, thereby generating a displacement mapping of the image frame or at least a part thereof.