Provided are an inspection device that detects with high precision and classifies surface unevenness, step batching, penetrating blade-shaped dislocations, penetrating spiral dislocations, basal plane dislocations, and stacking defects formed in an SiC substrate and an epitaxial layer; and a system. In the inspection device using charged particle beams, a device is used that has an electrode provided between a sample and an objective lens, the device applies a positive or negative voltage to the electrode and obtains images. A secondary electron emission rate is measured and energy EL and EH for the charged particles are found. A first image is obtained using the EH and positive potential conditions. A second image is obtained using the EL and negative potential conditions. A third image is obtained at the same position as the second image, and by using the EL and positive potential conditions.

A geological analysis system, device, and method using x-ray fluorescence and spectroscopy are provided. The geological analysis system includes a sample tray which holds the geological sample materials, and sensors including an X-ray fluorescence (XRF) unit and spectrometer. The sample tray includes chambers formed in an upper surface, ports, and passages, each providing communication between an interior of a chamber and an interior of a port. The ports are configured to be attachable to vials. The system positions the sample tray with respect to the sensors for sensing one or more properties of geological sample materials in the sample tray.

A geological analysis system, device, and method using x-ray fluorescence and spectroscopy are provided. The geological analysis system includes a sample tray which holds the geological sample materials, and sensors including an X-ray fluorescence (XRF) unit and spectrometer. The sample tray includes chambers formed in an upper surface, ports, and passages, each providing communication between an interior of a chamber and an interior of a port. The ports are configured to be attachable to vials. The system positions the sample tray with respect to the sensors for sensing one or more properties of geological sample materials in the sample tray.

Determining a property of a layer of an integrated circuit (IC), the layer being formed over an underlayer, is implemented by performing the steps of: irradiating the IC to thereby eject electrons from the IC; collecting electrons emitted from the IC and determining the kinetic energy of the emitted electrons to thereby calculate emission intensity of electrons emitted from the layer and electrons emitted from the underlayer calculating a ratio of the emission intensity of electrons emitted from the layer and electrons emitted from the underlayer; and using the ratio to determine material composition or thickness of the layer. The steps of irradiating IC and collecting electrons may be performed using x-ray photoelectron spectroscopy (XPS) or x-ray fluorescence spectroscopy (XRF).

Determining a property of a layer of an integrated circuit (IC), the layer being formed over an underlayer, is implemented by performing the steps of: irradiating the IC to thereby eject electrons from the IC; collecting electrons emitted from the IC and determining the kinetic energy of the emitted electrons to thereby calculate emission intensity of electrons emitted from the layer and electrons emitted from the underlayer calculating a ratio of the emission intensity of electrons emitted from the layer and electrons emitted from the underlayer; and using the ratio to determine material composition or thickness of the layer. The steps of irradiating IC and collecting electrons may be performed using x-ray photoelectron spectroscopy (XPS) or x-ray fluorescence spectroscopy (XRF).

A method of calculating a thickness of a graphene layer and a method of measuring a content of silicon carbide, by using X-ray photoelectron spectroscopy (XPS), are provided. The method of calculating the thickness of the graphene layer, which is directly grown on a silicon substrate, includes measuring the thickness of the graphene layer directly grown on the silicon substrate, by using a ratio between a signal intensity of a photoelectron beam emitted from the graphene layer and a signal intensity of a photoelectron beam emitted from the silicon substrate.

A method of calculating a thickness of a graphene layer and a method of measuring a content of silicon carbide, by using X-ray photoelectron spectroscopy (XPS), are provided. The method of calculating the thickness of the graphene layer, which is directly grown on a silicon substrate, includes measuring the thickness of the graphene layer directly grown on the silicon substrate, by using a ratio between a signal intensity of a photoelectron beam emitted from the graphene layer and a signal intensity of a photoelectron beam emitted from the silicon substrate.

A detector module for use in an apparatus for analysing a specimen is provided. The detector module comprises a plurality of X-ray sensor elements and one or more electron sensor elements, and is adapted to be positioned below a polepiece of an electron beam assembly of the apparatus from which an electron beam generated by the assembly emerges towards a specimen in use, such that the detector module receives X-rays and backscattered electrons generated by interaction between the electron beam and the specimen. Each of the plurality of X-ray sensor elements is configured to monitor energies of individual received X-ray photons, and the plurality of X-ray sensor elements have a total active area greater than 20 mm.sup.2. The radial extent of the detector module with respect to the electron beam axis in use is less than 10 mm for at least a first portion of the detector module. An apparatus and method for analysing a specimen are also provided.

A detector module for use in an apparatus for analysing a specimen is provided. The detector module comprises a plurality of X-ray sensor elements and one or more electron sensor elements, and is adapted to be positioned below a polepiece of an electron beam assembly of the apparatus from which an electron beam generated by the assembly emerges towards a specimen in use, such that the detector module receives X-rays and backscattered electrons generated by interaction between the electron beam and the specimen. Each of the plurality of X-ray sensor elements is configured to monitor energies of individual received X-ray photons, and the plurality of X-ray sensor elements have a total active area greater than 20 mm.sup.2. The radial extent of the detector module with respect to the electron beam axis in use is less than 10 mm for at least a first portion of the detector module. An apparatus and method for analysing a specimen are also provided.

A method for analyzing the quality of a thin layer surface of PCB includes steps of taking a region to be tested from the PCB as a sample by scissors or an automatic sampler; performing gold spraying treatment; fixing a sample to be tested onto a metal sample platform, and then mounting the sample platform on the inclined surface of a test platform; depositing a first protective layer by an electron beam; after deposition with the electron beam is completed, depositing a second protective layer by a focused ion beam; adjusting the angle of inclination of the test platform to ensure that the surface of the sample can be cut perpendicular to the direction of the focused ion beam; and finally adjusting angle of inclination of the sample to perform observation. The method can avoid influences of chemical solutions, mechanical stress, and impurity contamination in the sample preparation process.