A method of calculating a thickness of a graphene layer and a method of measuring a content of silicon carbide, by using X-ray photoelectron spectroscopy (XPS), are provided. The method of calculating the thickness of the graphene layer, which is directly grown on a silicon substrate, includes measuring the thickness of the graphene layer directly grown on the silicon substrate, by using a ratio between a signal intensity of a photoelectron beam emitted from the graphene layer and a signal intensity of a photoelectron beam emitted from the silicon substrate.

A method of calculating a thickness of a graphene layer and a method of measuring a content of silicon carbide, by using X-ray photoelectron spectroscopy (XPS), are provided. The method of calculating the thickness of the graphene layer, which is directly grown on a silicon substrate, includes measuring the thickness of the graphene layer directly grown on the silicon substrate, by using a ratio between a signal intensity of a photoelectron beam emitted from the graphene layer and a signal intensity of a photoelectron beam emitted from the silicon substrate.

The present invention is intended to provide improved patterned X-ray emitting targets as well as X-ray sources that include patterned X-ray emitting targets as well as X-ray reflectance scatterometry (XRS) systems and also including X-ray photoelectron spectroscopy (XPS) systems and X-ray fluorescence (XRF) systems which employ such X-ray emitting targets.

The present invention is intended to provide improved patterned X-ray emitting targets as well as X-ray sources that include patterned X-ray emitting targets as well as X-ray reflectance scatterometry (XRS) systems and also including X-ray photoelectron spectroscopy (XPS) systems and X-ray fluorescence (XRF) systems which employ such X-ray emitting targets.

A method of calculating a thickness of a graphene layer and a method of measuring a content of silicon carbide, by using X-ray photoelectron spectroscopy (XPS), are provided. The method of calculating the thickness of the graphene layer, which is directly grown on a silicon substrate, includes measuring the thickness of the graphene layer directly grown on the silicon substrate, by using a ratio between a signal intensity of a photoelectron beam emitted from the graphene layer and a signal intensity of a photoelectron beam emitted from the silicon substrate.

A method of calculating a thickness of a graphene layer and a method of measuring a content of silicon carbide, by using X-ray photoelectron spectroscopy (XPS), are provided. The method of calculating the thickness of the graphene layer, which is directly grown on a silicon substrate, includes measuring the thickness of the graphene layer directly grown on the silicon substrate, by using a ratio between a signal intensity of a photoelectron beam emitted from the graphene layer and a signal intensity of a photoelectron beam emitted from the silicon substrate.

Disclosed is a nondestructive inspection system includes: a radiation source system generating different types of radiations and irradiating the generated different types of radiations toward an inspection object; a detector system detecting each of the radiations transmitted through the inspection object; a transfer system varying a position of the inspection object such that the radiations generated by the radiation source system are irradiated to the inspection object; and an image system generating an image regarding the inspection object on the basis of a detection result from the detector system, wherein the radiation source system comprises: an electron gun generating an electron beam; an electron accelerator accelerating the electron beam generated by the electron gun; and a target system selectively generating at least one of various types of radiations according to variables when the electron beam accelerated by the electron accelerator is irradiated thereto.

Disclosed is a nondestructive inspection system includes: a radiation source system generating different types of radiations and irradiating the generated different types of radiations toward an inspection object; a detector system detecting each of the radiations transmitted through the inspection object; a transfer system varying a position of the inspection object such that the radiations generated by the radiation source system are irradiated to the inspection object; and an image system generating an image regarding the inspection object on the basis of a detection result from the detector system, wherein the radiation source system comprises: an electron gun generating an electron beam; an electron accelerator accelerating the electron beam generated by the electron gun; and a target system selectively generating at least one of various types of radiations according to variables when the electron beam accelerated by the electron accelerator is irradiated thereto.

Material analysis device (100) comprising a neutron generator (10) for emitting neutrons towards a material to be analysed in pulsed mode; an alpha particle detector (13) for locating the neutrons emitted in a given solid angle by detecting alpha particles associated with these neutrons; at least one gamma ray detector (14) for measuring energy of gamma photons generated by interaction of the neutrons emitted in the given solid angle with the material to be analysed; at least two Compton cameras (15), each for measuring energy of the gamma photons generated by interaction of the neutrons with the material to be analysed and for calculating an incidence cone of these gamma photos; and an electronic circuit adapted for three-dimensionally mapping the presence of at least one chemical element of interest in the material to be analysed based on data provided by the alpha particle detector (13), the gamma ray detector (14) and the Compton cameras (15).

Determining a property of a layer of an integrated circuit (IC), the layer being formed over an underlayer, is implemented by performing the steps of: irradiating the IC to thereby eject electrons from the IC; collecting electrons emitted from the IC and determining the kinetic energy of the emitted electrons to thereby calculate emission intensity of electrons emitted from the layer and electrons emitted from the underlayer calculating a ratio of the emission intensity of electrons emitted from the layer and electrons emitted from the underlayer; and using the ratio to determine material composition or thickness of the layer. The steps of irradiating IC and collecting electrons may be performed using x-ray photoelectron spectroscopy (XPS) or x-ray fluorescence spectroscopy (XRF).